Selective thermal neutron transmutation doping with Gd masks in GaN semiconductors

Kim, Jeongwoo; Frontzek, Matthias D.; Crow. Jr., Lowell; Kwon, Jae W.

doi:10.1016/j.sse.2022.108510

Selective thermal neutron transmutation doping with Gd masks in GaN semiconductors

Journal Article · Tue Nov 01 00:00:00 EDT 2022 · Solid-State Electronics

DOI:https://doi.org/10.1016/j.sse.2022.108510· OSTI ID:1901613

Kim, Jeongwoo ^[1]; ^[2]; ^[2]; Kwon, Jae W. ^[3]

Univ. of Missouri, Columbia, MO (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Infinity Power, Columbia, MO (United States)

For the first time, selective neutron transmutation doping was successfully performed on GaN through Gd masks, showing the feasibility of patternable doping through neutron irradiations. In collaborating with Oak Ridge National Laboratory, GaN with Gd masks was irradiated by directional neutrons. By using the Gd properties with high neutron absorption cross-sections, it was confirmed that the area covered by Gd masks on GaN was completely shielded from neutrons, and the uncovered area was doped with the generated Ge and ¹⁴C. Property differences were clearly identified in various ways when comparing the area exposed by neutrons and the area unexposed by neutrons. The discoloration by the ejected protons and elastic scattering of neutrons appeared only in the exposed area while the unexposed area remained the same as before irradiation. The aspect ratio of the patterned profile of GaN was estimated by comparing patterns on the front and backside. From energy dispersive X-ray spectroscopy spectra and secondary ion mass spectrometry measurement, the concentration difference between Ge and ¹⁴C as well as the exact concentration of produced ¹⁴C was also checked. Further, Schottky barrier diodes on the selectively doped GaN were fabricated and investigated to study the electrical properties.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). High Flux Isotope Reactor (HFIR)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725; AR0000874

OSTI ID:: 1901613

Alternate ID(s):: OSTI ID: 1899190

Journal Information:: Solid-State Electronics, Journal Name: Solid-State Electronics Journal Issue: 1 Vol. 199; ISSN 0038-1101

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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