As the potential applications of GaN and Ga2O3 are limited by the inadequacy of conventional doping techniques, specifically when uniform selective area p-type doping is required, the potential for transmutation doping of these materials is analyzed. All transmuted element concentrations are reported as a function of time for several common proton and neutron radiation sources, showing that previously published results considered a small subset of the dopants produced. A 40 MeV proton accelerator is identified as the most effective transmutation doping source considered, with a 2.25 × 1017 protons per cm2 fluence yielding net concentrations of uncompensated p-type dopants of 7.7 × 1015 and 8.1 × 1015 cm-3 for GaN and Ga2O3, respectively. Furthermore, it is shown that high energy proton accelerator spectra are capable of producing dopants required for magnetic and neutron detection applications, although not of the concentrations required for current applications using available irradiation methods.
Logan, Julie V., et al. "Potential for neutron and proton transmutation doping of GaN and Ga<sub>2</sub>O<sub>3</sub>." Materials Advances, vol. 1, no. 1, Feb. 2020. https://doi.org/10.1039/D0MA00017E
Logan, Julie V., Frantz, Elias B., Casias, Lilian K., Short, Michael P., Morath, Christian P., & Webster, Preston T. (2020). Potential for neutron and proton transmutation doping of GaN and Ga<sub>2</sub>O<sub>3</sub>. Materials Advances, 1(1). https://doi.org/10.1039/D0MA00017E
Logan, Julie V., Frantz, Elias B., Casias, Lilian K., et al., "Potential for neutron and proton transmutation doping of GaN and Ga<sub>2</sub>O<sub>3</sub>," Materials Advances 1, no. 1 (2020), https://doi.org/10.1039/D0MA00017E
@article{osti_1605727,
author = {Logan, Julie V. and Frantz, Elias B. and Casias, Lilian K. and Short, Michael P. and Morath, Christian P. and Webster, Preston T.},
title = {Potential for neutron and proton transmutation doping of GaN and Ga<sub>2</sub>O<sub>3</sub>},
annote = {As the potential applications of GaN and Ga2O3 are limited by the inadequacy of conventional doping techniques, specifically when uniform selective area p-type doping is required, the potential for transmutation doping of these materials is analyzed. All transmuted element concentrations are reported as a function of time for several common proton and neutron radiation sources, showing that previously published results considered a small subset of the dopants produced. A 40 MeV proton accelerator is identified as the most effective transmutation doping source considered, with a 2.25 × 1017 protons per cm2 fluence yielding net concentrations of uncompensated p-type dopants of 7.7 × 1015 and 8.1 × 1015 cm-3 for GaN and Ga2O3, respectively. Furthermore, it is shown that high energy proton accelerator spectra are capable of producing dopants required for magnetic and neutron detection applications, although not of the concentrations required for current applications using available irradiation methods.},
doi = {10.1039/D0MA00017E},
url = {https://www.osti.gov/biblio/1605727},
journal = {Materials Advances},
issn = {ISSN 2633-5409},
number = {1},
volume = {1},
place = {United States},
publisher = {Royal Society of Chemistry},
year = {2020},
month = {02}}
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 500, Issue 1-3, p. 272-308https://doi.org/10.1016/S0168-9002(02)02078-8