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Characterization and applications of neutron-transmutation-doped germanium

Thesis/Dissertation ·
OSTI ID:7072857

Thermal-neutron irradiation of germanium leads to gallium acceptors, arsenic and selenium donors, as well as radiation defects. Unlike other neutron-transmutation-doped (NTD) semiconductors in which only donor impurities are introduced, NTD germanium contains both types of dopant impurities in the ratio of acceptor:donor = 3:1. Radiation defects and the evolution of each impurity as a function of time in NTD germanium were investigated by Hall-effect measurements and infrared absorption spectroscopy. The presence of radiation defects in an unannealed NTD germanium sample was clearly shown by measuring the net carrier concentration of annealed and unannealed samples as a function of time after neutron irradiation. Most of the radiation defects were removed by annealing above 400{degree}C for 1 hr. Using IR spectroscopy with band-edge light illumination, it was shown that transmutation-produced gallium acceptors were electrically active without annealing after NTD, while arsenic donors were not. Further evidence showed that group V donors in irradiated germanium formed complexes with vacancies. These complexes were formed between substitutional donors and vacancies as shown by IR spectroscopy on neutron-irradiated, phosphorus-doped germanium. It was concluded that vacancies diffuse to the substitutional donor sites to form complexes.

Research Organization:
California Univ., Berkeley, CA (USA)
OSTI ID:
7072857
Country of Publication:
United States
Language:
English