Infrared absorption study of neutron-transmutation-doped germanium
Using high-resolution far-infrared Fourier transform absorption spectroscopy and Hall effect measurements we have studied the evolution of the shallow acceptor and donor impurity levels in germanium during and after the neutron transmutation doping process. Our results show unambiguously that the gallium acceptor level concentration equals the concentration of transmutated /sup 70/ Ge atoms during the whole process indicating that neither recoil during transmutation nor gallium-defect complex formation play significant roles. The arsenic donor levels appear at full concentration only after annealing for 1 h at 450 /sup 0/C. We show that this is due to donor-radiation-defect complex formation. Again recoil does not play a significant role.
- Research Organization:
- Department of Materials Science, University of California at Berkeley and Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
- OSTI ID:
- 6728588
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 64:12; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
ABSORPTION SPECTROSCOPY
ANNEALING
BARYONS
CRYSTAL DOPING
ELECTROMAGNETIC RADIATION
ELECTRONIC STRUCTURE
ELEMENTARY PARTICLES
ELEMENTS
EVEN-EVEN NUCLEI
FAR INFRARED RADIATION
FERMIONS
GERMANIUM
GERMANIUM 70
GERMANIUM ISOTOPES
HADRONS
HALL EFFECT
HEAT TREATMENTS
IMPURITIES
INFRARED RADIATION
INFRARED SPECTRA
INTERMEDIATE MASS NUCLEI
ISOTOPES
METALS
NEUTRONS
NUCLEI
NUCLEONS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SPECTRA
SPECTROSCOPY
STABLE ISOTOPES
TRANSMUTATION