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Title: Nanomembrane-based materials for Group IV semiconductor quantum electronics

Abstract

Strained-silicon/relaxed-silicon-germanium alloy (strained-Si/SiGe) heterostructures are the foundation of Group IV-element quantum electronics and quantum computation, but current materials quality limits the reliability and thus the achievable performance of devices. In comparison to conventional approaches, single-crystal SiGe nanomembranes are a promising alternative as substrates for the epitaxial growth of these heterostructures. Because the nanomembrane is truly a single crystal, in contrast to the conventional SiGe substrate made by compositionally grading SiGe grown on bulk Si, significant improvements in quantum electronic-device reliability may be expected with nanomembrane substrates. We compare lateral strain inhomogeneities and the local mosaic structure (crystalline tilt) in strained-Si/SiGe heterostructures that we grow on SiGe nanomembranes and on compositionally graded SiGe substrates, with micro-Raman mapping and nanodiffraction, respectively. Significant structural improvements are found using SiGe nanomembranes.

Authors:
 [1];  [1];  [2];  [1];  [1]
+ Show Author Affiliations
  1. Univ. of Wisconsin, Madison, WI (United States). Dept. of Materials Science and Engineering
  2. Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials
Publication Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL (United States); Univ. of Wisconsin, Madison, WI (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
OSTI Identifier:
1624694
Grant/Contract Number:  
AC02-06CH11357; FG02-03ER46028
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 4; Journal Issue: 1; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; 77 NANOSCIENCE AND NANOTECHNOLOGY; Science & Technology - Other Topics; ELECTRONIC DEVICES; STRUCTURAL PROPERTIES; NANOSCALE MATERIALS

Citation Formats

Paskiewicz, D. M., Savage, D. E., Holt, M. V., Evans, P. G., and Lagally, M. G. Nanomembrane-based materials for Group IV semiconductor quantum electronics. United States: N. p., 2014. Web. doi:10.1038/srep04218.
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Paskiewicz, D. M., Savage, D. E., Holt, M. V., Evans, P. G., & Lagally, M. G. Nanomembrane-based materials for Group IV semiconductor quantum electronics. United States. https://doi.org/10.1038/srep04218
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Paskiewicz, D. M., Savage, D. E., Holt, M. V., Evans, P. G., and Lagally, M. G. Thu . "Nanomembrane-based materials for Group IV semiconductor quantum electronics". United States. https://doi.org/10.1038/srep04218. https://www.osti.gov/servlets/purl/1624694.
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@article{osti_1624694,
title = {Nanomembrane-based materials for Group IV semiconductor quantum electronics},
author = {Paskiewicz, D. M. and Savage, D. E. and Holt, M. V. and Evans, P. G. and Lagally, M. G.},
abstractNote = {Strained-silicon/relaxed-silicon-germanium alloy (strained-Si/SiGe) heterostructures are the foundation of Group IV-element quantum electronics and quantum computation, but current materials quality limits the reliability and thus the achievable performance of devices. In comparison to conventional approaches, single-crystal SiGe nanomembranes are a promising alternative as substrates for the epitaxial growth of these heterostructures. Because the nanomembrane is truly a single crystal, in contrast to the conventional SiGe substrate made by compositionally grading SiGe grown on bulk Si, significant improvements in quantum electronic-device reliability may be expected with nanomembrane substrates. We compare lateral strain inhomogeneities and the local mosaic structure (crystalline tilt) in strained-Si/SiGe heterostructures that we grow on SiGe nanomembranes and on compositionally graded SiGe substrates, with micro-Raman mapping and nanodiffraction, respectively. Significant structural improvements are found using SiGe nanomembranes.},
doi = {10.1038/srep04218},
journal = {Scientific Reports},
number = 1,
volume = 4,
place = {United States},
year = {Thu Feb 27 00:00:00 EST 2014},
month = {Thu Feb 27 00:00:00 EST 2014}
}
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https://doi.org/10.1038/srep04218
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Works referenced in this record:

Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors
journal, May 2007

  • Sun, Y.; Thompson, S. E.; Nishida, T.
  • Journal of Applied Physics, Vol. 101, Issue 10
  • DOI: 10.1063/1.2730561

Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs
journal, August 2009

Fast flexible electronics with strained silicon nanomembranes
journal, February 2013

  • Zhou, Han; Seo, Jung-Hun; Paskiewicz, Deborah M.
  • Scientific Reports, Vol. 3, Article No. 1291
  • DOI: 10.1038/srep01291

Practical design and simulation of silicon-based quantum-dot qubits
journal, March 2003

Direct-bandgap light-emitting germanium in tensilely strained nanomembranes
journal, November 2011

  • Sanchez-Perez, J. R.; Boztug, C.; Chen, F.
  • Proceedings of the National Academy of Sciences, Vol. 108, Issue 47, p. 18893-18898
  • DOI: 10.1073/pnas.1107968108

Strain Tuning of Ferroelectric Thin Films
journal, August 2007

Room-temperature ferroelectricity in strained SrTiO3
journal, August 2004

  • Haeni, J. H.; Irvin, P.; Chang, W.
  • Nature, Vol. 430, Issue 7001, p. 758-761
  • DOI: 10.1038/nature02773

