Very shallow acceptors in neutron transmutation doped silicon

Journal Article · Mon May 02 04:00:00 EDT 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99113· OSTI ID:5417664

LaBrec, C R; Udo, M K; Ramdas, A K

We report the far-infrared absorption spectra of very shallow acceptor centers in silicon consisting of boron (aluminum) introduced during growth complexed with defect centers produced during neutron transmutation doping followed by a partial high-temperature anneal. As annealing of the samples removes radiation damage and activates isolated boron (aluminum) centers, a new acceptor series, attributed to this acceptor complex, is observed with a ground-state binding energy significantly lower than that of the known impurity.

• Research Organization: Department of Physics, Purdue University, West Lafayette, Indiana 47907
• OSTI ID: 5417664
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 52:18; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ABSORPTION SPECTRA
ALUMINIUM
ANNEALING
BARYONS
BORON
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DAMAGE
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
HADRONS
HEAT TREATMENTS
IMPURITIES
INFRARED SPECTRA
METALS
NEUTRONS
NUCLEONS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMIMETALS
SILICON
SPECTRA
TRANSMUTATION