Low defect nuclear transmutation doping in nitride-based semiconductor materials

Kwon, Jae Wan; Gahl, John; Brockman, John

Title: Low defect nuclear transmutation doping in nitride-based semiconductor materials

Patent · Tue Nov 29 00:00:00 EST 2022

OSTI ID:1986869

Kwon, Jae Wan; Gahl, John; Brockman, John

Doped nitride-based semiconductor materials and methods of producing these materials are described herein.

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Research Organization:: Univ. of Missouri, Columbia, MO (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

DOE Contract Number:: AR0000874

Assignee:: The Curators of the University of Missouri (Columbia, MO)

Patent Number(s):: 11,515,161

Application Number:: 16/852,186

OSTI ID:: 1986869

Resource Relation:: Patent File Date: 04/17/2020

Country of Publication:: United States

Language:: English

References (12)

Method of producing homogeneously doped p-conductive semiconductor materials Martin, Joachim; Haas, Ernst; Reuschel, Konrad https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/4025365 US Patent Document 4,025,365	patent	May 1977
Photonuclear transmutation doping of semiconductors Findlay, D. J. S.; Totterdell, D. H. J. Semiconductor Science and Technology, Vol. 3, Issue 4 https://doi.org/10.1088/0268-1242/3/4/018	journal	April 1988
Shedding light on doping of gallium nitride Lyons, John L.; Janotti, Anderson; Van de Walle, Chris G. SPIE Newsroom https://doi.org/10.1117/2.1201206.004302	journal	July 2012
Methods for Wafer Bonding, and for Nucleating Bonding Nanophases Herbots, Nichole; Bennett-Kennett, Ross; Murphy, Ashlee https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20150243629 US Patent Application 14/428696; 20150243629	patent-application	August 2015
Neutron transmutation doping effects in GaN Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 28, Issue 3 https://doi.org/10.1116/1.3431083	journal	May 2010
Photonuclear Reaction Cross Sections for Gallium Isotopes Akkoyun, S.; Bayram, T.; Kara, S. O. Journal of Physics: Conference Series, Vol. 590 https://doi.org/10.1088/1742-6596/590/1/012047	journal	April 2015
Local penetrating proton beam transmutation doping method for silicon Liao, Chungpin; Chao, Meihua https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6114225 US Patent Document 6,114,225	patent	September 2000
NUBA Conference Series 1: Nuclear Physics and Astrophysics Boztosun, I.; Balantekin, A. B.; Kucuk, Y. Journal of Physics: Conference Series, Vol. 590 https://doi.org/10.1088/1742-6596/590/1/011001	journal	April 2015
Neutron transmutation doping of a silicon wafer Takasu, Shin'ichiro; Ohwa, Michihiro; Kashima, Kazuhiko https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/4910156 US Patent Document 4,910,156	patent	March 1990
III-V Field Effect Transistor on a Dielectric Layer Cheng, Cheng-Wei; Kiewra, Edward William; Majumdar, Amlan https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20170179238 US Patent Application 14/974019; 20170179238	patent-application	June 2017
Lattice distortions and the transmuted-Ge related luminescence in neutron-transmutation-doped GaN Kuriyama, K.; Tokumasu, T.; Takahashi, Jun Applied Physics Letters, Vol. 80, Issue 18 https://doi.org/10.1063/1.1477269	journal	May 2002
Method for Doping Gallium Nitride (GaN) Substrates and the Resulting Doped GaN Substrate Cho, Hak Dong; Kang, Sang Kyu https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20030134493 US Patent Application 10/052480; 20030134493	patent-application	July 2003

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