Controllable valley splitting in silicon quantum devices
journal, December 2006

  • Goswami, Srijit; Slinker, K. A.; Friesen, Mark
  • Nature Physics, Vol. 3, Issue 1
  • DOI: 10.1038/nphys475

A silicon-based nuclear spin quantum computer
journal, May 1998

Defect-Free Single-Crystal SiGe: A New Material from Nanomembrane Strain Engineering
journal, July 2011

  • Paskiewicz, Deborah M.; Tanto, Boy; Savage, Donald E.
  • ACS Nano, Vol. 5, Issue 7, p. 5814-5822
  • DOI: 10.1021/nn201547k

Strain relaxation and dislocations in SiGe/Si structures
journal, November 1996

In-plane strain fluctuation in strained-Si/SiGe heterostructures
journal, November 2003

  • Sawano, K.; Koh, S.; Shiraki, Y.
  • Applied Physics Letters, Vol. 83, Issue 21
  • DOI: 10.1063/1.1629142

Observation of local tilted regions in strain-relaxed SiGe/Si buffer layers using x-ray microdiffraction
journal, February 1999

  • Mooney, P. M.; Jordan-Sweet, J. L.; Noyan, I. C.
  • Applied Physics Letters, Vol. 74, Issue 5
  • DOI: 10.1063/1.123104

Nanoscale Distortions of Si Quantum Wells in Si/SiGe Quantum-Electronic Heterostructures
journal, July 2012

  • Evans, P. G.; Savage, D. E.; Prance, J. R.
  • Advanced Materials, Vol. 24, Issue 38
  • DOI: 10.1002/adma.201201833

Elastically strain-sharing nanomembranes: flexible and transferable strained silicon and silicon–germanium alloys
journal, February 2007

Synthesis, assembly and applications of semiconductor nanomembranes
journal, September 2011

  • Rogers, J. A.; Lagally, M. G.; Nuzzo, R. G.
  • Nature, Vol. 477, Issue 7362, p. 45-53
  • DOI: 10.1038/nature10381

Phonon strain shift coefficients in Si1−xGex alloys
journal, May 2008

  • Pezzoli, F.; Bonera, E.; Grilli, E.
  • Journal of Applied Physics, Vol. 103, Issue 9
  • DOI: 10.1063/1.2913052

Raman investigation of strain in Si∕SiGe heterostructures: Precise determination of the strain-shift coefficient of Si bands
journal, March 2006

  • Nakashima, S.; Mitani, T.; Ninomiya, M.
  • Journal of Applied Physics, Vol. 99, Issue 5
  • DOI: 10.1063/1.2178396

Thin Film Materials
book, July 2010

Si/Ge Junctions Formed by Nanomembrane Bonding
journal, February 2011

  • Kiefer, Arnold M.; Paskiewicz, Deborah M.; Clausen, Anna M.
  • ACS Nano, Vol. 5, Issue 2, p. 1179-1189
  • DOI: 10.1021/nn103149c

Micro-Raman spectroscopy to study local mechanical stress in silicon integrated circuits
journal, February 1996

Raman spectroscopy of Si1−xGex epilayers
journal, December 2005

Nanoscale Hard X-Ray Microscopy Methods for Materials Studies
journal, July 2013

Defect-Free Single-Crystal SiGe: A New Material from Nanomembrane Strain Engineering
journal, July 2011

  • Paskiewicz, Deborah M.; Tanto, Boy; Savage, Donald E.
  • ACS Nano, Vol. 5, Issue 7, p. 5814-5822
  • DOI: 10.1021/nn201547k

Room-temperature ferroelectricity in strained SrTiO3
journal, August 2004

  • Haeni, J. H.; Irvin, P.; Chang, W.
  • Nature, Vol. 430, Issue 7001, p. 758-761
  • DOI: 10.1038/nature02773

Synthesis, assembly and applications of semiconductor nanomembranes
journal, September 2011

  • Rogers, J. A.; Lagally, M. G.; Nuzzo, R. G.
  • Nature, Vol. 477, Issue 7362, p. 45-53
  • DOI: 10.1038/nature10381

Fast flexible electronics with strained silicon nanomembranes
journal, February 2013

  • Zhou, Han; Seo, Jung-Hun; Paskiewicz, Deborah M.
  • Scientific Reports, Vol. 3, Article No. 1291
  • DOI: 10.1038/srep01291

In-plane strain fluctuation in strained-Si/SiGe heterostructures
journal, November 2003

  • Sawano, K.; Koh, S.; Shiraki, Y.
  • Applied Physics Letters, Vol. 83, Issue 21
  • DOI: 10.1063/1.1629142

Silicon Nanomembranes
journal, January 2007

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    Works referencing / citing this record:

    Stressor-layer-induced elastic strain sharing in SrTiO 3 complex oxide sheets
    journal, February 2018

    • Tilka, J. A.; Park, J.; Ahn, Y.
    • Applied Physics Letters, Vol. 112, Issue 9
    • DOI: 10.1063/1.5019920
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