Photonuclear transmutation doping in gallium-based semiconductor materials

Kwon, Jae Wan; Nguyen, Quang

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Title: Photonuclear transmutation doping in gallium-based semiconductor materials

Abstract

The present invention relates to various high quality n-type and p-type doped gallium-based semiconductor materials, electronic components incorporating these materials, and processes of producing these materials. In particular, The present invention relates processes to achieve high quality, uniform doping of a whole wafer or a thin layer of gallium-based semiconductor materials for various applications such as a vertical power transistor or diode.

Inventors:: Kwon, Jae Wan; Nguyen, Quang

Issue Date:: Tue Jan 10 00:00:00 EST 2023

Research Org.:: Univ. of Missouri, Columbia, MO (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1987020

Patent Number(s):: 11551932

Application Number:: 16/905,506

Assignee:: The Curators of the University of Missouri (Columbia, MO)

DOE Contract Number:: AR0000874

Resource Type:: Patent

Resource Relation:: Patent File Date: 06/18/2020

Country of Publication:: United States

Language:: English

Citation Formats


                    Kwon, Jae Wan, and Nguyen, Quang. Photonuclear transmutation doping in gallium-based semiconductor materials.  United States: N. p., 2023. 
        Web.

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                    Kwon, Jae Wan, & Nguyen, Quang. Photonuclear transmutation doping in gallium-based semiconductor materials.  United States.

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                    Kwon, Jae Wan, and Nguyen, Quang. Tue .  
        "Photonuclear transmutation doping in gallium-based semiconductor materials".  United States.  https://www.osti.gov/servlets/purl/1987020.

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@article{osti_1987020,

  title        = {Photonuclear transmutation doping in gallium-based semiconductor materials},

  author       = {Kwon, Jae Wan and Nguyen, Quang},

  abstractNote = {The present invention relates to various high quality n-type and p-type doped gallium-based semiconductor materials, electronic components incorporating these materials, and processes of producing these materials. In particular, The present invention relates processes to achieve high quality, uniform doping of a whole wafer or a thin layer of gallium-based semiconductor materials for various applications such as a vertical power transistor or diode.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue Jan 10 00:00:00 EST 2023},

  month        = {Tue Jan 10 00:00:00 EST 2023}

}

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Works referenced in this record:

Method of producing homogeneously doped p-conductive semiconductor materials
patent, May 1977

Martin, Joachim; Haas, Ernst; Reuschel, Konrad
US Patent Document 4,025,365
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/4025365

Photonuclear transmutation doping of semiconductors
journal, April 1988

Findlay, D. J. S.; Totterdell, D. H. J.
Semiconductor Science and Technology, Vol. 3, Issue 4
https://doi.org/10.1088/0268-1242/3/4/018

Shedding light on doping of gallium nitride
journal, July 2012

Lyons, John L.; Janotti, Anderson; Van de Walle, Chris G.
SPIE Newsroom
https://doi.org/10.1117/2.1201206.004302

Methods for Wafer Bonding, and for Nucleating Bonding Nanophases
patent-application, August 2015

Herbots, Nichole; Bennett-Kennett, Ross; Murphy, Ashlee
US Patent Application 14/428696; 20150243629
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20150243629

Photonuclear Reaction Cross Sections for Gallium Isotopes
journal, April 2015

Akkoyun, S.; Bayram, T.; Kara, S. O.
Journal of Physics: Conference Series, Vol. 590
https://doi.org/10.1088/1742-6596/590/1/012047

Neutron transmutation doping effects in GaN
journal, May 2010

Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 28, Issue 3
https://doi.org/10.1116/1.3431083

Local penetrating proton beam transmutation doping method for silicon
patent, September 2000

Liao, Chungpin; Chao, Meihua
US Patent Document 6,114,225
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6114225

NUBA Conference Series 1: Nuclear Physics and Astrophysics
journal, April 2015

Boztosun, I.; Balantekin, A. B.; Kucuk, Y.
Journal of Physics: Conference Series, Vol. 590
https://doi.org/10.1088/1742-6596/590/1/011001

Neutron transmutation doping of a silicon wafer
patent, March 1990

Takasu, Shin'ichiro; Ohwa, Michihiro; Kashima, Kazuhiko
US Patent Document 4,910,156
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/4910156

III-V Field Effect Transistor on a Dielectric Layer
patent-application, June 2017

Cheng, Cheng-Wei; Kiewra, Edward William; Majumdar, Amlan
US Patent Application 14/974019; 20170179238
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20170179238

Lattice distortions and the transmuted-Ge related luminescence in neutron-transmutation-doped GaN
journal, May 2002

Kuriyama, K.; Tokumasu, T.; Takahashi, Jun
Applied Physics Letters, Vol. 80, Issue 18
https://doi.org/10.1063/1.1477269

Method for Doping Gallium Nitride (GaN) Substrates and the Resulting Doped GaN Substrate
patent-application, July 2003

Cho, Hak Dong; Kang, Sang Kyu
US Patent Application 10/052480; 20030134493
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20030134493

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Similar Records

Title: Photonuclear transmutation doping in gallium-based semiconductor materials

Abstract

Citation Formats

Method of producing homogeneously doped p-conductive semiconductor materials patent, May 1977

Photonuclear transmutation doping of semiconductors journal, April 1988

Shedding light on doping of gallium nitride journal, July 2012

Methods for Wafer Bonding, and for Nucleating Bonding Nanophases patent-application, August 2015

Photonuclear Reaction Cross Sections for Gallium Isotopes journal, April 2015

Neutron transmutation doping effects in GaN journal, May 2010

Local penetrating proton beam transmutation doping method for silicon patent, September 2000

NUBA Conference Series 1: Nuclear Physics and Astrophysics journal, April 2015

Neutron transmutation doping of a silicon wafer patent, March 1990

III-V Field Effect Transistor on a Dielectric Layer patent-application, June 2017

Lattice distortions and the transmuted-Ge related luminescence in neutron-transmutation-doped GaN journal, May 2002

Method for Doping Gallium Nitride (GaN) Substrates and the Resulting Doped GaN Substrate patent-application, July 2003

Method of producing homogeneously doped p-conductive semiconductor materials
patent, May 1977

Photonuclear transmutation doping of semiconductors
journal, April 1988

Shedding light on doping of gallium nitride
journal, July 2012

Methods for Wafer Bonding, and for Nucleating Bonding Nanophases
patent-application, August 2015

Photonuclear Reaction Cross Sections for Gallium Isotopes
journal, April 2015

Neutron transmutation doping effects in GaN
journal, May 2010

Local penetrating proton beam transmutation doping method for silicon
patent, September 2000

NUBA Conference Series 1: Nuclear Physics and Astrophysics
journal, April 2015

Neutron transmutation doping of a silicon wafer
patent, March 1990

III-V Field Effect Transistor on a Dielectric Layer
patent-application, June 2017

Lattice distortions and the transmuted-Ge related luminescence in neutron-transmutation-doped GaN
journal, May 2002

Method for Doping Gallium Nitride (GaN) Substrates and the Resulting Doped GaN Substrate
patent-application, July 2003