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Title: Silicon Nanomembranes with Hybrid Crystal Orientations and Strain States

Abstract

Methods to integrate different crystal orientations, strain states, and compositions of semiconductors in planar and preferably flexible configurations may enable nontraditional sensing-, stimulating-, or communication-device applications. Here, we combine crystalline-silicon nanomembranes, patterning, membrane transfer, and epitaxial growth to demonstrate planar arrays of different orientations and strain states of Si in a single membrane, which is then readily transferable to other substrates, including flexible supports. As examples, regions of Si(001) and Si(110) or strained Si(110) are combined to form a multicomponent, single substrate with high-quality narrow interfaces. We perform extensive structural characterization of all interfaces and measure charge-carrier mobilities in different regions of a 2D quilt. The method is readily extendable to include varying compositions or different classes of materials.

Authors:
ORCiD logo [1];  [2];  [3];  [4];  [5];  [6];  [6];  [1];  [1];  [1]
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  1. Univ. of Wisconsin, Madison, WI (United States)
  2. National Center for Research in Energy and Materials (CNPEM), Campinas (Brazil). National Lab. of Nanotechnology; Leibniz Inst. for Solid State and Materials Research (IFW), Dresden (Germany); Univ. of Campinas (UNICAMP), Sao Paulo (Brazil). Inst. of Physics Gleb Wataghin (IPGW)
  3. Univ. of Wisconsin, Madison, WI (United States); Motorola Solutions, Inc., Chicago, IL (United States)
  4. Univ. of Wisconsin, Madison, WI (United States); Intel Corp., Hillsboro, OR (United States)
  5. Federal Univ. of Minas Gerais, Belo Horizonte (Brazil)
  6. Leibniz Inst. for Solid State and Materials Research (IFW), Dresden (Germany)
Publication Date:
Research Org.:
Univ. of Wisconsin, Madison, WI (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); First Foundation, Greenland, AK (New Zealand); USDOD National Defense Science and Engineering Graduate (NDSEG) Fellowship; Sao Paulo Research Foundation (FAPESP) (Brazil); National Council for Scientific and Technological Development (CNPq) (Brazil)
Contributing Org.:
National Center for Research in Energy and Materials (CNPEM), Sao Paulo (Brazil). National Lab. of Light Synchrotron (LNLS)
OSTI Identifier:
1460105
Grant/Contract Number:  
FG02-03ER46028; DMR-1121288; 2016/14001-7; 423962/2016-7
Resource Type:
Accepted Manuscript
Journal Name:
ACS Applied Materials and Interfaces
Additional Journal Information:
Journal Volume: 9; Journal Issue: 48; Journal ID: ISSN 1944-8244
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; epitaxy; hybrid crystalline materials; interfaces; selective growth; silicon nanomembranes; strain engineering

Citation Formats

Scott, Shelley A., Deneke, Christoph, Paskiewicz, Deborah M., Ryu, Hyuk Ju, Malachias, Angelo, Baunack, Stefan, Schmidt, Oliver G., Savage, Donald E., Eriksson, Mark A., and Lagally, Max G. Silicon Nanomembranes with Hybrid Crystal Orientations and Strain States. United States: N. p., 2017. Web. doi:10.1021/acsami.7b14291.
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Scott, Shelley A., Deneke, Christoph, Paskiewicz, Deborah M., Ryu, Hyuk Ju, Malachias, Angelo, Baunack, Stefan, Schmidt, Oliver G., Savage, Donald E., Eriksson, Mark A., & Lagally, Max G. Silicon Nanomembranes with Hybrid Crystal Orientations and Strain States. United States. https://doi.org/10.1021/acsami.7b14291
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Scott, Shelley A., Deneke, Christoph, Paskiewicz, Deborah M., Ryu, Hyuk Ju, Malachias, Angelo, Baunack, Stefan, Schmidt, Oliver G., Savage, Donald E., Eriksson, Mark A., and Lagally, Max G. Sat . "Silicon Nanomembranes with Hybrid Crystal Orientations and Strain States". United States. https://doi.org/10.1021/acsami.7b14291. https://www.osti.gov/servlets/purl/1460105.
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@article{osti_1460105,
title = {Silicon Nanomembranes with Hybrid Crystal Orientations and Strain States},
author = {Scott, Shelley A. and Deneke, Christoph and Paskiewicz, Deborah M. and Ryu, Hyuk Ju and Malachias, Angelo and Baunack, Stefan and Schmidt, Oliver G. and Savage, Donald E. and Eriksson, Mark A. and Lagally, Max G.},
abstractNote = {Methods to integrate different crystal orientations, strain states, and compositions of semiconductors in planar and preferably flexible configurations may enable nontraditional sensing-, stimulating-, or communication-device applications. Here, we combine crystalline-silicon nanomembranes, patterning, membrane transfer, and epitaxial growth to demonstrate planar arrays of different orientations and strain states of Si in a single membrane, which is then readily transferable to other substrates, including flexible supports. As examples, regions of Si(001) and Si(110) or strained Si(110) are combined to form a multicomponent, single substrate with high-quality narrow interfaces. We perform extensive structural characterization of all interfaces and measure charge-carrier mobilities in different regions of a 2D quilt. The method is readily extendable to include varying compositions or different classes of materials.},
doi = {10.1021/acsami.7b14291},
journal = {ACS Applied Materials and Interfaces},
number = 48,
volume = 9,
place = {United States},
year = {Sat Nov 11 00:00:00 EST 2017},
month = {Sat Nov 11 00:00:00 EST 2017}
}
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https://doi.org/10.1021/acsami.7b14291
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    Works referencing / citing this record:

    In-place bonded semiconductor membranes as compliant substrates for III–V compound devices
    journal, January 2019

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    • Nanoscale, Vol. 11, Issue 8
    • DOI: 10.1039/c8nr08727j
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