Doping-assisted defect control in compound semiconductors

Specht, Petra; Weber, Eicke R.; Weatherford, Todd Russell

Title: Doping-assisted defect control in compound semiconductors

Abstract

The present invention relates to the production of thin film epilayers of III–V and other compounds with acceptor doping wherein the acceptor thermally stabilizes the epilayer, stabilize the naturally incorporated native defect population and therewith maintain the epilayer's beneficial properties upon annealing among other advantageous effects. In particular, balanced doping in which the acceptor concentration is similar to (but does not exceed) the antisite defects in the as-grown material is shown to be particularly advantageous in providing thermal stability, high resistivity and ultrashort trapping times. In particular, MBE growth of LT-GaAs epilayers with balanced Be doping is described in detail. The growth conditions greatly enhance the materials reproducibility (that is, the yield in processed devices). Such growth techniques can be transferred to other III–V materials if the growth conditions are accurately reproduced. Materials produced herein also demonstrate advantages in reproducibility, reliability and radiation hardening.

Inventors:: Specht, Petra; Weber, Eicke R.; Weatherford, Todd Russell

Publication Date:: Tue Jul 11 00:00:00 EDT 2006

Research Org.:: The United States of America as represented by the Secretary of the Navy, Washington, DC (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1175828

Patent Number(s):: 7,074,697

Application Number:: 10/706,610

Assignee:: The Regents of the University of California (Oakland, CA); The United States of America as represented by the Secretary of the Navy (Washington, DC)

DOE Contract Number:: AC03-76SF00098

Resource Type:: Patent

Resource Relation:: Patent File Date: 2003 Nov 12

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Specht, Petra, Weber, Eicke R., and Weatherford, Todd Russell. Doping-assisted defect control in compound semiconductors.  United States: N. p., 2006. 
        Web.

Copy to clipboard


                    Specht, Petra, Weber, Eicke R., & Weatherford, Todd Russell. Doping-assisted defect control in compound semiconductors.  United States.

Copy to clipboard


                    Specht, Petra, Weber, Eicke R., and Weatherford, Todd Russell. 2006.  
        "Doping-assisted defect control in compound semiconductors".  United States.  https://www.osti.gov/servlets/purl/1175828.

Copy to clipboard


                    
@article{osti_1175828,

  title        = {Doping-assisted defect control in compound semiconductors},

  author       = {Specht, Petra and Weber, Eicke R. and Weatherford, Todd Russell},

  abstractNote = {The present invention relates to the production of thin film epilayers of III–V and other compounds with acceptor doping wherein the acceptor thermally stabilizes the epilayer, stabilize the naturally incorporated native defect population and therewith maintain the epilayer's beneficial properties upon annealing among other advantageous effects. In particular, balanced doping in which the acceptor concentration is similar to (but does not exceed) the antisite defects in the as-grown material is shown to be particularly advantageous in providing thermal stability, high resistivity and ultrashort trapping times. In particular, MBE growth of LT-GaAs epilayers with balanced Be doping is described in detail. The growth conditions greatly enhance the materials reproducibility (that is, the yield in processed devices). Such growth techniques can be transferred to other III–V materials if the growth conditions are accurately reproduced. Materials produced herein also demonstrate advantages in reproducibility, reliability and radiation hardening.},

  doi          = {},

  url          = {https://www.osti.gov/biblio/1175828},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue Jul 11 00:00:00 EDT 2006},

  month        = {Tue Jul 11 00:00:00 EDT 2006}

}

Copy to clipboard

Patent:

View Patent

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Formation of two‐dimensional arsenic‐precipitate arrays in GaAs
journal, July 1992

Melloch, M. R.; Otsuka, N.; Mahalingam, K.
Applied Physics Letters, Vol. 61, Issue 2
https://doi.org/10.1063/1.108210

Tem Study of the Structure of Mbe GaAs Layers Grown at Low Temperature
journal, January 1990

