Ultrashallow acceptors in neutron-transmutation-doped silicon

Journal Article · Mon Jul 15 00:00:00 EDT 1991 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.44.1565· OSTI ID:5469167

Udo, M K; LaBrec, C R; Ramdas, A K ^[1]

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1. Department of Physics, Purdue University, West Lafayette, Indiana 47907 (US)

An additional series of excitation lines occurs in Si(B) subjected to slow-neutron irradiation and a partial high-temperature anneal. The neutron irradiation produces P by the transmutation of {sup 30}Si and radiation damage due to the transmutation process itself as well as the unavoidable fast-neutron component of the neutron flux. The spacings and the relative intensities of the lines in the spectrum are strikingly similar to the excitation spectrum of boron acceptors in Si but with lower energies. This series corresponds to an acceptor (referred to as B{sub NTD}, where NTD denotes neutron-transmutation doping) with a binding energy {ital E}{sub {ital I}}(B{sub NTD})=28.24 meV, significantly lower than {ital E}{sub {ital I}}(B)=45.70 meV. The concentration of these ultrashallow acceptor centers increases with annealing in the temperature range 550--675 {degree}C; at higher temperatures, these centers are annealed out. On the basis of piezospectroscopy, a tetrahedral ({ital T}{sub {ital d}}) site symmetry is deduced for these centers and the deformation-potential constants of the ground state are determined. It appears that these acceptor centers are boron impurities in substitutional sites in association with defects. We have also discovered the analogous ultrashallow acceptors in which Al rather than B are involved.

• OSTI ID: 5469167
• Journal Information: Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 44:4; ISSN PRBMD; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
BARYONS
BORON
DAMAGE
DOPED MATERIALS
ELECTROMAGNETIC RADIATION
ELEMENTARY PARTICLES
ELEMENTS
FAR INFRARED RADIATION
FERMIONS
HADRONS
HEAT TREATMENTS
INFRARED RADIATION
INFRARED SPECTRA
IRRADIATION
MATERIALS
NEUTRONS
NONMETALS
NUCLEONS
PHOSPHORUS
RADIATION EFFECTS
RADIATIONS
SEMIMETALS
SILICON
SPECTRA
TRANSMUTATION
ULTRALOW TEMPERATURE