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Title: Photonuclear transmutation doping in gallium-based semiconductor materials

Patent ·
OSTI ID:1987020
;

The present invention relates to various high quality n-type and p-type doped gallium-based semiconductor materials, electronic components incorporating these materials, and processes of producing these materials. In particular, The present invention relates processes to achieve high quality, uniform doping of a whole wafer or a thin layer of gallium-based semiconductor materials for various applications such as a vertical power transistor or diode.

Research Organization:
Univ. of Missouri, Columbia, MO (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AR0000874
Assignee:
The Curators of the University of Missouri (Columbia, MO)
Patent Number(s):
11,551,932
Application Number:
16/905,506
OSTI ID:
1987020
Resource Relation:
Patent File Date: 06/18/2020
Country of Publication:
United States
Language:
English

References (12)

Method of producing homogeneously doped p-conductive semiconductor materials patent May 1977
Photonuclear transmutation doping of semiconductors journal April 1988
Shedding light on doping of gallium nitride journal July 2012
Methods for Wafer Bonding, and for Nucleating Bonding Nanophases patent-application August 2015
Photonuclear Reaction Cross Sections for Gallium Isotopes journal April 2015
Neutron transmutation doping effects in GaN
  • Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 28, Issue 3 https://doi.org/10.1116/1.3431083
journal May 2010
Local penetrating proton beam transmutation doping method for silicon patent September 2000
NUBA Conference Series 1: Nuclear Physics and Astrophysics journal April 2015
Neutron transmutation doping of a silicon wafer patent March 1990
III-V Field Effect Transistor on a Dielectric Layer patent-application June 2017
Lattice distortions and the transmuted-Ge related luminescence in neutron-transmutation-doped GaN journal May 2002
Method for Doping Gallium Nitride (GaN) Substrates and the Resulting Doped GaN Substrate patent-application July 2003

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