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Title: Method for large-scale fabrication of atomic-scale structures on material surfaces using surface vacancies

Abstract

A method for forming atomic-scale structures on a surface of a substrate on a large-scale includes creating a predetermined amount of surface vacancies on the surface of the substrate by removing an amount of atoms on the surface of the material corresponding to the predetermined amount of the surface vacancies. Once the surface vacancies have been created, atoms of a desired structure material are deposited on the surface of the substrate to enable the surface vacancies and the atoms of the structure material to interact. The interaction causes the atoms of the structure material to form the atomic-scale structures.

Inventors:
 [1];  [1];  [2];  [2]
  1. Urbana, IL
  2. Champaign, IL
Issue Date:
Research Org.:
University of Ilinois
OSTI Identifier:
879768
Patent Number(s):
6762131
Application Number:
10/123031
Assignee:
The Board of Trustees of the University of Illinois (Urbana, IL)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
FG02-91ER45439
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Lim, Chong Wee, Ohmori, Kenji, Petrov, Ivan Georgiev, and Greene, Joseph E. Method for large-scale fabrication of atomic-scale structures on material surfaces using surface vacancies. United States: N. p., 2004. Web.
Lim, Chong Wee, Ohmori, Kenji, Petrov, Ivan Georgiev, & Greene, Joseph E. Method for large-scale fabrication of atomic-scale structures on material surfaces using surface vacancies. United States.
Lim, Chong Wee, Ohmori, Kenji, Petrov, Ivan Georgiev, and Greene, Joseph E. Tue . "Method for large-scale fabrication of atomic-scale structures on material surfaces using surface vacancies". United States. https://www.osti.gov/servlets/purl/879768.
@article{osti_879768,
title = {Method for large-scale fabrication of atomic-scale structures on material surfaces using surface vacancies},
author = {Lim, Chong Wee and Ohmori, Kenji and Petrov, Ivan Georgiev and Greene, Joseph E},
abstractNote = {A method for forming atomic-scale structures on a surface of a substrate on a large-scale includes creating a predetermined amount of surface vacancies on the surface of the substrate by removing an amount of atoms on the surface of the material corresponding to the predetermined amount of the surface vacancies. Once the surface vacancies have been created, atoms of a desired structure material are deposited on the surface of the substrate to enable the surface vacancies and the atoms of the structure material to interact. The interaction causes the atoms of the structure material to form the atomic-scale structures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2004},
month = {7}
}

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