LO-phonon and plasmon coupling in neutron-transmutation-doped GaAs

Journal Article · Sun Dec 31 23:00:00 EST 1995 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.53.987· OSTI ID:278535

Kuriyama, K; Sakai, K ^[1]; Okada, M ^[2]

---

1. College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184 (Japan)
2. Research Reactor Institute, Kyoto University, Kumatori, Osaka 590-04 (Japan)

Coupling between the longitudinal-optic (LO) phonon mode and the longitudinal plasma mode in neutron-transmutation-doped (NTD) semi-insulating GaAs was studied using Raman-scattering spectroscopy and a Fourier-transform infrared spectrometer. When the electron concentration due to the activation of NTD impurities (Ge{sub Ga} and Se{sub As}) approaches {approximately}8{times}10{sup 16} cm{sup {minus}3}, the LO-phonon{endash}plasmon coupling is observed. This behavior is consistent with the free-electron absorption due to the activation of NTD impurities in samples annealed above 600{degree}C. {copyright} {ital 1996 The American Physical Society.}

• OSTI ID: 278535
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 3 Vol. 53; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
ABSORPTION SPECTRA
ANNEALING
CRYSTAL DEFECTS
DOPED MATERIALS
GALLIUM ARSENIDES
GERMANIUM ADDITIONS
IMPURITIES
INTERSTITIALS
NEUTRON FLUX
PHONONS
PLASMONS
RADIATION EFFECTS
RAMAN SPECTRA
SELENIUM ADDITIONS
TRANSMUTATION
VACANCIES