Depth uniformity of electrical properties and doping limitation in neutron-transmutation-doped semi-insulating GaAs

Journal Article · Sat Mar 31 23:00:00 EST 1990 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.345303· OSTI ID:6925094

Satoh, M; Kuriyama, K ^[1]; Kawakubo, T ^[2]

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1. College of Engineering Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184, Japan (JP)
2. Research Reactor Institute, Kyoto University, Kumatori, Osaka 590-04, Japan (JP)

Depth uniformity of electrical properties has been evaluated for neutron-transmutation-doped (NTD), semi-insulating GaAs irradiated with thermal neutrons of 1.5{times}10{sup 18} cm{sup {minus}2} by the van der Pauw method combined with iterative etching of the surface. In NTD-GaAs wafers (thickness {similar to}410 {mu}m) annealed for 30 min at 700 {degree}C, the depth profiles of the resistivity, the carrier concentration, and the Hall mobility show constant values of 1{times}10{sup {minus}2} {Omega} cm, 2.0{times}10{sup 17} cm{sup {minus}3}, and 3100 cm{sup 2}/V s, respectively, within an experimental error of 5%. In an annealing process, the redistribution and/or the segregation of NTD impurities is not observed. We also discuss the limitations of low-level NTD in semi-insulating GaAs. It is suggested that the activation of the NTD-impurities below {similar to}1{times}10{sup 16} cm{sup {minus}3} is mainly restricted by the presence of the midgap electron trap (EL2).

• OSTI ID: 6925094
• Journal Information: Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 67:7; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
CARRIER DENSITY
ELECTRICAL PROPERTIES
ELEMENTARY PARTICLES
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HADRONS
HALL EFFECT
NEUTRONS
NUCLEONS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
TRANSMUTATION