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Title: Fabrication of thin-film electronic devices with non-destructive wafer reuse

Abstract

Thin-film electronic devices such as LED devices and field effect transistor devices are fabricated using a non-destructive epitaxial lift-off technique that allows indefinite reuse of a growth substrate. The method includes providing an epitaxial protective layer on the growth substrate and a sacrificial release layer between the protective layer and an active device layer. After the device layer is released from the growth substrate, the protective layer is selectively etched to provide a newly exposed surface suitable for epitaxial growth of another device layer. The entire thickness of the growth substrate is preserved, enabling continued reuse. Inorganic thin-film device layers can be transferred to a flexible secondary substrate, enabling formation of curved inorganic optoelectronic devices.

Inventors:
;
Issue Date:
Research Org.:
Univ. of Michigan, Ann Arbor, MI (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1805682
Patent Number(s):
10964732
Application Number:
16/703,562
Assignee:
The Regents of the University of Michigan (Ann Arbor, MI)
DOE Contract Number:  
SC0001013
Resource Type:
Patent
Resource Relation:
Patent File Date: 12/04/2019
Country of Publication:
United States
Language:
English

Citation Formats

Forrest, Stephen R., and Lee, Kyusang. Fabrication of thin-film electronic devices with non-destructive wafer reuse. United States: N. p., 2021. Web.
Forrest, Stephen R., & Lee, Kyusang. Fabrication of thin-film electronic devices with non-destructive wafer reuse. United States.
Forrest, Stephen R., and Lee, Kyusang. Tue . "Fabrication of thin-film electronic devices with non-destructive wafer reuse". United States. https://www.osti.gov/servlets/purl/1805682.
@article{osti_1805682,
title = {Fabrication of thin-film electronic devices with non-destructive wafer reuse},
author = {Forrest, Stephen R. and Lee, Kyusang},
abstractNote = {Thin-film electronic devices such as LED devices and field effect transistor devices are fabricated using a non-destructive epitaxial lift-off technique that allows indefinite reuse of a growth substrate. The method includes providing an epitaxial protective layer on the growth substrate and a sacrificial release layer between the protective layer and an active device layer. After the device layer is released from the growth substrate, the protective layer is selectively etched to provide a newly exposed surface suitable for epitaxial growth of another device layer. The entire thickness of the growth substrate is preserved, enabling continued reuse. Inorganic thin-film device layers can be transferred to a flexible secondary substrate, enabling formation of curved inorganic optoelectronic devices.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2021},
month = {3}
}

Works referenced in this record:

Method for reclaiming delaminated wafer and reclaimed delaminated wafer
patent, April 2004


Methods for recycling substrates and fabricating laminated wafers
patent, December 2012


Single crystal silicon arrayed devices for display panels
patent, August 1995