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Neutron-transmuted carbon-14 in neutron-irradiated GaN: Compensation of DX-like center

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4848288· OSTI ID:22261945
; ;  [1];  [2]; ;  [3]
  1. College of Engineering and Research Center of Ion Beam Technology, Hosei University Koganei, Tokyo 184-8584 (Japan)
  2. Departments of Arts and Sciences, Osaka Kyoiku University Kashiwara, Osaka 582-8582 (Japan)
  3. Research Reactor Institute, Kyoto University Kumatori, Osaka 590-0494 (Japan)
The transmuted-C related luminescence and net carrier concentration are studied by combining photoluminescence, liquid scintillation, and Raman scattering. GaN single crystal films grown by metalorganic-vapor-phase epitaxy are irradiated with fast and thermal neutrons at fluxes of 3.9 × 10{sup 13} cm{sup −2}s{sup −1} and 8.15 × 10{sup 13} cm{sup −2}s{sup −1}, respectively. Irradiation time is 48 hours. The calculated {sup 72}Ge and {sup 14}C concentrations are 1.24 × 10{sup 18} cm{sup −3} and 1.13 × 10{sup 18} cm{sup −3}, respectively. The transmuted {sup 14}C is detected by the liquid scintillation method to survey β-rays emitted in the process of {sup 14}C decays from {sup 14}N. Tritium ({sup 3}H) is also emitted by a (n,t) reaction of {sup 14}N due to the neutron irradiation above 4.5 MeV. Photoluminescence relating to C, DX-like center of Ge and yellow luminescence band are observed in 1000 °C annealed NTD-GaN. The free electron concentration estimated from Raman scattering is 4.97 × 10{sup 17} cm{sup −3}. This value is lower than that from the transmuted Ge concentration, suggesting the compensation due to the transmuted {sup 14}C acceptors.
OSTI ID:
22261945
Journal Information:
AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1566; ISSN APCPCS; ISSN 0094-243X
Country of Publication:
United States
Language:
English

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