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Title: Doped semiconductor material and method for doping same

Abstract

A method for doping semiconductor material and the semiconductor produced by the method are described. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.

Inventors:
Publication Date:
OSTI Identifier:
7078870
Patent Number(s):
PATENTS-US-A342683
Application Number:
ON: DE83002371
Assignee:
Dept. of Energy
DOE Contract Number:  
AC02-76CH00016
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; CRYSTAL DOPING; SEMICONDUCTOR MATERIALS; DIFFUSION; DOPED MATERIALS; ELECTRIC POTENTIAL; ELECTROCHEMISTRY; ELECTRODES; SOLID ELECTROLYTES; CHEMISTRY; ELECTROLYTES; MATERIALS; 420800* - Engineering- Electronic Circuits & Devices- (-1989)

Citation Formats

Yang, C. Y. Doped semiconductor material and method for doping same. United States: N. p., 1982. Web.
Yang, C. Y. Doped semiconductor material and method for doping same. United States.
Yang, C. Y. 1982. "Doped semiconductor material and method for doping same". United States. https://www.osti.gov/servlets/purl/7078870.
@article{osti_7078870,
title = {Doped semiconductor material and method for doping same},
author = {Yang, C. Y.},
abstractNote = {A method for doping semiconductor material and the semiconductor produced by the method are described. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.},
doi = {},
url = {https://www.osti.gov/biblio/7078870}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1982},
month = {1}
}