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Title: Methods for top-down fabrication of wafer scale TMDC monolayers

Abstract

A method of forming a TMDC monolayer comprises providing a multi-layer transition metal dichalcogenide (TMDC) film. The multi-layer TMDC film comprises a plurality of layers of the TMDC. The multi-layer TMDC film is positioned on a conducting substrate. The conducting substrate is contacted with an electrolyte solution. A predetermined electrode potential is applied on the conducting substrate and the TMDC monolayer for a predetermined time. A portion of the plurality of layers of the TMDC included in the multi-layer TMDC film is removed by application of the predetermined electrode potential, thereby leaving a TMDC monolayer film positioned on the conducting substrate.

Inventors:
; ; ;
Issue Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1407949
Patent Number(s):
9809903
Application Number:
15/061,696
Assignee:
UChicago Argonne, LLC
Patent Classifications (CPCs):
C - CHEMISTRY C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES C25F - PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Mar 04
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Das, Saptarshi, Bera, Mrinal K., Roelofs, Andreas K, and Antonio, Mark. Methods for top-down fabrication of wafer scale TMDC monolayers. United States: N. p., 2017. Web.
Das, Saptarshi, Bera, Mrinal K., Roelofs, Andreas K, & Antonio, Mark. Methods for top-down fabrication of wafer scale TMDC monolayers. United States.
Das, Saptarshi, Bera, Mrinal K., Roelofs, Andreas K, and Antonio, Mark. Tue . "Methods for top-down fabrication of wafer scale TMDC monolayers". United States. https://www.osti.gov/servlets/purl/1407949.
@article{osti_1407949,
title = {Methods for top-down fabrication of wafer scale TMDC monolayers},
author = {Das, Saptarshi and Bera, Mrinal K. and Roelofs, Andreas K and Antonio, Mark},
abstractNote = {A method of forming a TMDC monolayer comprises providing a multi-layer transition metal dichalcogenide (TMDC) film. The multi-layer TMDC film comprises a plurality of layers of the TMDC. The multi-layer TMDC film is positioned on a conducting substrate. The conducting substrate is contacted with an electrolyte solution. A predetermined electrode potential is applied on the conducting substrate and the TMDC monolayer for a predetermined time. A portion of the plurality of layers of the TMDC included in the multi-layer TMDC film is removed by application of the predetermined electrode potential, thereby leaving a TMDC monolayer film positioned on the conducting substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 07 00:00:00 EST 2017},
month = {Tue Nov 07 00:00:00 EST 2017}
}

Works referenced in this record:

Process to Produce Atomically Thin Crystals and Films
patent-application, November 2013


Novel Growth Methods For Controlled Large-Area Fabrication Of High-Quality Graphene Analogs
patent-application, September 2014


Novel Process For Scalable Synthesis Of Molybdenum Disulfide Monolayer And Few-Layer Films
patent-application, December 2014


Scalable 2D-Film CVD Synthesis
patent-application, May 2015


Spontaneous exfoliation and tailoring of MoS2 in mixed solvents
journal, January 2014