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Title: Controlling the stoichiometry and doping of semiconductor materials

Abstract

Methods for treating a semiconductor material are provided. According to an aspect of the invention, the method includes annealing the semiconductor material in the presence of a compound that includes a first element and a second element. The first element provides an overpressure to achieve a desired stoichiometry of the semiconductor material, and the second element provides a dopant to the semiconductor material.

Inventors:
; ; ; ; ;
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1295614
Patent Number(s):
9,419,170
Application Number:
14/615,068
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Feb 05
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Albin, David, Burst, James, Metzger, Wyatt, Duenow, Joel, Farrell, Stuart, and Colegrove, Eric. Controlling the stoichiometry and doping of semiconductor materials. United States: N. p., 2016. Web.
Albin, David, Burst, James, Metzger, Wyatt, Duenow, Joel, Farrell, Stuart, & Colegrove, Eric. Controlling the stoichiometry and doping of semiconductor materials. United States.
Albin, David, Burst, James, Metzger, Wyatt, Duenow, Joel, Farrell, Stuart, and Colegrove, Eric. Tue . "Controlling the stoichiometry and doping of semiconductor materials". United States. https://www.osti.gov/servlets/purl/1295614.
@article{osti_1295614,
title = {Controlling the stoichiometry and doping of semiconductor materials},
author = {Albin, David and Burst, James and Metzger, Wyatt and Duenow, Joel and Farrell, Stuart and Colegrove, Eric},
abstractNote = {Methods for treating a semiconductor material are provided. According to an aspect of the invention, the method includes annealing the semiconductor material in the presence of a compound that includes a first element and a second element. The first element provides an overpressure to achieve a desired stoichiometry of the semiconductor material, and the second element provides a dopant to the semiconductor material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {8}
}

Patent:

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Works referenced in this record:

Dependence of the Minority-Carrier Lifetime on the Stoichiometry of CdTe Using Time-Resolved Photoluminescence and First-Principles Calculations
journal, August 2013


Advances in control of doping and lifetime in single-crystal and polycrystalline CdTe
conference, June 2014

  • Burst, J. M.; Albin, D. S.; Duenow, J. N.
  • 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC), 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)
  • DOI: 10.1109/PVSC.2014.6925631