Fabrication of thin-film electronic devices with non-destructive wafer reuse

Forrest, Stephen R.; Lee, Kyusang

Title: Fabrication of thin-film electronic devices with non-destructive wafer reuse

Patent · Tue Jan 14 00:00:00 EST 2020

OSTI ID:1632442

Forrest, Stephen R.; Lee, Kyusang

Thin-film electronic devices such as LED devices and field effect transistor devices are fabricated using a non-destructive epitaxial lift-off technique that allows indefinite reuse of a growth substrate. The method includes providing an epitaxial protective layer on the growth substrate and a sacrificial release layer between the protective layer and an active device layer. After the device layer is released from the growth substrate, the protective layer is selectively etched to provide a newly exposed surface suitable for epitaxial growth of another device layer. The entire thickness of the growth substrate is preserved, enabling continued reuse. Inorganic thin-film device layers can be transferred to a flexible secondary substrate, enabling formation of curved inorganic optoelectronic devices.

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Research Organization:: Univ. of Michigan, Ann Arbor, MI (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: SC0001013

Assignee:: The Regents of the University of Michigan (Ann Arbor, MI)

Patent Number(s):: 10,535,685

Application Number:: 15/101,287

OSTI ID:: 1632442

Resource Relation:: Patent File Date: 12/02/2014

Country of Publication:: United States

Language:: English

References (32)

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