Liliental-Weber, Zuzanna
MRS Proceedings, Vol. 198
https://doi.org/10.1557/PROC-198-371

Electron and hole capture cross-sections at deep centers in gallium arsenide
journal, January 1979

Mitonneau, A.; Mircea, A.; Martin, G. M.
Revue de Physique Appliquée, Vol. 14, Issue 10
https://doi.org/10.1051/rphysap:019790014010085300

Enhanced arsenic excess in low-temperature grown GaAs due to indium doping
journal, June 1997

Bert, N. A.; Chaldyshev, V. V.; Kunitsyn, A. E.
Applied Physics Letters, Vol. 70, Issue 23
https://doi.org/10.1063/1.119091

Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures
journal, October 1990

Melloch, M. R.; Otsuka, N.; Woodall, J. M.
Applied Physics Letters, Vol. 57, Issue 15
https://doi.org/10.1063/1.103343

Incorporation and thermal stability of defects in highly p-conductive non-stoichiometric GaAs:Be
journal, December 2001

Specht, P.; Cich, M. J.; Zhao, R.
Physica B: Condensed Matter, Vol. 308-310
https://doi.org/10.1016/S0921-4526(01)00809-2

Effects of very low growth rates on GaAs grown by molecular beam epitaxy at low substrate temperatures
journal, May 1983

Metze, G. M.; Calawa, A. R.
Applied Physics Letters, Vol. 42, Issue 9
https://doi.org/10.1063/1.94110

Mechanism responsible for the semi‐insulating properties of low‐temperature‐grown GaAs
journal, December 1994

Liu, X.; Prasad, A.; Chen, W. M.
Applied Physics Letters, Vol. 65, Issue 23
https://doi.org/10.1063/1.112490

Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures
journal, December 1991

Gupta, S.; Frankel, M. Y.; Valdmanis, J. A.
Applied Physics Letters, Vol. 59, Issue 25
https://doi.org/10.1063/1.105729

Time-resolved reflectivity measurement of thermally stabilized low temperature grown GaAs doped with beryllium
conference, January 1998

Zhao, R.; Specht, P.; Lutz, R. C.
10th International Semiconducting and Insulating Materials, Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)
https://doi.org/10.1109/SIM.1998.785092

New MBE buffer used to eliminate backgating in GaAs MESFETs
journal, February 1988

Smith, F. W.; Calawa, A. R.; Chen, C. -L.
IEEE Electron Device Letters, Vol. 9, Issue 2
https://doi.org/10.1109/55.2046

Structural and photoluminescence analysis of Er implanted LT-GaAs
conference, January 1998

Maltez, R. L.; Liliental-Weber, Z.; Washburn, J.
10th International Semiconducting and Insulating Materials, Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)
https://doi.org/10.1109/SIM.1998.785090

Picosecond spectroscopy of plastically deformed GaAs
journal, January 1994

Oestreich, M.; Rühle, W. W.; Krüger, J.
Journal of Luminescence, Vol. 58, Issue 1-6
https://doi.org/10.1016/0022-2313(94)90376-X

Defect engineering in MBE grown GaAs based materials
conference, January 2000

Specht, P.; Cich, M. J.; Zhao, R.
2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046)
https://doi.org/10.1109/SIM.2000.939200

Ultrafast high‐intensity nonlinear absorption dynamics in low‐temperature grown gallium arsenide
journal, October 1996

Siegner, U.; Fluck, R.; Zhang, G.
Applied Physics Letters, Vol. 69, Issue 17
https://doi.org/10.1063/1.117701

Identification and Quantification of Defects in Highly Si-Doped GaAs by Positron Annihilation and Scanning Tunneling Microscopy
journal, April 1997

Gebauer, J.; Krause-Rehberg, R.; Domke, C.
Physical Review Letters, Vol. 78, Issue 17
https://doi.org/10.1103/PhysRevLett.78.3334

Defect identification in GaAs grown at low temperatures by positron annihilation
journal, June 2000

Gebauer, J.; Börner, F.; Krause-Rehberg, R.
Journal of Applied Physics, Vol. 87, Issue 12
https://doi.org/10.1063/1.373549

Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a dense EL 2-like band
journal, August 1990

Look, D. C.; Walters, D. C.; Manasreh, M. O.
Physical Review B, Vol. 42, Issue 6
https://doi.org/10.1103/PhysRevB.42.3578

The influence of native point defects on the performance of diodes built on neutron-irradiated semi-insulating GaAs
conference,

Kruger, J.
Proceedings of Semiconducting and Semi-Insulating Materials Conference
https://doi.org/10.1109/SIM.1996.571116

Annealing Characteristics Of Low Temperature Grown GaAs:Be
journal, January 1991

Bliss, D. E.; Walukiewicz, W.; Chan, K. T.
MRS Proceedings, Vol. 241
https://doi.org/10.1557/PROC-241-93

Control of stoichiometry dependent defects in low temperature GaAs
conference, January 1996

Luysberg, M.; Sohn, H.; Prasad, A.
Proceedings of Semiconducting and Semi-Insulating Materials Conference
https://doi.org/10.1109/SIM.1996.570869

Effects of low-temperature buffer-layer thickness and growth temperature on the SEE sensitivity of GaAs HIGFET circuits
journal, January 1997

Weatherford, T. R.; Marshall, P. W.; Marshall, C. J.
IEEE Transactions on Nuclear Science, Vol. 44, Issue 6
https://doi.org/10.1109/23.659049

Minority carrier capture cross section of the EL2 defect in GaAs
journal, November 1992

Zaidi, M. A.; Maaref, H.; Bourgoin, J. C.
Applied Physics Letters, Vol. 61, Issue 20
https://doi.org/10.1063/1.108149

Native point defects in low‐temperature‐grown GaAs
journal, July 1995

Liu, X.; Prasad, A.; Nishio, J.
Applied Physics Letters, Vol. 67, Issue 2
https://doi.org/10.1063/1.114782

Ultrafast carrier dynamics in III-V semiconductors grown by molecular-beam epitaxy at very low substrate temperatures
journal, January 1992

Gupta, S.; Whitaker, J. F.; Mourou, G. A.
IEEE Journal of Quantum Electronics, Vol. 28, Issue 10
https://doi.org/10.1109/3.159553

Effects of the growth temperature and As/Ga flux ratio on the incorporation of excess As into low temperature grown GaAs
journal, January 1998

Luysberg, M.; Sohn, H.; Prasad, A.
Journal of Applied Physics, Vol. 83, Issue 1
https://doi.org/10.1063/1.366723

A new optical temperature measurement technique for semiconductor substrates in molecular beam epitaxy
journal, March 1991

Weilmeier, M. K.; Colbow, K. M.; Tiedje, T.
Canadian Journal of Physics, Vol. 69, Issue 3-4
https://doi.org/10.1139/p91-068

Thermal Stabilization of Non-Stoichiometric GaAs through Beryllium Doping
journal, January 1998

Lutz, R. C.; Specht, P.; Zhao, R.
MRS Proceedings, Vol. 510
https://doi.org/10.1557/PROC-510-55

Defect Control in As-Rich GaAs
journal, December 1997

Specht, P.; Jeong, S.; Sohn, Hoon
Materials Science Forum, Vol. 258-263
https://doi.org/10.4028/www.scientific.net/MSF.258-263.951

High-carrier-density electron dynamics in low-temperature-grown GaAs
journal, June 1997

Sosnowski, T. S.; Norris, T. B.; Wang, H. H.
Applied Physics Letters, Vol. 70, Issue 24
https://doi.org/10.1063/1.119138

Anomalies in MODFET's with a low-temperature buffer
journal, January 1990

Lin, B. J. -F.; Kocot, C. P.; Mars, D. E.
IEEE Transactions on Electron Devices, Vol. 37, Issue 1
https://doi.org/10.1109/16.43799

Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures
journal, July 1998

Chaldyshev, V. V.; Kunitsyn, A. E.; Tret’yakov, V. V.
Semiconductors, Vol. 32, Issue 7
https://doi.org/10.1134/1.1187485

On compensation and conductivity models for molecular‐beam‐epitaxial GaAs grown at low temperature
journal, September 1991

Look, D. C.
Journal of Applied Physics, Vol. 70, Issue 6
https://doi.org/10.1063/1.349295

Subband gap carrier dynamics in low-temperature-grown GaAs
journal, April 1997

Grenier, P.; Whitaker, J. F.
Applied Physics Letters, Vol. 70, Issue 15
https://doi.org/10.1063/1.118802

Electrical properties and thermal stability of Be-doped nonstoichiometric GaAs
conference, January 1998

Lutz, R. C.; Specht, P.; Zhao, R.
10th International Semiconducting and Insulating Materials, Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)
https://doi.org/10.1109/SIM.1998.785088

Identification of As _Ga antisites in plastically deformed GaAs
journal, September 1982

Weber, E. R.; Ennen, H.; Kaufmann, U.
Journal of Applied Physics, Vol. 53, Issue 9
https://doi.org/10.1063/1.331577

Similar records in OSTI.GOV collections:

A thermodynamic analysis of native point defect and dopant solubilities in zinc-blende III-V semiconductors

Journal Article Hurle, D - Journal of Applied Physics

A thermodynamic model is used to analyze available experimental data relevant to point defects in the binary zinc-blende III-V compounds (Ga,In)-(P,As,Sb). The important point defects and their complexes in each of the materials are identified and included in the model. Essentially all of the available experimental data on dopant solubility, crystal density, and lattice parameter of melt and solution grown crystals and epilayers are reproduced by the model. It extends an earlier study [Hurle, J. Appl. Phys. 85, 6957 (1999)] devoted solely to GaAs. Values for the enthalpy and entropy of formation of both native and dopant related point defectsmore »« less
https://doi.org/10.1063/1.3386412
Structure, defects, and optical properties of commensurate GaN/ZnGeN ₂ /GaN double heterojunctions

Journal Article Tellekamp, M.; Miller, M.; Zhou, Lin; ... - Journal of Materials Chemistry C

Materials solutions are required to enhance radiative recombination in the 520 nm to 620 nm wavelength region, termed the ‘green gap’, where III-N emitters are inefficient and phosphide materials cannot emit due to an indirect transition. The II–IV-N₂ family of materials (II = Zn, Mg and IV = Si, Ge, Sn) provides a potential solution; the compounds are structurally analogous to the III-N materials with direct optical band gaps, and published models suggest heteroepitaxial integration of ZnGeN₂ into GaN LEDs may significantly improve recombination efficiency. In this work we present GaN/ZnGeN₂/GaN double heterojunctions grown by molecular beam epitaxy (MBE). Themore »« less
https://doi.org/10.1039/D3TC02425C
Defects and properties of cadmium oxide based transparent conductors

Journal Article Detert, D.; Dubon, O.; Chen, Guibin; ... - Journal of Applied Physics

Transparent conductors play an increasingly important role in a number of semiconductor technologies. This paper reports on the defects and properties of Cadmium Oxide, a transparent conducting oxide which can be potentially used for full spectrum photovoltaics. We carried out a systematic investigation on the effects of defects in CdO thin films undoped and intentionally doped with In and Ga under different deposition and annealing conditions. We found that at low growth temperatures (<200 °C), sputter deposition tends to trap both oxygen vacancies and compensating defects in the CdO film resulting in materials with high electron concentration of ∼2 × 10{sup 20}/cm{sup 3}more »« less
https://doi.org/10.1063/1.4948236
Antisites in III-V semiconductors: Density functional theory calculations

