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Infrared absorption study of neutron-transmutation-doped germanium

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.342011· OSTI ID:6728588

Using high-resolution far-infrared Fourier transform absorption spectroscopy and Hall effect measurements we have studied the evolution of the shallow acceptor and donor impurity levels in germanium during and after the neutron transmutation doping process. Our results show unambiguously that the gallium acceptor level concentration equals the concentration of transmutated /sup 70/ Ge atoms during the whole process indicating that neither recoil during transmutation nor gallium-defect complex formation play significant roles. The arsenic donor levels appear at full concentration only after annealing for 1 h at 450 /sup 0/C. We show that this is due to donor-radiation-defect complex formation. Again recoil does not play a significant role.

Research Organization:
Department of Materials Science, University of California at Berkeley and Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
OSTI ID:
6728588
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 64:12; ISSN JAPIA
Country of Publication:
United States
Language:
English