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Title: Radiation-Induced Error Mitigation by Read-Retry Technique for MLC 3-D NAND Flash Memory

Abstract

Here, we have evaluated the Read-Retry (RR) functionality of the 3-D NAND chip of multilevel-cell (MLC) configuration after total ionization dose (TID) exposure. The RR function is typically offered in the high-density state-of-the-art NAND memory chips to recover data once the default memory read method fails to correct data with error correction codes (ECCs). In this work, we have applied the RR method on the irradiated 3-D NAND chip that was exposed with a Co-60 gamma-ray source for TID up to 50 krad (Si). Based on our experimental evaluation results, we have proposed an algorithm to efficiently implement the RR method to extend the radiation tolerance of the NAND memory chip. Our experimental evaluation shows that the RR method coupled with ECC can ensure data integrity of MLC 3-D NAND for TID up to 50 krad (Si).

Authors:
ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [2];  [1]; ORCiD logo [1]
  1. Univ. of Alabama, Huntsville, AL (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Nuclear Energy (NE); National Science Foundation (NSF)
OSTI Identifier:
1787509
Report Number(s):
SAND-2021-0824J
Journal ID: ISSN 0018-9499; 693613
Grant/Contract Number:  
AC04-94AL85000; AC07-051D14517; 1929099; NA0003525
Resource Type:
Accepted Manuscript
Journal Name:
IEEE Transactions on Nuclear Science
Additional Journal Information:
Journal Volume: 68; Journal Issue: 5; Journal ID: ISSN 0018-9499
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 3-D NAND; ionizing radiation; multilevel-cell (MLC); read-retry (RR)

Citation Formats

Kumari, Preeti, Surendranathan, Umeshwarnath, Wasiolek, Maryla, Hattar, Khalid, Bhat, Narayana P., and Ray, Biswajit. Radiation-Induced Error Mitigation by Read-Retry Technique for MLC 3-D NAND Flash Memory. United States: N. p., 2021. Web. doi:10.1109/tns.2021.3052909.
Kumari, Preeti, Surendranathan, Umeshwarnath, Wasiolek, Maryla, Hattar, Khalid, Bhat, Narayana P., & Ray, Biswajit. Radiation-Induced Error Mitigation by Read-Retry Technique for MLC 3-D NAND Flash Memory. United States. https://doi.org/10.1109/tns.2021.3052909
Kumari, Preeti, Surendranathan, Umeshwarnath, Wasiolek, Maryla, Hattar, Khalid, Bhat, Narayana P., and Ray, Biswajit. Tue . "Radiation-Induced Error Mitigation by Read-Retry Technique for MLC 3-D NAND Flash Memory". United States. https://doi.org/10.1109/tns.2021.3052909. https://www.osti.gov/servlets/purl/1787509.
@article{osti_1787509,
title = {Radiation-Induced Error Mitigation by Read-Retry Technique for MLC 3-D NAND Flash Memory},
author = {Kumari, Preeti and Surendranathan, Umeshwarnath and Wasiolek, Maryla and Hattar, Khalid and Bhat, Narayana P. and Ray, Biswajit},
abstractNote = {Here, we have evaluated the Read-Retry (RR) functionality of the 3-D NAND chip of multilevel-cell (MLC) configuration after total ionization dose (TID) exposure. The RR function is typically offered in the high-density state-of-the-art NAND memory chips to recover data once the default memory read method fails to correct data with error correction codes (ECCs). In this work, we have applied the RR method on the irradiated 3-D NAND chip that was exposed with a Co-60 gamma-ray source for TID up to 50 krad (Si). Based on our experimental evaluation results, we have proposed an algorithm to efficiently implement the RR method to extend the radiation tolerance of the NAND memory chip. Our experimental evaluation shows that the RR method coupled with ECC can ensure data integrity of MLC 3-D NAND for TID up to 50 krad (Si).},
doi = {10.1109/tns.2021.3052909},
journal = {IEEE Transactions on Nuclear Science},
number = 5,
volume = 68,
place = {United States},
year = {Tue Jan 19 00:00:00 EST 2021},
month = {Tue Jan 19 00:00:00 EST 2021}
}