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Title: Controlling the stoichiometry and doping of semiconductor materials

Methods for treating a semiconductor material are provided. According to an aspect of the invention, the method includes annealing the semiconductor material in the presence of a compound that includes a first element and a second element. The first element provides an overpressure to achieve a desired stoichiometry of the semiconductor material, and the second element provides a dopant to the semiconductor material.
Inventors:
; ; ; ; ;
Issue Date:
OSTI Identifier:
1295614
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO) NREL
Patent Number(s):
9,419,170
Application Number:
14/615,068
Contract Number:
AC36-08GO28308
Resource Relation:
Patent File Date: 2015 Feb 05
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Works referenced in this record:

Dependence of the Minority-Carrier Lifetime on the Stoichiometry of CdTe Using Time-Resolved Photoluminescence and First-Principles Calculations
journal, August 2013