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Title: Analytical Bit-Error Model of NAND Flash Memories for Dosimetry Application

Abstract

In this work, we provide an analytical model for the total ionizing dose (TID) effects on the bit error statistics of commercial flash memory chips. We have validated the model with experimental data collected by irradiating several commercial NAND flash memory chips from different technology nodes. We find that our analytical model can project bit errors at higher TID values (~ 20 krad(Si)) from measured data at lower TID values (<1 krad(Si)). Based on our model and the measured data, we have formulated basic design rules for using a commercial flash memory chip as a dosimeter. We discuss the impact of NAND chip-to-chip variability, noise margin and the intrinsic errors on the dosimeter design using detailed experimentation.

Authors:
 [1];  [1];  [2];  [2];  [1];  [1]
+ Show Author Affiliations
  1. Univ. of Alabama, Huntsville, AL (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Nuclear Energy (NE); USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF)
OSTI Identifier:
1830527
Report Number(s):
SAND-2021-14212J
Journal ID: ISSN 0018-9499; 701484; TRN: US2216504
Grant/Contract Number:  
NA0003525; AC07-051D14517; 1929099
Resource Type:
Accepted Manuscript
Journal Name:
IEEE Transactions on Nuclear Science
Additional Journal Information:
Journal Volume: 69; Journal Issue: 3; Journal ID: ISSN 0018-9499
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
73 NUCLEAR PHYSICS AND RADIATION PHYSICS; ionizing radiation; 3-D NAND; multi-level-cell; read retry

Citation Formats

Kumari, Preeti, Surendranathan, Umeshwarnath, Wasiolek, Maryla, Hattar, Khalid, Bhat, Narayana, and Ray, Biswajit. Analytical Bit-Error Model of NAND Flash Memories for Dosimetry Application. United States: N. p., 2021. Web. doi:10.1109/tns.2021.3125652.
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Kumari, Preeti, Surendranathan, Umeshwarnath, Wasiolek, Maryla, Hattar, Khalid, Bhat, Narayana, & Ray, Biswajit. Analytical Bit-Error Model of NAND Flash Memories for Dosimetry Application. United States. https://doi.org/10.1109/tns.2021.3125652
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Kumari, Preeti, Surendranathan, Umeshwarnath, Wasiolek, Maryla, Hattar, Khalid, Bhat, Narayana, and Ray, Biswajit. Sat . "Analytical Bit-Error Model of NAND Flash Memories for Dosimetry Application". United States. https://doi.org/10.1109/tns.2021.3125652. https://www.osti.gov/servlets/purl/1830527.
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@article{osti_1830527,
title = {Analytical Bit-Error Model of NAND Flash Memories for Dosimetry Application},
author = {Kumari, Preeti and Surendranathan, Umeshwarnath and Wasiolek, Maryla and Hattar, Khalid and Bhat, Narayana and Ray, Biswajit},
abstractNote = {In this work, we provide an analytical model for the total ionizing dose (TID) effects on the bit error statistics of commercial flash memory chips. We have validated the model with experimental data collected by irradiating several commercial NAND flash memory chips from different technology nodes. We find that our analytical model can project bit errors at higher TID values (~ 20 krad(Si)) from measured data at lower TID values (<1 krad(Si)). Based on our model and the measured data, we have formulated basic design rules for using a commercial flash memory chip as a dosimeter. We discuss the impact of NAND chip-to-chip variability, noise margin and the intrinsic errors on the dosimeter design using detailed experimentation.},
doi = {10.1109/tns.2021.3125652},
journal = {IEEE Transactions on Nuclear Science},
number = 3,
volume = 69,
place = {United States},
year = {Sat Nov 13 00:00:00 EST 2021},
month = {Sat Nov 13 00:00:00 EST 2021}
}
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https://doi.org/10.1109/tns.2021.3125652
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