Title: Doped nanoparticle-based semiconductor junction

Abstract

A doped semiconductor junction for use in an electronic device and a method for making such junction is disclosed. The junction includes a first polycrystalline semiconductor layer doped with donors or acceptors over a substrate such that the first doped semiconductor layer has a first polarity, the first layer including fused semiconductor nanoparticles; and a second layer in contact with the first semiconductor layer over a substrate to form the semiconductor junction.

Inventors:

Kahen, Keith B.

Issue Date:

2009-10-20

Research Org.:

Eastman Kodak Company, Rochester, NY (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1531828

Patent Number(s):

7605062

Application Number:

11/678,734

Assignee:

Eastman Kodak Company (Rochester, NY)

Patent Classifications (CPCs):

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
B82Y30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02381 - {Silicon, silicon germanium, germanium}
H01L21/02524 - {Group 14 semiconducting materials}
H01L21/02538 - {Group 13/15 materials}
H01L21/02551 - {Group 12/16 materials}
H01L21/0256 - {Selenides}
H01L21/02562 - {Tellurides}
H01L21/02568 - {Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}
H01L21/02576 - {N-type}
H01L21/02579 - {P-type}
H01L21/02581 - {Transition metal or rare earth elements}
H01L21/02601 - {Nanoparticles
H01L21/02628 - {using solutions}
H01L29/0665 - {the shape of the body defining a nanostructure
H01L29/0673 - {oriented parallel to a substrate}
H01L29/861 - Diodes
H01L29/868 - PIN diodes
H01L33/18 - within the light emitting region

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S977/892 - Liquid phase deposition

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DOE Contract Number:  

FC26-06NT42864

Resource Type:

Patent

Resource Relation:

Patent File Date: 2007-02-26

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY