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Electrical property studies of neutron-transmutation-doped silicon

Conference ·
OSTI ID:6405541
; ; ; ;
Results of studies of electrical properties of neutron-transmutation-doped (NTD) silicon are presented. Annealing requirements to remove lattice damage were obtained. The electrical role of clustered oxygen and defect-oxygen complex was investigated. An NTD epitaxial layer on a heavily doped n- or p- type substrate can be produced. There is no evident interaction between lithium introduced by diffusion and phosphorous 31 introduced by irradiation. There may be some type of pairing reaction between lithium 7 introduced by boron 10 fission and any remaining boron. (FS)
Research Organization:
Oak Ridge National Lab., TN (USA)
DOE Contract Number:
W-7405-ENG-26
OSTI ID:
6405541
Report Number(s):
CONF-7804114-1
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
360104 -- Metals & Alloys-- Physical Properties
360105* -- Metals & Alloys-- Corrosion & Erosion
440101 -- Radiation Instrumentation-- General Detectors or Monitors & Radiometric Instruments
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALKALI METAL ISOTOPES
ANNEALING
BORON 10
BORON ISOTOPES
BSR-2 REACTOR
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
CZOCHRALSKI METHOD
DIFFUSION
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELEMENTS
ENRICHED URANIUM REACTORS
HEAT TREATMENTS
IRRADIATION
ISOTOPES
LATTICE PARAMETERS
LI-DRIFTED DETECTORS
LI-DRIFTED SI DETECTORS
LIGHT NUCLEI
LITHIUM 7
LITHIUM ISOTOPES
MEASURING INSTRUMENTS
NUCLEI
ODD-EVEN NUCLEI
ODD-ODD NUCLEI
PHOSPHORUS 31
PHOSPHORUS ISOTOPES
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
POOL TYPE REACTORS
RADIATION DETECTORS
RADIATION EFFECTS
REACTORS
RESEARCH AND TEST REACTORS
RESEARCH REACTORS
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SI SEMICONDUCTOR DETECTORS
SILICON
STABLE ISOTOPES
THERMAL REACTORS
TRANSMUTATION
WATER COOLED REACTORS
WATER MODERATED REACTORS