Radiation defect dynamics in GaAs studied by pulsed ion beams

Bayu Aji, L. B.; Wallace, J. B.; Kucheyev, S. O.

doi:10.1063/1.5038018

Title: Radiation defect dynamics in GaAs studied by pulsed ion beams

Abstract

Gallium arsenide under ion bombardment at room temperature and above exhibits pronounced dynamic annealing that remains poorly understood. Here, we use a pulsed beam method to study radiation defect dynamics in GaAs in the temperature range of 20–100 °C irradiated with 500 keV Xe ions. Results show that, with increasing temperature, the defect relaxation time constant monotonically decreases from ~5.2 to ~0.4 ms. A change in the dominant dynamic annealing process occurs at a critical temperature of ~60 °C, as evidenced by a change in the activation energy. A comparison with the other semiconductors studied by the pulsed beam method (Si, Ge, and 4H-SiC) reveals that both the high-temperature activation energy and the temperature below which dynamic annealing becomes negligible scale with the melting point.

Authors:

^[1]; Wallace, J. B. ^[2]; Kucheyev, S. O. ^[1]

Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Texas A & M Univ., College Station, TX (United States). Dept. of Nuclear Engineering

Publication Date:: Sat Jul 14 00:00:00 EDT 2018

Research Org.:: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1488820

Alternate Identifier(s):: OSTI ID: 1459479

Report Number(s):: LLNL-JRNL-749651
Journal ID: ISSN 0021-8979; 934897

Grant/Contract Number:: AC52-07NA27344

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 124; Journal Issue: 2; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 73 NUCLEAR PHYSICS AND RADIATION PHYSICS; 36 MATERIALS SCIENCE; Military science

Citation Formats


                    Bayu Aji, L. B., Wallace, J. B., and Kucheyev, S. O. Radiation defect dynamics in GaAs studied by pulsed ion beams.  United States: N. p., 2018. 
Web.  doi:10.1063/1.5038018.

Copy to clipboard


                    Bayu Aji, L. B., Wallace, J. B., & Kucheyev, S. O. Radiation defect dynamics in GaAs studied by pulsed ion beams.  United States.  https://doi.org/10.1063/1.5038018

Copy to clipboard


                    Bayu Aji, L. B., Wallace, J. B., and Kucheyev, S. O. Sat .  
"Radiation defect dynamics in GaAs studied by pulsed ion beams".  United States.  https://doi.org/10.1063/1.5038018.  https://www.osti.gov/servlets/purl/1488820.

Copy to clipboard


                    
@article{osti_1488820,

  title        = {Radiation defect dynamics in GaAs studied by pulsed ion beams},

  author       = {Bayu Aji, L. B. and Wallace, J. B. and Kucheyev, S. O.},

  abstractNote = {Gallium arsenide under ion bombardment at room temperature and above exhibits pronounced dynamic annealing that remains poorly understood. Here, we use a pulsed beam method to study radiation defect dynamics in GaAs in the temperature range of 20–100 °C irradiated with 500 keV Xe ions. Results show that, with increasing temperature, the defect relaxation time constant monotonically decreases from ~5.2 to ~0.4 ms. A change in the dominant dynamic annealing process occurs at a critical temperature of ~60 °C, as evidenced by a change in the activation energy. A comparison with the other semiconductors studied by the pulsed beam method (Si, Ge, and 4H-SiC) reveals that both the high-temperature activation energy and the temperature below which dynamic annealing becomes negligible scale with the melting point.},

  doi          = {10.1063/1.5038018},

  journal      = {Journal of Applied Physics},

  number       = 2,

  volume       = 124,

  place        = {United States},

  year         = {Sat Jul 14 00:00:00 EDT 2018},

  month        = {Sat Jul 14 00:00:00 EDT 2018}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (Publisher)

Accepted Manuscript (DOE)

Publisher's Version of Record

https://doi.org/10.1063/1.5038018

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 4 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Crystalline-to-amorphous phase transformation in ion-irradiated GaAs
journal, September 2001

Brown, R. A.; Williams, J. S.
Physical Review B, Vol. 64, Issue 15
DOI: 10.1103/PhysRevB.64.155202

Comparative study of implantation‐induced damage in GaAs and Ge: Temperature and flux dependence
journal, July 1991

Haynes, T. E.; Holland, O. W.
Applied Physics Letters, Vol. 59, Issue 4
DOI: 10.1063/1.105460

Pulsed ion beam measurement of defect diffusion lengths in irradiated solids
journal, March 2013

Charnvanichborikarn, S.; Myers, M. T.; Shao, L.
Journal of Physics: Condensed Matter, Vol. 25, Issue 16
DOI: 10.1088/0953-8984/25/16/162203

Radiation defect dynamics in Si at room temperature studied by pulsed ion beams
journal, October 2015

