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Title: Fabrication of thin-film electronic devices with non-destructive wafer reuse

Abstract

Thin-film electronic devices such as LED devices and field effect transistor devices are fabricated using a non-destructive epitaxial lift-off technique that allows indefinite reuse of a growth substrate. The method includes providing an epitaxial protective layer on the growth substrate and a sacrificial release layer between the protective layer and an active device layer. After the device layer is released from the growth substrate, the protective layer is selectively etched to provide a newly exposed surface suitable for epitaxial growth of another device layer. The entire thickness of the growth substrate is preserved, enabling continued reuse. Inorganic thin-film device layers can be transferred to a flexible secondary substrate, enabling formation of curved inorganic optoelectronic devices.

Inventors:
;
Issue Date:
Research Org.:
Univ. of Michigan, Ann Arbor, MI (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1632442
Patent Number(s):
10535685
Application Number:
15/101,287
Assignee:
The Regents of the University of Michigan (Ann Arbor, MI)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
SC0001013
Resource Type:
Patent
Resource Relation:
Patent File Date: 12/02/2014
Country of Publication:
United States
Language:
English

Citation Formats

Forrest, Stephen R., and Lee, Kyusang. Fabrication of thin-film electronic devices with non-destructive wafer reuse. United States: N. p., 2020. Web.
Forrest, Stephen R., & Lee, Kyusang. Fabrication of thin-film electronic devices with non-destructive wafer reuse. United States.
Forrest, Stephen R., and Lee, Kyusang. Tue . "Fabrication of thin-film electronic devices with non-destructive wafer reuse". United States. https://www.osti.gov/servlets/purl/1632442.
@article{osti_1632442,
title = {Fabrication of thin-film electronic devices with non-destructive wafer reuse},
author = {Forrest, Stephen R. and Lee, Kyusang},
abstractNote = {Thin-film electronic devices such as LED devices and field effect transistor devices are fabricated using a non-destructive epitaxial lift-off technique that allows indefinite reuse of a growth substrate. The method includes providing an epitaxial protective layer on the growth substrate and a sacrificial release layer between the protective layer and an active device layer. After the device layer is released from the growth substrate, the protective layer is selectively etched to provide a newly exposed surface suitable for epitaxial growth of another device layer. The entire thickness of the growth substrate is preserved, enabling continued reuse. Inorganic thin-film device layers can be transferred to a flexible secondary substrate, enabling formation of curved inorganic optoelectronic devices.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {1}
}

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Works referenced in this record:

Method for reclaiming delaminated wafer and reclaimed delaminated wafer
patent, April 2004


Methods for recycling substrates and fabricating laminated wafers
patent, December 2012