Polycrystalline silicon semiconducting material by nuclear transmutation doping
Abstract
A NTD semiconductor material comprising polycrystalline silicon having a mean grain size less than 1000 microns and containing phosphorus dispersed uniformly throughout the silicon rather than at the grain boundaries.
- Inventors:
-
- Knoxville, TN
- Oak Ridge, TN
- Issue Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- OSTI Identifier:
- 863237
- Patent Number(s):
- 4129463
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- W-7405-ENG-26
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- polycrystalline; silicon; semiconducting; material; nuclear; transmutation; doping; ntd; semiconductor; comprising; mean; grain; size; 1000; microns; containing; phosphorus; dispersed; uniformly; throughout; boundaries; conducting material; material comprising; grain boundaries; semiconductor material; grain size; polycrystalline silicon; crystalline silicon; nuclear transmutation; semiconducting material; uniformly throughout; dispersed uniformly; /136/148/252/376/438/
Citation Formats
Cleland, John W, Westbrook, Russell D, Wood, Richard F, and Young, Rosa T. Polycrystalline silicon semiconducting material by nuclear transmutation doping. United States: N. p., 1978.
Web.
Cleland, John W, Westbrook, Russell D, Wood, Richard F, & Young, Rosa T. Polycrystalline silicon semiconducting material by nuclear transmutation doping. United States.
Cleland, John W, Westbrook, Russell D, Wood, Richard F, and Young, Rosa T. Sun .
"Polycrystalline silicon semiconducting material by nuclear transmutation doping". United States. https://www.osti.gov/servlets/purl/863237.
@article{osti_863237,
title = {Polycrystalline silicon semiconducting material by nuclear transmutation doping},
author = {Cleland, John W and Westbrook, Russell D and Wood, Richard F and Young, Rosa T},
abstractNote = {A NTD semiconductor material comprising polycrystalline silicon having a mean grain size less than 1000 microns and containing phosphorus dispersed uniformly throughout the silicon rather than at the grain boundaries.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 1978},
month = {Sun Jan 01 00:00:00 EST 1978}
}
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