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Title: Polycrystalline silicon semiconducting material by nuclear transmutation doping

Abstract

A NTD semiconductor material comprising polycrystalline silicon having a mean grain size less than 1000 microns and containing phosphorus dispersed uniformly throughout the silicon rather than at the grain boundaries.

Inventors:
 [1];  [2];  [2];  [1]
  1. Knoxville, TN
  2. Oak Ridge, TN
Issue Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
OSTI Identifier:
863237
Patent Number(s):
4129463
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
DOE Contract Number:  
W-7405-ENG-26
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
polycrystalline; silicon; semiconducting; material; nuclear; transmutation; doping; ntd; semiconductor; comprising; mean; grain; size; 1000; microns; containing; phosphorus; dispersed; uniformly; throughout; boundaries; conducting material; material comprising; grain boundaries; semiconductor material; grain size; polycrystalline silicon; crystalline silicon; nuclear transmutation; semiconducting material; uniformly throughout; dispersed uniformly; /136/148/252/376/438/

Citation Formats

Cleland, John W, Westbrook, Russell D, Wood, Richard F, and Young, Rosa T. Polycrystalline silicon semiconducting material by nuclear transmutation doping. United States: N. p., 1978. Web.
Cleland, John W, Westbrook, Russell D, Wood, Richard F, & Young, Rosa T. Polycrystalline silicon semiconducting material by nuclear transmutation doping. United States.
Cleland, John W, Westbrook, Russell D, Wood, Richard F, and Young, Rosa T. Sun . "Polycrystalline silicon semiconducting material by nuclear transmutation doping". United States. https://www.osti.gov/servlets/purl/863237.
@article{osti_863237,
title = {Polycrystalline silicon semiconducting material by nuclear transmutation doping},
author = {Cleland, John W and Westbrook, Russell D and Wood, Richard F and Young, Rosa T},
abstractNote = {A NTD semiconductor material comprising polycrystalline silicon having a mean grain size less than 1000 microns and containing phosphorus dispersed uniformly throughout the silicon rather than at the grain boundaries.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1978},
month = {1}
}

Patent:

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