A phonon-plasmon coupling study on Ge-doped GaAs epitaxial films

Journal Article · Mon Jul 01 04:00:00 EDT 1996 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.51228· OSTI ID:451088

Munoz-Hernandez, R A; Jimenez-Sandoval, S; Torres-Delgado, G ^[1]; Roch, C; Chen, X K; Irwin, J C ^[2]

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1. Departamento de Fisica, Centro de Investigacion y de Estudios Avanzados del IPN, Apartado Postal 14-740, Mexico, D.F. 07000 (Mexico)
2. Department of Physics, Simon Fraser University, Burnaby, B.C., (Canada) V5A IS6

The phonon-plasmon coupling of {ital p}-type, Ge-doped gallium arsenide films have been study using Raman spectroscopy. The films were grown epitaxially on (100) GaAs substrates by liquid phase epitaxy employing Ge as dopant at various concentrations, which resulted in films with hole densities in the range of 5{times}10{sup 17}{minus}5{times}10{sup 20} cm{sup {minus}3}. The Raman experiments were performed at near backscattering geometry at room temperature, 100 and 20 K. In the configuration employed only the LO mode is allowed. The intensity, frequency and linewidth of this mode have been discussed in terms of LO phonon-plasmon coupling due to impurity-induced Fr{umlt o}hlich interaction and or deformation potential mechanisms. {copyright} {ital 1996 American Institute of Physics.}

• OSTI ID: 451088
• Report Number(s): CONF-9409431--
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 378; ISSN 0094-243X; ISSN APCPCS
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
AMBIENT TEMPERATURE
CARRIER DENSITY
DOPED MATERIALS
ELECTRON-PHONON COUPLING
FILMS
GALLIUM ARSENIDES
GERMANIUM ADDITIONS
LIQUID PHASE EPITAXY
PHONON-PLASMON INTERACTIONS
PHONONS
PLASMONS
RAMAN SPECTRA
SOLID-STATE PLASMA
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0065-0273 K