High Quality Doping of GaN Through Transmutation Processing

Technical Report · Wed Nov 22 04:00:00 EST 2023

DOI:https://doi.org/10.2172/2283964· OSTI ID:2283964

Kwon, Jaewon W. ^[1]

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1. Univ. of Missouri, Columbia, MO (United States); The Curators of the University of Missouri

This project led to several outstanding achievements: - Computational modeling of nuclear reactions, including estimates of the production ratio and doping concentration using TALYS 1.96 based on nuclear reactions in GaN induced by gamma-ray and protons. For photonuclear transmutation doping, simulations proved that Zn/Ge ratio with 40 MeV is higher than the other energies. - Proton transmutation doping was shown to be a potential nuclear source to fabricate p-type gallium-based semiconductor materials, examined during new irradiations with Oak Ridge National Laboratory and Brookhaven National Laboratory (in 200 MeV H^-–Linac). - Patent disclosure to the University of Missouri-Columbia about healing effects in GaN by radiations. - Zn-doped p-type GaN through photonuclear transmutation doping process. - The PIs made an oral presentation on the p-type characteristics of Zn-doped GaN at the Materials Research Society Fall meeting in Boston. - The last irradiation process was in progress in collaboration with Argonne National Laboratory.

• Research Organization: Univ. of Missouri, Columbia, MO (United States)
• Sponsoring Organization: USDOE Advanced Research Projects Agency - Energy (ARPA-E)
• DOE Contract Number: AR0000874
• OSTI ID: 2283964
• Report Number(s): DOE-MU--0874
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE