Low defect nuclear transmutation doping in nitride-based semiconductor materials
Abstract
Doped nitride-based semiconductor materials and methods of producing these materials are described herein.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of Missouri, Columbia, MO (United States)
- Sponsoring Org.:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- OSTI Identifier:
- 1986869
- Patent Number(s):
- 11515161
- Application Number:
- 16/852,186
- Assignee:
- The Curators of the University of Missouri (Columbia, MO)
- DOE Contract Number:
- AR0000874
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 04/17/2020
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Kwon, Jae Wan, Gahl, John, and Brockman, John. Low defect nuclear transmutation doping in nitride-based semiconductor materials. United States: N. p., 2022.
Web.
Kwon, Jae Wan, Gahl, John, & Brockman, John. Low defect nuclear transmutation doping in nitride-based semiconductor materials. United States.
Kwon, Jae Wan, Gahl, John, and Brockman, John. Tue .
"Low defect nuclear transmutation doping in nitride-based semiconductor materials". United States. https://www.osti.gov/servlets/purl/1986869.
@article{osti_1986869,
title = {Low defect nuclear transmutation doping in nitride-based semiconductor materials},
author = {Kwon, Jae Wan and Gahl, John and Brockman, John},
abstractNote = {Doped nitride-based semiconductor materials and methods of producing these materials are described herein.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2022},
month = {11}
}
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