Optical Properties of Tensilely Strained Ge Nanomembranes
Abstract
Group-IV semiconductors, which provide the leading materials platform of micro- electronics, are generally unsuitable for light emitting device applications because of their indirect- bandgap nature. This property currently limits the large-scale integration of electronic and photonic functionalities on Si chips. The introduction of tensile strain in Ge, which has the effect of lowering the direct conduction-band minimum relative to the indirect valleys, is a promising approach to address this challenge. Here we review recent work focused on the basic science and technology of mechanically stressed Ge nanomembranes, i.e., single-crystal sheets with thicknesses of a few tens of nanometers, which can sustain particularly large strain levels before the onset of plastic deformation. These nanomaterials have been employed to demonstrate large strain-enhanced photoluminescence, population inversion under optical pumping, and the formation of direct-bandgap Ge. Furthermore, Si-based photonic-crystal cavities have been developed that can be combined with these Ge nanomembranes without limiting their mechanical flexibility. These results highlight the potential of strained Ge as a CMOS-compatible laser material, and more in general the promise of nanomembrane strain engineering for novel device technologies.
- Authors:
-
[1];
- Boston Univ., Boston, MA (United States). Dept. of Electrical and Computer Engineering and Photonics Center
- Univ. of Wisconsin, Madison, WI (United States). Dept. of Materials Science and Engineering
- Publication Date:
- Research Org.:
- Univ. of Wisconsin, Madison, WI (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1511044
- Grant/Contract Number:
- FG02-03ER46028
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nanomaterials
- Additional Journal Information:
- Journal Volume: 8; Journal Issue: 6; Journal ID: ISSN 2079-4991
- Publisher:
- MDPI
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; nanomembranes; optical gain media; group-IV semiconductors; strain engineering
Citation Formats
Paiella, Roberto, and Lagally, Max G. Optical Properties of Tensilely Strained Ge Nanomembranes. United States: N. p., 2018.
Web. doi:10.3390/nano8060407.
Paiella, Roberto, & Lagally, Max G. Optical Properties of Tensilely Strained Ge Nanomembranes. United States. https://doi.org/10.3390/nano8060407
Paiella, Roberto, and Lagally, Max G. Wed .
"Optical Properties of Tensilely Strained Ge Nanomembranes". United States. https://doi.org/10.3390/nano8060407. https://www.osti.gov/servlets/purl/1511044.
@article{osti_1511044,
title = {Optical Properties of Tensilely Strained Ge Nanomembranes},
author = {Paiella, Roberto and Lagally, Max G.},
abstractNote = {Group-IV semiconductors, which provide the leading materials platform of micro- electronics, are generally unsuitable for light emitting device applications because of their indirect- bandgap nature. This property currently limits the large-scale integration of electronic and photonic functionalities on Si chips. The introduction of tensile strain in Ge, which has the effect of lowering the direct conduction-band minimum relative to the indirect valleys, is a promising approach to address this challenge. Here we review recent work focused on the basic science and technology of mechanically stressed Ge nanomembranes, i.e., single-crystal sheets with thicknesses of a few tens of nanometers, which can sustain particularly large strain levels before the onset of plastic deformation. These nanomaterials have been employed to demonstrate large strain-enhanced photoluminescence, population inversion under optical pumping, and the formation of direct-bandgap Ge. Furthermore, Si-based photonic-crystal cavities have been developed that can be combined with these Ge nanomembranes without limiting their mechanical flexibility. These results highlight the potential of strained Ge as a CMOS-compatible laser material, and more in general the promise of nanomembrane strain engineering for novel device technologies.},
doi = {10.3390/nano8060407},
journal = {Nanomaterials},
number = 6,
volume = 8,
place = {United States},
year = {Wed Jun 06 00:00:00 EDT 2018},
month = {Wed Jun 06 00:00:00 EDT 2018}
}
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