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Title: Fabrication of flat SiGe heterostructure nanomembrane windows via strain-relief patterning

Abstract

The lattice mismatch between SiGe and Si in heteroepitaxial Si/SiGe/Si trilayers leads to buckling when confined nanomembrane windows formed from these heterostructures are released from silicon-on-insulator substrates. We demonstrate that large areas in which the curvature and curvature-induced strain are reduced by an order of magnitude can be produced by patterning the windows to concentrate buckling in narrow arms with low flexural rigidity supporting a flat central region. Synchrotron x-ray thermal diffuse scattering shows that the improved flatness of patterned windows permits fundamental studies with fidelity similar to what can be achieved with flat single-component Si nanomembranes.

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); US Air Force Office of Scientific Research (AFOSR)
OSTI Identifier:
1238073
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article
Journal Name:
Journal of Physics. D, Applied Physics
Additional Journal Information:
Journal Volume: 48; Journal Issue: 1; Journal ID: ISSN 0022-3727
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
buckling; nanomembrane; silicon; silicon–germanium; strain

Citation Formats

McElhinny, K. M., Gopalakrishnan, G, Savage, D E, Silva-Martinez, Juan C., Lagally, M. G., Holt, M. V., and Evans, P. G. Fabrication of flat SiGe heterostructure nanomembrane windows via strain-relief patterning. United States: N. p., 2015. Web. doi:10.1088/0022-3727/48/1/015306.
McElhinny, K. M., Gopalakrishnan, G, Savage, D E, Silva-Martinez, Juan C., Lagally, M. G., Holt, M. V., & Evans, P. G. Fabrication of flat SiGe heterostructure nanomembrane windows via strain-relief patterning. United States. https://doi.org/10.1088/0022-3727/48/1/015306
McElhinny, K. M., Gopalakrishnan, G, Savage, D E, Silva-Martinez, Juan C., Lagally, M. G., Holt, M. V., and Evans, P. G. 2015. "Fabrication of flat SiGe heterostructure nanomembrane windows via strain-relief patterning". United States. https://doi.org/10.1088/0022-3727/48/1/015306.
@article{osti_1238073,
title = {Fabrication of flat SiGe heterostructure nanomembrane windows via strain-relief patterning},
author = {McElhinny, K. M. and Gopalakrishnan, G and Savage, D E and Silva-Martinez, Juan C. and Lagally, M. G. and Holt, M. V. and Evans, P. G.},
abstractNote = {The lattice mismatch between SiGe and Si in heteroepitaxial Si/SiGe/Si trilayers leads to buckling when confined nanomembrane windows formed from these heterostructures are released from silicon-on-insulator substrates. We demonstrate that large areas in which the curvature and curvature-induced strain are reduced by an order of magnitude can be produced by patterning the windows to concentrate buckling in narrow arms with low flexural rigidity supporting a flat central region. Synchrotron x-ray thermal diffuse scattering shows that the improved flatness of patterned windows permits fundamental studies with fidelity similar to what can be achieved with flat single-component Si nanomembranes.},
doi = {10.1088/0022-3727/48/1/015306},
url = {https://www.osti.gov/biblio/1238073}, journal = {Journal of Physics. D, Applied Physics},
issn = {0022-3727},
number = 1,
volume = 48,
place = {United States},
year = {2015},
month = {1}
}