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Title: Fast flexible electronics with strained silicon nanomembranes

Abstract

Fast flexible electronics operating at radio frequencies (.1 GHz) are more attractive than traditional flexible electronics because of their versatile capabilities, dramatic power savings when operating at reduced speed and broader spectrum of applications. Transferrable single-crystalline Si nanomembranes (SiNMs) are preferred to other materials for flexible electronics owing to their unique advantages. Further improvement of Si-based device speed implies significant technical and economic advantages. While the mobility of bulk Si can be enhanced using strain techniques, implementing these techniques into transferrable single-crystalline SiNMs has been challenging and not demonstrated. The past approach presents severe challenges to achieve effective doping and desired material topology. Here we demonstrate the combination of strained- NM-compatible doping techniques with self-sustained-strain sharing by applying a strain-sharing scheme between Si and SiGe multiple epitaxial layers, to create strained print-transferrable SiNMs. We demonstrate a new speed record of Si-based flexible electronics without using aggressively scaled critical device dimensions.

Authors:
 [1];  [1];  [2];  [2];  [3];  [2];  [4];  [2];  [1]
+ Show Author Affiliations
  1. Univ. of Wisconsin, Madison, WI (United States). Dept. of Electrical and Computer Engineering
  2. Univ. of Wisconsin, Madison, WI (United States). Dept. of Materials Science and Engineering
  3. Rutgers Univ., Piscataway, NJ (United States). Dept. of Materials Science and Engineering. Inst. for Advanced materials, Devices and Nanotechnology (IAMDN)
  4. Univ. of Texas, Arlington, TX (United States). NanoFAB Center. Dept. of Electrical Engineering
Publication Date:
Research Org.:
Univ. of Wisconsin, Madison, WI (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1624591
Grant/Contract Number:  
FG02-03ER46028
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 3; Journal Issue: 1; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Science & Technology - Other Topics; ELECTRICAL AND ELECTRONIC ENGINEERING; ELECTRONIC DEVICES; APPLIED PHYSICS; ELECTRONIC PROPERTIES AND MATERIALS

Citation Formats

Zhou, Han, Seo, Jung-Hun, Paskiewicz, Deborah M., Zhu, Ye, Celler, George K., Voyles, Paul M., Zhou, Weidong, Lagally, Max G., and Ma, Zhenqiang. Fast flexible electronics with strained silicon nanomembranes. United States: N. p., 2013. Web. doi:10.1038/srep01291.
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Zhou, Han, Seo, Jung-Hun, Paskiewicz, Deborah M., Zhu, Ye, Celler, George K., Voyles, Paul M., Zhou, Weidong, Lagally, Max G., & Ma, Zhenqiang. Fast flexible electronics with strained silicon nanomembranes. United States. https://doi.org/10.1038/srep01291
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Zhou, Han, Seo, Jung-Hun, Paskiewicz, Deborah M., Zhu, Ye, Celler, George K., Voyles, Paul M., Zhou, Weidong, Lagally, Max G., and Ma, Zhenqiang. Mon . "Fast flexible electronics with strained silicon nanomembranes". United States. https://doi.org/10.1038/srep01291. https://www.osti.gov/servlets/purl/1624591.
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@article{osti_1624591,
title = {Fast flexible electronics with strained silicon nanomembranes},
author = {Zhou, Han and Seo, Jung-Hun and Paskiewicz, Deborah M. and Zhu, Ye and Celler, George K. and Voyles, Paul M. and Zhou, Weidong and Lagally, Max G. and Ma, Zhenqiang},
abstractNote = {Fast flexible electronics operating at radio frequencies (.1 GHz) are more attractive than traditional flexible electronics because of their versatile capabilities, dramatic power savings when operating at reduced speed and broader spectrum of applications. Transferrable single-crystalline Si nanomembranes (SiNMs) are preferred to other materials for flexible electronics owing to their unique advantages. Further improvement of Si-based device speed implies significant technical and economic advantages. While the mobility of bulk Si can be enhanced using strain techniques, implementing these techniques into transferrable single-crystalline SiNMs has been challenging and not demonstrated. The past approach presents severe challenges to achieve effective doping and desired material topology. Here we demonstrate the combination of strained- NM-compatible doping techniques with self-sustained-strain sharing by applying a strain-sharing scheme between Si and SiGe multiple epitaxial layers, to create strained print-transferrable SiNMs. We demonstrate a new speed record of Si-based flexible electronics without using aggressively scaled critical device dimensions.},
doi = {10.1038/srep01291},
journal = {Scientific Reports},
number = 1,
volume = 3,
place = {United States},
year = {Mon Feb 18 00:00:00 EST 2013},
month = {Mon Feb 18 00:00:00 EST 2013}
}
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https://doi.org/10.1038/srep01291
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