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Title: Fabrication of thin-film electronic devices with non-destructive wafer reuse

Abstract

Thin-film electronic devices such as LED devices and field effect transistor devices are fabricated using a non-destructive epitaxial lift-off technique that allows indefinite reuse of a growth substrate. The method includes providing an epitaxial protective layer on the growth substrate and a sacrificial release layer between the protective layer and an active device layer. After the device layer is released from the growth substrate, the protective layer is selectively etched to provide a newly exposed surface suitable for epitaxial growth of another device layer. The entire thickness of the growth substrate is preserved, enabling continued reuse. Inorganic thin-film device layers can be transferred to a flexible secondary substrate, enabling formation of curved inorganic optoelectronic devices.

Inventors:
;
Issue Date:
Research Org.:
Univ. of Michigan, Ann Arbor, MI (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1632442
Patent Number(s):
10535685
Application Number:
15/101,287
Assignee:
The Regents of the University of Michigan (Ann Arbor, MI)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
SC0001013
Resource Type:
Patent
Resource Relation:
Patent File Date: 12/02/2014
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Forrest, Stephen R., and Lee, Kyusang. Fabrication of thin-film electronic devices with non-destructive wafer reuse. United States: N. p., 2020. Web.
Forrest, Stephen R., & Lee, Kyusang. Fabrication of thin-film electronic devices with non-destructive wafer reuse. United States.
Forrest, Stephen R., and Lee, Kyusang. Tue . "Fabrication of thin-film electronic devices with non-destructive wafer reuse". United States. https://www.osti.gov/servlets/purl/1632442.
@article{osti_1632442,
title = {Fabrication of thin-film electronic devices with non-destructive wafer reuse},
author = {Forrest, Stephen R. and Lee, Kyusang},
abstractNote = {Thin-film electronic devices such as LED devices and field effect transistor devices are fabricated using a non-destructive epitaxial lift-off technique that allows indefinite reuse of a growth substrate. The method includes providing an epitaxial protective layer on the growth substrate and a sacrificial release layer between the protective layer and an active device layer. After the device layer is released from the growth substrate, the protective layer is selectively etched to provide a newly exposed surface suitable for epitaxial growth of another device layer. The entire thickness of the growth substrate is preserved, enabling continued reuse. Inorganic thin-film device layers can be transferred to a flexible secondary substrate, enabling formation of curved inorganic optoelectronic devices.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {1}
}

Works referenced in this record:

Laser lift-off technique and the re-utilization of GaN-based LED films grown on sapphire substrate
journal, September 2008


Relaxation and Transfer of Stranded Material Layers
patent-application, December 2011


Materials for stretchable electronics
journal, March 2012


Digital cameras with designs inspired by the arthropod eye
journal, May 2013


Method for reclaiming delaminated wafer and reclaimed delaminated wafer
patent, April 2004


Package-Integrated Thin Film LED
patent-application, November 2013


Multiple growths of epitaxial lift-off solar cells from a single InP substrate
journal, September 2010


Release Strategies for Making Transferable Semiconductor Structures, Devices and Device Components
patent-application, July 2011


Study of GaAs(001) Surfaces Treated in Aqueous HCl Solutions
journal, December 1997


Demonstration of Multiple Substrate Reuses for Inverted Metamorphic Solar Cells
journal, April 2013


Kerf-Less Removal of Si, Ge, and III–V Layers by Controlled Spalling to Enable Low-Cost PV Technologies
journal, April 2012


High-efficiency thin-film InGaP/InGaAs/Ge tandem solar cells enabled by controlled spalling technology
journal, January 2012


High efficiency GaAs thin film solar cells by peeled film technology
journal, December 1978


Method for Manufacturing Semiconductor Light Emitting Device
patent-application, November 2013


Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics
journal, March 2013


Method of Manufacturing a Semiconductor Structure
patent-application, June 2012


Separation of Thin GaN from Sapphire by Laser Lift-Off Technique
journal, April 2011


Method for Controlling plasma Processing Apparatus
patent-application,  


Wafer reuse for repeated growth of III-V solar cells
journal, May 2010


Stretchable, Transparent Graphene Interconnects for Arrays of Microscale Inorganic Light Emitting Diodes on Rubber Substrates
journal, September 2011


Methods for recycling substrates and fabricating laminated wafers
patent, December 2012


Reuse of GaAs substrates for epitaxial lift-off by employing protection layers
journal, February 2012


Method of Recycling an Epitaxied Donor Wafer
patent-application, April 2007


Method for Recycling Wafer
patent-application, April 2012


Macroscopic electronic behavior and atomic arrangements of GaAs surfaces immersed in HCl solution
journal, July 1994

  • Ishikawa, Y.; Ishii, H.; Hasegawa, H.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, Vol. 12, Issue 4
  • https://doi.org/10.1116/1.587237

GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies
journal, May 2010