Radiation damage in neutron transmutation doped silicon: Electrical property studies

Journal Article · Fri Sep 01 00:00:00 EDT 1978 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.325548· OSTI ID:6761177

Young, R T; Cleland, J W; Wood, R F; Abraham, M M

Radiation damage in neutron-transmutation-doped (NTD) silicon, irradiated to introduce 5 x 10/sup 13/ to 6 x 10/sup 16/ phosphorus cm/sup -3/, has been studied by electrical property measurements. The experimental results indicate that thermal-neutron-induced (n,..gamma..) recoil-type damage can be annealed at 400 /sup 0/C. The nature of any remaining lattice defects and their annealing behavior above 400 /sup 0/C is a function of the fast-neutron fluence. Small defect clusters are present in Si irradiated with a light-to-moderate fast-neutron fluence (< or =5 x 10/sup 18/ n cm/sup -2/), and temperature-dependent Hall coefficient measurements indicate that at least two deep acceptor levels and one deep donor level are formed during annealing. One of these acceptor levels anneals at approx.450 /sup 0/C, and the other two levels anneal at approx.550 /sup 0/C. A shallow acceptor level near the valence band that anneals at 750 /sup 0/C is also observed. Larger defect clusters which reduce the electron mobility tremendously and distort the band structure are formed in heavily irradiated Si (5 x 10/sup 18/ to 10/sup 20/ n cm/sup -2/). Virtually all of the electrically detectable radiation damage in NTD Si irradiated with a fast-neutron fluence up to 10/sup 20/ n cm/sup -2/ can be removed by annealing at 750 /sup 0/C for 1/2 h. There is some indication that a minority-carrier-recombination effect remains even after such annealing.

• Research Organization: Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
• OSTI ID: 6761177
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 49:9; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
BARYONS
BEAMS
CARRIER MOBILITY
CRYSTAL DEFECTS
CRYSTAL DOPING
CRYSTAL STRUCTURE
DOPED MATERIALS
ELEMENTARY PARTICLES
ELEMENTS
ENERGY LEVELS
FAST NEUTRONS
FERMIONS
HADRONS
HALL EFFECT
HEAT TREATMENTS
IRRADIATION
ISOTOPES
LIGHT NUCLEI
MOBILITY
NEUTRON BEAMS
NEUTRONS
NUCLEI
NUCLEON BEAMS
NUCLEONS
ODD-EVEN NUCLEI
PARTICLE BEAMS
PHOSPHORUS 31
PHOSPHORUS ISOTOPES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RECOILS
RECOMBINATION
SEMIMETALS
SILICON
STABLE ISOTOPES
THERMAL NEUTRONS
TRANSMUTATION