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Title: New Total-Ionizing-Dose Resistant Data Storing Technique for NAND Flash Memory

Abstract

This paper describes a new non-charge-based data storing technique in NAND flash memory called watermark that encodes read-only data in the form of physical properties of flash memory cells. Unlike traditional charge-based data storing method in flash memory, the proposed technique is resistant to total ionizing dose (TID) effects. To evaluate its resistance to irradiation effects, we analyze data stored in several commercial single-level-cell (SLC) flash memory chips from different vendors and technology nodes. These chips are irradiated using a Co-60 gamma-ray source array for up to 100 krad(Si) at Sandia National Laboratories. Experimental evaluation performed on a flash chip from Samsung shows that the intrinsic bit error rate (BER) of watermark increases from 0.8% for TID = 0 krad(Si) to 1% for TID = 100 krad(Si). Conversely, the BER of charge-based data stored on the same chip increases from 0% at TID = 0 krad(Si) to 1.5% at TID = 100 krad(Si). Overall, the results imply that the proposed technique may potentially offer significant improvements in data integrity relative to traditional charge-based data storage for very high radiation (TID > 100 krad(Si)) environments. These gains in data integrity relative to the charge-based data storage are useful in radiation-prone environments,more » but they come at the cost of increased write times and higher BERs before irradiation.« less

Authors:
ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [2]; ORCiD logo [1]; ORCiD logo [1]
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  1. Univ. of Alabama, Huntsville, AL (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Nuclear Energy (NE); USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF)
OSTI Identifier:
1882604
Report Number(s):
SAND2022-9936J
Journal ID: ISSN 1530-4388; 708477
Grant/Contract Number:  
NA0003525; AC07-051D14517; 1929099
Resource Type:
Accepted Manuscript
Journal Name:
IEEE Transactions on Device and Materials Reliability
Additional Journal Information:
Journal Volume: 22; Journal Issue: 3; Journal ID: ISSN 1530-4388
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; watermarking; flash memory cells; nonvolatile memory; resistance; bit error rate; ionizing radiation; standards; NAND flash; memory reliability; single-level cell (SLC); total-ionizing-dose; watermark

Citation Formats

Buddhanoy, Matchima, Sakib, Sadman, Surendranathan, Umeshwarnath, Wasiolek, Maryla, Hattar, Khalid, Milenkovic, Aleksandar, and Ray, Biswajit. New Total-Ionizing-Dose Resistant Data Storing Technique for NAND Flash Memory. United States: N. p., 2022. Web. doi:10.1109/tdmr.2022.3189673.
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Buddhanoy, Matchima, Sakib, Sadman, Surendranathan, Umeshwarnath, Wasiolek, Maryla, Hattar, Khalid, Milenkovic, Aleksandar, & Ray, Biswajit. New Total-Ionizing-Dose Resistant Data Storing Technique for NAND Flash Memory. United States. https://doi.org/10.1109/tdmr.2022.3189673
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Buddhanoy, Matchima, Sakib, Sadman, Surendranathan, Umeshwarnath, Wasiolek, Maryla, Hattar, Khalid, Milenkovic, Aleksandar, and Ray, Biswajit. Mon . "New Total-Ionizing-Dose Resistant Data Storing Technique for NAND Flash Memory". United States. https://doi.org/10.1109/tdmr.2022.3189673. https://www.osti.gov/servlets/purl/1882604.
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@article{osti_1882604,
title = {New Total-Ionizing-Dose Resistant Data Storing Technique for NAND Flash Memory},
author = {Buddhanoy, Matchima and Sakib, Sadman and Surendranathan, Umeshwarnath and Wasiolek, Maryla and Hattar, Khalid and Milenkovic, Aleksandar and Ray, Biswajit},
abstractNote = {This paper describes a new non-charge-based data storing technique in NAND flash memory called watermark that encodes read-only data in the form of physical properties of flash memory cells. Unlike traditional charge-based data storing method in flash memory, the proposed technique is resistant to total ionizing dose (TID) effects. To evaluate its resistance to irradiation effects, we analyze data stored in several commercial single-level-cell (SLC) flash memory chips from different vendors and technology nodes. These chips are irradiated using a Co-60 gamma-ray source array for up to 100 krad(Si) at Sandia National Laboratories. Experimental evaluation performed on a flash chip from Samsung shows that the intrinsic bit error rate (BER) of watermark increases from 0.8% for TID = 0 krad(Si) to 1% for TID = 100 krad(Si). Conversely, the BER of charge-based data stored on the same chip increases from 0% at TID = 0 krad(Si) to 1.5% at TID = 100 krad(Si). Overall, the results imply that the proposed technique may potentially offer significant improvements in data integrity relative to traditional charge-based data storage for very high radiation (TID > 100 krad(Si)) environments. These gains in data integrity relative to the charge-based data storage are useful in radiation-prone environments, but they come at the cost of increased write times and higher BERs before irradiation.},
doi = {10.1109/tdmr.2022.3189673},
journal = {IEEE Transactions on Device and Materials Reliability},
number = 3,
volume = 22,
place = {United States},
year = {Mon Jul 11 00:00:00 EDT 2022},
month = {Mon Jul 11 00:00:00 EDT 2022}
}
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https://doi.org/10.1109/tdmr.2022.3189673
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