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Title: Electrical property studies of neutron-transmutation-doped silicon

Conference ·
OSTI ID:6405541

Results of studies of electrical properties of neutron-transmutation-doped (NTD) silicon are presented. Annealing requirements to remove lattice damage were obtained. The electrical role of clustered oxygen and defect-oxygen complex was investigated. An NTD epitaxial layer on a heavily doped n- or p- type substrate can be produced. There is no evident interaction between lithium introduced by diffusion and phosphorous 31 introduced by irradiation. There may be some type of pairing reaction between lithium 7 introduced by boron 10 fission and any remaining boron. (FS)

Research Organization:
Oak Ridge National Lab., TN (USA)
DOE Contract Number:
W-7405-ENG-26
OSTI ID:
6405541
Report Number(s):
CONF-7804114-1; TRN: 79-006946
Resource Relation:
Conference: 2. international conference on neutron transmutation doping of semi-conductors, Columbus, MO, USA, 23 Apr 1978
Country of Publication:
United States
Language:
English

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