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Title: Doping-assisted defect control in compound semiconductors

Abstract

The present invention relates to the production of thin film epilayers of III–V and other compounds with acceptor doping wherein the acceptor thermally stabilizes the epilayer, stabilize the naturally incorporated native defect population and therewith maintain the epilayer's beneficial properties upon annealing among other advantageous effects. In particular, balanced doping in which the acceptor concentration is similar to (but does not exceed) the antisite defects in the as-grown material is shown to be particularly advantageous in providing thermal stability, high resistivity and ultrashort trapping times. In particular, MBE growth of LT-GaAs epilayers with balanced Be doping is described in detail. The growth conditions greatly enhance the materials reproducibility (that is, the yield in processed devices). Such growth techniques can be transferred to other III–V materials if the growth conditions are accurately reproduced. Materials produced herein also demonstrate advantages in reproducibility, reliability and radiation hardening.

Inventors:
; ;
Issue Date:
Research Org.:
Univ. of California, Oakland, CA (United States); The United States of America as represented by the Secretary of the Navy, Washington, DC (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1175828
Patent Number(s):
7074697
Application Number:
10/706,610
Assignee:
The Regents of the University of California (Oakland, CA); The United States of America as represented by the Secretary of the Navy (Washington, DC)
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Specht, Petra, Weber, Eicke R., and Weatherford, Todd Russell. Doping-assisted defect control in compound semiconductors. United States: N. p., 2006. Web.
Specht, Petra, Weber, Eicke R., & Weatherford, Todd Russell. Doping-assisted defect control in compound semiconductors. United States.
Specht, Petra, Weber, Eicke R., and Weatherford, Todd Russell. Tue . "Doping-assisted defect control in compound semiconductors". United States. https://www.osti.gov/servlets/purl/1175828.
@article{osti_1175828,
title = {Doping-assisted defect control in compound semiconductors},
author = {Specht, Petra and Weber, Eicke R. and Weatherford, Todd Russell},
abstractNote = {The present invention relates to the production of thin film epilayers of III–V and other compounds with acceptor doping wherein the acceptor thermally stabilizes the epilayer, stabilize the naturally incorporated native defect population and therewith maintain the epilayer's beneficial properties upon annealing among other advantageous effects. In particular, balanced doping in which the acceptor concentration is similar to (but does not exceed) the antisite defects in the as-grown material is shown to be particularly advantageous in providing thermal stability, high resistivity and ultrashort trapping times. In particular, MBE growth of LT-GaAs epilayers with balanced Be doping is described in detail. The growth conditions greatly enhance the materials reproducibility (that is, the yield in processed devices). Such growth techniques can be transferred to other III–V materials if the growth conditions are accurately reproduced. Materials produced herein also demonstrate advantages in reproducibility, reliability and radiation hardening.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2006},
month = {7}
}

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Works referenced in this record:

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