Neutron transmutation doping of polycrystalline silicon
Chemical vapor deposition (CVD) of doped silane has been used by others to deposit a polycrytalline silicon film (polysil) on metal or graphite substrates, but dopant migration to grain boundaries during deposition apparently prohibits attaining a uniform or desired dopant concentration. In contrast, we have used neutron transmutation doping to introduce a uniform phosphorus dopant concentration in commercially available undoped CVD polysil at doping concentrations greater than or equal to 2 x 10/sup 15/ cm/sup -3/. Radiation damage annealing to 800/sup 0/C did not indicate dopant migration. Carrier mobility increased with doping concentration and the minority carrier lifetime (MCL) appears to be comparable to that of neutron transmutation doped (NTD) single crystal Si. Application of this technique to photovoltaic solar cell fabrication is discussed.
- Research Organization:
- Oak Ridge National Lab., Tenn. (USA)
- OSTI ID:
- 7363810
- Report Number(s):
- CONF-760529-1
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360104 -- Metals & Alloys-- Physical Properties
BARYONS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL DOPING
CRYSTAL STRUCTURE
DEPOSITION
DIRECT ENERGY CONVERTERS
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
GRAIN BOUNDARIES
HADRONS
MICROSTRUCTURE
NEUTRONS
NUCLEONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SURFACE COATING