Compositions of doped, co-doped and tri-doped semiconductor materials

Lynn, Kelvin; Jones, Kelly; Ciampi, Guido

Title: Compositions of doped, co-doped and tri-doped semiconductor materials

Patent · Tue Dec 06 00:00:00 EST 2011

OSTI ID:1034347

Lynn, Kelvin ^[1]; Jones, Kelly ^[2]; Ciampi, Guido ^[3]

Pullman, WA
Colfax, WA
Watertown, MA

Semiconductor materials suitable for being used in radiation detectors are disclosed. A particular example of the semiconductor materials includes tellurium, cadmium, and zinc. Tellurium is in molar excess of cadmium and zinc. The example also includes aluminum having a concentration of about 10 to about 20,000 atomic parts per billion and erbium having a concentration of at least 10,000 atomic parts per billion.

View Patent

Cite

Export

Save

Research Organization:: Washington State University Research Foundation (Pullman, WA)

Sponsoring Organization:: USDOE

DOE Contract Number:: FG07-06ID14724

Assignee:: Washington State University Research Foundation (Pullman, WA)

Patent Number(s):: 8,070,987

Application Number:: 11/910,504

OSTI ID:: 1034347

Country of Publication:: United States

Language:: English

References (16)

Compensation and deep levels in II–VI compounds Castaldini, A.; Cavallini, A.; Fraboni, B. Materials Science and Engineering: B, Vol. 42, Issue 1-3 https://doi.org/10.1016/S0921-5107(96)01726-6	journal	December 1996
Electronic properties of A centers in CdTe: A comparison with experiment Biernacki, S.; Scherz, U.; Meyer, B. K. Physical Review B, Vol. 48, Issue 16 https://doi.org/10.1103/PhysRevB.48.11726	journal	October 1993
Electrical compensation in CdTe and ${Cd}_{0.9} {Zn}_{0.1} Te$ by intrinsic defects Krsmanovic, N.; Lynn, K. G.; Weber, M. H. Physical Review B, Vol. 62, Issue 24 https://doi.org/10.1103/PhysRevB.62.R16279	journal	December 2000
Chapter 6 Growth Methods of CdTe Nuclear Detector Materials Hage-Ali, Makram; Siffert, Paul Semiconductors for Room Temperature Nuclear Detector Applications https://doi.org/10.1016/S0080-8784(08)62745-3	book	January 1995
Self‐Activation and Self‐Coactivation in Zinc Sulfide Phosphors Prener, J. S.; Williams, F. E. The Journal of Chemical Physics, Vol. 25, Issue 2 https://doi.org/10.1063/1.1742892	journal	August 1956
Possible Application of γ-Ray Spectrometers Based on CdZnTe Detectors Bushuev, A. V.; Zubarev, V. N.; Kozhin, A. F. Atomic Energy, Vol. 92, Issue 5, p. 403-407 https://doi.org/10.1023/A:1019999528118	journal	May 2002
Effect of deep levels on semiconductor carrier concentrations in the case of "strong" compensation Neumark, G. F. Physical Review B, Vol. 26, Issue 4 https://doi.org/10.1103/PhysRevB.26.2250	journal	August 1982
Attempts to growth of undoped CdTe single crystals with high electrical resistivity Rudolph, P.; Kawasaki, S.; Yamashita, S. Journal of Crystal Growth, Vol. 161, Issue 1-4 https://doi.org/10.1016/0022-0248(95)00607-9	journal	April 1996
Fine-scale spatial response of CdZnTe radiation detectors Brunett, B. A.; Van Scyoc, J. M.; Hilton, N. R. IEEE Transactions on Nuclear Science, Vol. 46, Issue 3 https://doi.org/10.1109/23.775521	journal	June 1999
Role of native defects in wide-band-gap semiconductors Laks, D. B.; Van de Walle, C. G.; Neumark, G. F. Physical Review Letters, Vol. 66, Issue 5 https://doi.org/10.1103/PhysRevLett.66.648	journal	February 1991
Improved CdZnTe detectors grown by vertical Bridgman process Lynn, K. G.; Weber, M.; Glass, H. L. MRS Proceedings, Vol. 484 https://doi.org/10.1557/PROC-484-319	journal	January 1997
Extension of longwavelength IR photovoltaic detector operation to near room-temperatures Piotrowski, Jósef; Gawron, Waldemar Infrared Physics & Technology, Vol. 36, Issue 7 https://doi.org/10.1016/1350-4495(95)00033-X	journal	December 1995
First-principles study of DX centers in CdTe, ZnTe, and ${Cd}_{x}$ ${Zn}_{1 - x}$ Te alloys Park, C. H.; Chadi, D. J. Physical Review B, Vol. 52, Issue 16 https://doi.org/10.1103/PhysRevB.52.11884	journal	October 1995
Basic problems of vertical Bridgman growth of CdTe Rudolph, Peter; Mühlberg, Manfred Materials Science and Engineering: B, Vol. 16, Issue 1-3 https://doi.org/10.1016/0921-5107(93)90005-8	journal	January 1993
Self-Compensation Limited Conductivity in Binary Semiconductors. I. Theory Mandel, G. Physical Review, Vol. 134, Issue 4A https://doi.org/10.1103/PhysRev.134.A1073	journal	May 1964
The effect of detector performance on high count rate PET imaging with a tomograph based on position-sensitive detectors Mankoff, D. A.; Muehllehner, G.; Karp, J. S. IEEE Transactions on Nuclear Science, Vol. 35, Issue 1 https://doi.org/10.1109/23.12793	journal	February 1988

Similar Records

Semiconductive materials and associated uses thereof

Patent · Tue Nov 01 00:00:00 EDT 2011 · OSTI ID:1034347

Lynn, Kelvin; Jones, Kelly; Ciampi, Guido

Semiconductive materials and associated uses thereof

Patent · Tue Oct 09 00:00:00 EDT 2012 · OSTI ID:1034347

Lynn, Kelvin; Jones, Kelly; Ciampi, Guido

Scientific/Technical Report: Improvement in compensation and crystal growth of cadmium zinc telluride radiation detectors

Technical Report · Sat May 19 00:00:00 EDT 2007 · OSTI ID:1034347

Lynn, Kelvin G; Jones, Kelly A

Related Subjects

36 MATERIALS SCIENCE

Title: Compositions of doped, co-doped and tri-doped semiconductor materials

Citation Formats

References (16)

Similar Records

Related Subjects