Total-Ionizing-Dose Effects on Read Noise of MLC 3-D NAND Memories T

Surendranathan, Umeshwarnath; Wasiolek, Maryla; Hattar, Khalid; Fleetwood, Daniel M.; Ray, Biswajit

doi:10.1109/tns.2021.3140204

Title: Total-Ionizing-Dose Effects on Read Noise of MLC 3-D NAND Memories T

Abstract

This paper analyzes the total ionizing dose (TID) effects on noise characteristics of commercial multi-level-cell (MLC) 3-D NAND memory technology during the read operation. Additionally, the chips were exposed to a Co-60 gamma-ray source for up to 100 krad(Si) of TID. We find that the number of noisy cells in the irradiated chip increases with TID. Bit-flip noise was more dominant for cells in an erased state during irradiation compared to programmed cells.

Authors:

Surendranathan, Umeshwarnath ^[1]; Wasiolek, Maryla ^[2]; Hattar, Khalid ^[2]; Fleetwood, Daniel M. ^[3]; Ray, Biswajit ^[1]

Univ. of Alabama, Huntsville, AL (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Vanderbilt Univ., Nashville, TN (United States)

Publication Date:: Tue Jan 04 00:00:00 EST 2022

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE Office of Nuclear Energy (NE)

OSTI Identifier:: 1841982

Report Number(s):: SAND-2022-0361J
Journal ID: ISSN 0018-9499; 702506

Grant/Contract Number:: NA0003525

Resource Type:: Accepted Manuscript

Journal Name:: IEEE Transactions on Nuclear Science

Additional Journal Information:: Journal Volume: 69; Journal Issue: 3; Journal ID: ISSN 0018-9499

Publisher:: IEEE

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING; radiation effects; flash memories; noise measurement; ionizing radiation; semiconductor device measurement; error correction codes; arrays; 3-D NAND Flash; noise; MLC; error rate; memory controller; total ionizing dose; single event exposure; read-noise

Citation Formats


                    Surendranathan, Umeshwarnath, Wasiolek, Maryla, Hattar, Khalid, Fleetwood, Daniel M., and Ray, Biswajit. Total-Ionizing-Dose Effects on Read Noise of MLC 3-D NAND Memories T.  United States: N. p., 2022. 
Web.  doi:10.1109/tns.2021.3140204.

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                    Surendranathan, Umeshwarnath, Wasiolek, Maryla, Hattar, Khalid, Fleetwood, Daniel M., & Ray, Biswajit. Total-Ionizing-Dose Effects on Read Noise of MLC 3-D NAND Memories T.  United States.  https://doi.org/10.1109/tns.2021.3140204

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                    Surendranathan, Umeshwarnath, Wasiolek, Maryla, Hattar, Khalid, Fleetwood, Daniel M., and Ray, Biswajit. Tue .  
"Total-Ionizing-Dose Effects on Read Noise of MLC 3-D NAND Memories T".  United States.  https://doi.org/10.1109/tns.2021.3140204.  https://www.osti.gov/servlets/purl/1841982.

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@article{osti_1841982,

  title        = {Total-Ionizing-Dose Effects on Read Noise of MLC 3-D NAND Memories T},

  author       = {Surendranathan, Umeshwarnath and Wasiolek, Maryla and Hattar, Khalid and Fleetwood, Daniel M. and Ray, Biswajit},

  abstractNote = {This paper analyzes the total ionizing dose (TID) effects on noise characteristics of commercial multi-level-cell (MLC) 3-D NAND memory technology during the read operation. Additionally, the chips were exposed to a Co-60 gamma-ray source for up to 100 krad(Si) of TID. We find that the number of noisy cells in the irradiated chip increases with TID. Bit-flip noise was more dominant for cells in an erased state during irradiation compared to programmed cells.},

  doi          = {10.1109/tns.2021.3140204},

  journal      = {IEEE Transactions on Nuclear Science},

  number       = 3,

  volume       = 69,

  place        = {United States},

  year         = {Tue Jan 04 00:00:00 EST 2022},

  month        = {Tue Jan 04 00:00:00 EST 2022}

}

Copy to clipboard

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Title: Total-Ionizing-Dose Effects on Read Noise of MLC 3-D NAND Memories T

Abstract

Citation Formats

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Error Instability in Floating Gate Flash Memories Exposed to TID
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Radiation Induced Charge Trapping in Ultrathin ${\rm HfO}_{2}$-Based MOSFETs
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Radiation-Induced Charge Trapping and Low-Frequency Noise of Graphene Transistors
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Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs With HfO₂ Gate Dielectrics
journal, June 2018

Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices
journal, December 2002

Estimating oxide‐trap, interface‐trap, and border‐trap charge densities in metal‐oxide‐semiconductor transistors
journal, April 1994

Gamma-Ray-Induced Error Pattern Analysis for MLC 3-D NAND Flash Memories
journal, May 2021

1/f noise and radiation effects in MOS devices
journal, January 1994

Directional Dependence of Co-60 Irradiation on the Total Dose Response of Flash Memories
journal, January 2019

Total Ionizing Dose Effects in 3-D NAND Flash Memories
journal, January 2019

Effects of Scaling in SEE and TID Response of High Density NAND Flash Memories
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