Fabrication of flat SiGe heterostructure nanomembrane windows via strain-relief patterning
Abstract
The lattice mismatch between SiGe and Si in heteroepitaxial Si/SiGe/Si trilayers leads to buckling when confined nanomembrane windows formed from these heterostructures are released from silicon-on-insulator substrates. We demonstrate that large areas in which the curvature and curvature-induced strain are reduced by an order of magnitude can be produced by patterning the windows to concentrate buckling in narrow arms with low flexural rigidity supporting a flat central region. Synchrotron x-ray thermal diffuse scattering shows that the improved flatness of patterned windows permits fundamental studies with fidelity similar to what can be achieved with flat single-component Si nanomembranes.
- Authors:
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); US Air Force Office of Scientific Research (AFOSR)
- OSTI Identifier:
- 1238073
- DOE Contract Number:
- AC02-06CH11357
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Physics. D, Applied Physics
- Additional Journal Information:
- Journal Volume: 48; Journal Issue: 1; Journal ID: ISSN 0022-3727
- Publisher:
- IOP Publishing
- Country of Publication:
- United States
- Language:
- English
- Subject:
- buckling; nanomembrane; silicon; silicon–germanium; strain
Citation Formats
McElhinny, K. M., Gopalakrishnan, G, Savage, D E, Silva-Martinez, Juan C., Lagally, M. G., Holt, M. V., and Evans, P. G. Fabrication of flat SiGe heterostructure nanomembrane windows via strain-relief patterning. United States: N. p., 2015.
Web. doi:10.1088/0022-3727/48/1/015306.
McElhinny, K. M., Gopalakrishnan, G, Savage, D E, Silva-Martinez, Juan C., Lagally, M. G., Holt, M. V., & Evans, P. G. Fabrication of flat SiGe heterostructure nanomembrane windows via strain-relief patterning. United States. https://doi.org/10.1088/0022-3727/48/1/015306
McElhinny, K. M., Gopalakrishnan, G, Savage, D E, Silva-Martinez, Juan C., Lagally, M. G., Holt, M. V., and Evans, P. G. 2015.
"Fabrication of flat SiGe heterostructure nanomembrane windows via strain-relief patterning". United States. https://doi.org/10.1088/0022-3727/48/1/015306.
@article{osti_1238073,
title = {Fabrication of flat SiGe heterostructure nanomembrane windows via strain-relief patterning},
author = {McElhinny, K. M. and Gopalakrishnan, G and Savage, D E and Silva-Martinez, Juan C. and Lagally, M. G. and Holt, M. V. and Evans, P. G.},
abstractNote = {The lattice mismatch between SiGe and Si in heteroepitaxial Si/SiGe/Si trilayers leads to buckling when confined nanomembrane windows formed from these heterostructures are released from silicon-on-insulator substrates. We demonstrate that large areas in which the curvature and curvature-induced strain are reduced by an order of magnitude can be produced by patterning the windows to concentrate buckling in narrow arms with low flexural rigidity supporting a flat central region. Synchrotron x-ray thermal diffuse scattering shows that the improved flatness of patterned windows permits fundamental studies with fidelity similar to what can be achieved with flat single-component Si nanomembranes.},
doi = {10.1088/0022-3727/48/1/015306},
url = {https://www.osti.gov/biblio/1238073},
journal = {Journal of Physics. D, Applied Physics},
issn = {0022-3727},
number = 1,
volume = 48,
place = {United States},
year = {Wed Jan 14 00:00:00 EST 2015},
month = {Wed Jan 14 00:00:00 EST 2015}
}
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