Journal Article Tahini, H. - Journal of Applied Physics

Density functional based simulation, corrected for finite size effects, is used to investigate systematically the formation of antisite defects in III-V semiconductors (III = Al, Ga, and In and V = P, As, and Sb). Different charge states are modelled as a function of the Fermi level and under different growth conditions. The formation energies of group III antisites (III{sub V}{sup q}) decrease with increasing covalent radius of the group V atom though not group III radius, whereas group V antisites (V{sub III}{sup q}) show a consistent decrease in formation energies with increase in group III and group V covalent radii. In general, III{submore »« less
https://doi.org/10.1063/1.4887135
The antimony-vacancy defect in p-type germanium

Journal Article Lindberg, C; Hansen, J; Bomholt, P; ... - Applied Physics Letters

Ge-n{sup +}p mesa diodes have been produced in 2-{omega} cm single crystals using a molecular-beam epitaxy (MBE) process to grow the Sb-doped epitaxial Ge n{sup +}-top layer. The diodes are characterized by a leakage current at room temperature of 8x10{sup -4} A/cm{sup 2} at a reverse bias of 3 V. The diodes have been used to study irradiation-induced defects in p-type Ge, in particular Sb-related defects, where Sb stems from in-diffusion during the MBE growth. Two lines in the deep level transient spectroscopy (DLTS) spectra are related to the presence of Sb. One of these lines originates from the single-acceptormore »« less
https://doi.org/10.1063/1.2112168

Similar Records

Title: Doping-assisted defect control in compound semiconductors

Abstract

Citation Formats

Formation of two‐dimensional arsenic‐precipitate arrays in GaAs journal, July 1992

Tem Study of the Structure of Mbe GaAs Layers Grown at Low Temperature journal, January 1990

Electron and hole capture cross-sections at deep centers in gallium arsenide journal, January 1979

Enhanced arsenic excess in low-temperature grown GaAs due to indium doping journal, June 1997

Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures journal, October 1990

Incorporation and thermal stability of defects in highly p-conductive non-stoichiometric GaAs:Be journal, December 2001

Effects of very low growth rates on GaAs grown by molecular beam epitaxy at low substrate temperatures journal, May 1983

Mechanism responsible for the semi‐insulating properties of low‐temperature‐grown GaAs journal, December 1994

Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures journal, December 1991

Time-resolved reflectivity measurement of thermally stabilized low temperature grown GaAs doped with beryllium conference, January 1998

New MBE buffer used to eliminate backgating in GaAs MESFETs journal, February 1988

Structural and photoluminescence analysis of Er implanted LT-GaAs conference, January 1998

Picosecond spectroscopy of plastically deformed GaAs journal, January 1994

Defect engineering in MBE grown GaAs based materials conference, January 2000

Ultrafast high‐intensity nonlinear absorption dynamics in low‐temperature grown gallium arsenide journal, October 1996

Identification and Quantification of Defects in Highly Si-Doped GaAs by Positron Annihilation and Scanning Tunneling Microscopy journal, April 1997

Defect identification in GaAs grown at low temperatures by positron annihilation journal, June 2000

Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a dense EL 2-like band journal, August 1990

The influence of native point defects on the performance of diodes built on neutron-irradiated semi-insulating GaAs conference,

Annealing Characteristics Of Low Temperature Grown GaAs:Be journal, January 1991

Control of stoichiometry dependent defects in low temperature GaAs conference, January 1996

Effects of low-temperature buffer-layer thickness and growth temperature on the SEE sensitivity of GaAs HIGFET circuits journal, January 1997

Minority carrier capture cross section of the EL2 defect in GaAs journal, November 1992

Native point defects in low‐temperature‐grown GaAs journal, July 1995

Ultrafast carrier dynamics in III-V semiconductors grown by molecular-beam epitaxy at very low substrate temperatures journal, January 1992

Effects of the growth temperature and As/Ga flux ratio on the incorporation of excess As into low temperature grown GaAs journal, January 1998

A new optical temperature measurement technique for semiconductor substrates in molecular beam epitaxy journal, March 1991

Thermal Stabilization of Non-Stoichiometric GaAs through Beryllium Doping journal, January 1998

