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Title: Total-Ionizing-Dose Effects on Long-term Data Retention Characteristics of Commercial 3-D NAND Memories

Abstract

This article evaluates the data retention characteristics of irradiated multi-level cell (MLC) 3-D NAND flash memories. We irradiate the memory chips by a Co-60 gamma-ray source for up to 50 krad(Si) and then write a random data pattern on the irradiated chip to find its retention characteristics. The experimental results show that the data retention property of the irradiated chips is significantly degraded compared to the un-irradiated ones. We evaluate two independent strategies to improve the data retention characteristics of the irradiated chips. Furthermore, the first method involves high-temperature annealing of the irradiated chip while the second method suggests pre-programming the memory modules before deploying them in radiation-prone environments.

Authors:
 [1];  [1];  [1];  [2];  [2];  [1]
+ Show Author Affiliations
  1. Univ. of Alabama, Huntsville, AL (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Nuclear Energy (NE); USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1834106
Report Number(s):
SAND-2021-13819J
Journal ID: ISSN 0018-9499; 701926; TRN: US2300123
Grant/Contract Number:  
NA0003525
Resource Type:
Accepted Manuscript
Journal Name:
IEEE Transactions on Nuclear Science
Additional Journal Information:
Journal Volume: 69; Journal Issue: 3; Journal ID: ISSN 0018-9499
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
73 NUCLEAR PHYSICS AND RADIATION PHYSICS; Nonvolatile memory; Electron traps; Radiation effects; Substrates; Flash memory cells; Performance evaluation; Ionizing radiation; 3-D NAND flash; Memory reliability; Multi-level cell (MLC); Total-ionizing-dose

Citation Formats

Buddhanoy, Matchima, Kumari, Preeti, Surendranathan, Umeshwarnath, Wasiolek, Maryla, Hattar, Khalid, and Ray, Biswajit. Total-Ionizing-Dose Effects on Long-term Data Retention Characteristics of Commercial 3-D NAND Memories. United States: N. p., 2021. Web. doi:10.1109/tns.2021.3124484.
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Buddhanoy, Matchima, Kumari, Preeti, Surendranathan, Umeshwarnath, Wasiolek, Maryla, Hattar, Khalid, & Ray, Biswajit. Total-Ionizing-Dose Effects on Long-term Data Retention Characteristics of Commercial 3-D NAND Memories. United States. https://doi.org/10.1109/tns.2021.3124484
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Buddhanoy, Matchima, Kumari, Preeti, Surendranathan, Umeshwarnath, Wasiolek, Maryla, Hattar, Khalid, and Ray, Biswajit. Sat . "Total-Ionizing-Dose Effects on Long-term Data Retention Characteristics of Commercial 3-D NAND Memories". United States. https://doi.org/10.1109/tns.2021.3124484. https://www.osti.gov/servlets/purl/1834106.
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@article{osti_1834106,
title = {Total-Ionizing-Dose Effects on Long-term Data Retention Characteristics of Commercial 3-D NAND Memories},
author = {Buddhanoy, Matchima and Kumari, Preeti and Surendranathan, Umeshwarnath and Wasiolek, Maryla and Hattar, Khalid and Ray, Biswajit},
abstractNote = {This article evaluates the data retention characteristics of irradiated multi-level cell (MLC) 3-D NAND flash memories. We irradiate the memory chips by a Co-60 gamma-ray source for up to 50 krad(Si) and then write a random data pattern on the irradiated chip to find its retention characteristics. The experimental results show that the data retention property of the irradiated chips is significantly degraded compared to the un-irradiated ones. We evaluate two independent strategies to improve the data retention characteristics of the irradiated chips. Furthermore, the first method involves high-temperature annealing of the irradiated chip while the second method suggests pre-programming the memory modules before deploying them in radiation-prone environments.},
doi = {10.1109/tns.2021.3124484},
journal = {IEEE Transactions on Nuclear Science},
number = 3,
volume = 69,
place = {United States},
year = {Sat Nov 13 00:00:00 EST 2021},
month = {Sat Nov 13 00:00:00 EST 2021}
}
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https://doi.org/10.1109/tns.2021.3124484
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