Controlling the stoichiometry and doping of semiconductor materials
Abstract
Methods for treating a semiconductor material are provided. According to an aspect of the invention, the method includes annealing the semiconductor material in the presence of a compound that includes a first element and a second element. The first element provides an overpressure to achieve a desired stoichiometry of the semiconductor material, and the second element provides a dopant to the semiconductor material.
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1295614
- Patent Number(s):
- 9419170
- Application Number:
- 14/615,068
- Assignee:
- Alliance for Sustainable Energy, LLC (Golden, CO)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC36-08GO28308
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2015 Feb 05
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Albin, David, Burst, James, Metzger, Wyatt, Duenow, Joel, Farrell, Stuart, and Colegrove, Eric. Controlling the stoichiometry and doping of semiconductor materials. United States: N. p., 2016.
Web.
Albin, David, Burst, James, Metzger, Wyatt, Duenow, Joel, Farrell, Stuart, & Colegrove, Eric. Controlling the stoichiometry and doping of semiconductor materials. United States.
Albin, David, Burst, James, Metzger, Wyatt, Duenow, Joel, Farrell, Stuart, and Colegrove, Eric. Tue .
"Controlling the stoichiometry and doping of semiconductor materials". United States. https://www.osti.gov/servlets/purl/1295614.
@article{osti_1295614,
title = {Controlling the stoichiometry and doping of semiconductor materials},
author = {Albin, David and Burst, James and Metzger, Wyatt and Duenow, Joel and Farrell, Stuart and Colegrove, Eric},
abstractNote = {Methods for treating a semiconductor material are provided. According to an aspect of the invention, the method includes annealing the semiconductor material in the presence of a compound that includes a first element and a second element. The first element provides an overpressure to achieve a desired stoichiometry of the semiconductor material, and the second element provides a dopant to the semiconductor material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {8}
}
Works referenced in this record:
Dependence of the Minority-Carrier Lifetime on the Stoichiometry of CdTe Using Time-Resolved Photoluminescence and First-Principles Calculations
journal, August 2013
- Ma, Jie; Kuciauskas, Darius; Albin, David
- Physical Review Letters, Vol. 111, Issue 6, Article No. 067402
Advances in control of doping and lifetime in single-crystal and polycrystalline CdTe
conference, June 2014
- Burst, J. M.; Albin, D. S.; Duenow, J. N.
- 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC), 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)