Defect Control in As-Rich GaAs journal, December 1997

High-carrier-density electron dynamics in low-temperature-grown GaAs journal, June 1997

Anomalies in MODFET's with a low-temperature buffer journal, January 1990

Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures journal, July 1998

On compensation and conductivity models for molecular‐beam‐epitaxial GaAs grown at low temperature journal, September 1991

Subband gap carrier dynamics in low-temperature-grown GaAs journal, April 1997

Electrical properties and thermal stability of Be-doped nonstoichiometric GaAs conference, January 1998

Identification of As Ga antisites in plastically deformed GaAs journal, September 1982

Formation of two‐dimensional arsenic‐precipitate arrays in GaAs
journal, July 1992

Tem Study of the Structure of Mbe GaAs Layers Grown at Low Temperature
journal, January 1990

Electron and hole capture cross-sections at deep centers in gallium arsenide
journal, January 1979

Enhanced arsenic excess in low-temperature grown GaAs due to indium doping
journal, June 1997

Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures
journal, October 1990

Incorporation and thermal stability of defects in highly p-conductive non-stoichiometric GaAs:Be
journal, December 2001

Effects of very low growth rates on GaAs grown by molecular beam epitaxy at low substrate temperatures
journal, May 1983

Mechanism responsible for the semi‐insulating properties of low‐temperature‐grown GaAs
journal, December 1994

Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures
journal, December 1991

Time-resolved reflectivity measurement of thermally stabilized low temperature grown GaAs doped with beryllium
conference, January 1998

New MBE buffer used to eliminate backgating in GaAs MESFETs
journal, February 1988

Structural and photoluminescence analysis of Er implanted LT-GaAs
conference, January 1998

Picosecond spectroscopy of plastically deformed GaAs
journal, January 1994

Defect engineering in MBE grown GaAs based materials
conference, January 2000

Ultrafast high‐intensity nonlinear absorption dynamics in low‐temperature grown gallium arsenide
journal, October 1996

Identification and Quantification of Defects in Highly Si-Doped GaAs by Positron Annihilation and Scanning Tunneling Microscopy
journal, April 1997

Defect identification in GaAs grown at low temperatures by positron annihilation
journal, June 2000

Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a dense EL 2-like band
journal, August 1990

The influence of native point defects on the performance of diodes built on neutron-irradiated semi-insulating GaAs
conference,

Annealing Characteristics Of Low Temperature Grown GaAs:Be
journal, January 1991

Control of stoichiometry dependent defects in low temperature GaAs
conference, January 1996

Effects of low-temperature buffer-layer thickness and growth temperature on the SEE sensitivity of GaAs HIGFET circuits
journal, January 1997

Minority carrier capture cross section of the EL2 defect in GaAs
journal, November 1992

Native point defects in low‐temperature‐grown GaAs
journal, July 1995

Ultrafast carrier dynamics in III-V semiconductors grown by molecular-beam epitaxy at very low substrate temperatures
journal, January 1992

Effects of the growth temperature and As/Ga flux ratio on the incorporation of excess As into low temperature grown GaAs
journal, January 1998

A new optical temperature measurement technique for semiconductor substrates in molecular beam epitaxy
journal, March 1991

Thermal Stabilization of Non-Stoichiometric GaAs through Beryllium Doping
journal, January 1998

Defect Control in As-Rich GaAs
journal, December 1997

High-carrier-density electron dynamics in low-temperature-grown GaAs
journal, June 1997

Anomalies in MODFET's with a low-temperature buffer
journal, January 1990

Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures
journal, July 1998

On compensation and conductivity models for molecular‐beam‐epitaxial GaAs grown at low temperature
journal, September 1991

Subband gap carrier dynamics in low-temperature-grown GaAs
journal, April 1997

Electrical properties and thermal stability of Be-doped nonstoichiometric GaAs
conference, January 1998

Identification of As _Ga antisites in plastically deformed GaAs
journal, September 1982