Wallace, J. B.; Charnvanichborikarn, S.; Bayu Aji, L. B.
Journal of Applied Physics, Vol. 118, Issue 13
DOI: 10.1063/1.4932209

Effects of collision cascade density on radiation defect dynamics in 3C-SiC
journal, March 2017

Bayu Aji, L. B.; Wallace, J. B.; Kucheyev, S. O.
Scientific Reports, Vol. 7, Issue 1
DOI: 10.1038/srep44703

Some new aspects for the evaluation of disorder profiles in silicon by backscattering
journal, January 1973

Schmid, K.
Radiation Effects, Vol. 17, Issue 3-4
DOI: 10.1080/00337577308232616

The role of Frenkel defect diffusion in dynamic annealing in ion-irradiated Si
journal, January 2017

Wallace, J. B.; Aji, L. B. Bayu; Martin, A. A.
Scientific Reports, Vol. 7, Issue 1
DOI: 10.1038/srep39754

A method for the solution of certain non-linear problems in least squares
journal, January 1944

Levenberg, Kenneth
Quarterly of Applied Mathematics, Vol. 2, Issue 2
DOI: 10.1090/qam/10666

Dose rate effects on damage formation in ion-implanted gallium arsenide
journal, July 1991

Haynes, T. E.; Holland, O. W.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 59-60
DOI: 10.1016/0168-583X(91)95757-5

Dose‐rate effects in GaAs investigated by discrete pulsed implantation using a focused ion beam
journal, October 1996

Musil, Christian R.; Melngailis, John; Etchin, Sergey
Journal of Applied Physics, Vol. 80, Issue 7
DOI: 10.1063/1.363323

Fractal analysis of collision cascades in pulsed-ion-beam-irradiated solids
journal, December 2017

Wallace, J. B.; Aji, L. B. Bayu; Shao, L.
Scientific Reports, Vol. 7, Issue 1
DOI: 10.1038/s41598-017-17781-5

Critical temperature and ion flux dependence of amorphization in GaAs
journal, June 1997

Brown, R. A.; Williams, J. S.
Journal of Applied Physics, Vol. 81, Issue 11
DOI: 10.1063/1.365347

Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si
journal, August 2012

Myers, M. T.; Charnvanichborikarn, S.; Shao, L.
Physical Review Letters, Vol. 109, Issue 9
DOI: 10.1103/PhysRevLett.109.095502

Dynamic annealing in Ge studied by pulsed ion beams
journal, October 2017

Wallace, J. B.; Bayu Aji, L. B.; Shao, L.
Scientific Reports, Vol. 7, Issue 1
DOI: 10.1038/s41598-017-13161-1

Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide
journal, August 2016

Bayu Aji, L. B.; Wallace, J. B.; Shao, L.
Scientific Reports, Vol. 6, Issue 1
DOI: 10.1038/srep30931

III-V compound SC for optoelectronic devices
journal, April 2009

Mokkapati, Sudha; Jagadish, Chennupati
Materials Today, Vol. 12, Issue 4
DOI: 10.1016/S1369-7021(09)70110-5

The potential of III-V semiconductors as terrestrial photovoltaic devices
journal, January 2006

Bosi, Matteo; Pelosi, Claudio
Progress in Photovoltaics: Research and Applications, Vol. 15, Issue 1
DOI: 10.1002/pip.715

Influence of the dose rate on the damage production in ion implanted GaAs
journal, November 1990

Wendler, E.; Wesch, W.; Götz, G.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 52, Issue 1
DOI: 10.1016/0168-583X(90)90601-P

Low temperature channeling measurements of ion implantation lattice disorder in GaAs ^†
journal, May 1971

Weisenberger, W. H.; Picraux, S. T.; Vook, F. L.
Radiation Effects, Vol. 9, Issue 1-2
DOI: 10.1080/00337577108242043

Flux, fluence and implantation temperature dependence of disorder produced by 40 keV N ⁺ ion irradiation of GaAs
journal, January 1980

Ahmed, N. A. G.; Christodoulides, C. E.; Carter, G.
Radiation Effects, Vol. 52, Issue 3-4
DOI: 10.1080/00337578008210034

Ion implantation of semiconductors
journal, September 1998

Williams, J. S.
Materials Science and Engineering: A, Vol. 253, Issue 1-2
DOI: 10.1016/S0921-5093(98)00705-9

Effective defect diffusion lengths in Ar-ion bombarded 3 C -SiC
journal, April 2016

Bayu Aji, L. B.; Wallace, J. B.; Shao, L.
Journal of Physics D: Applied Physics, Vol. 49, Issue 19
DOI: 10.1088/0022-3727/49/19/19LT01

Ion Implantation of Semiconductors
journal, December 1976

Brander, R. W.
Physics Bulletin, Vol. 27, Issue 12
DOI: 10.1088/0031-9112/27/12/035

Ion Implantation of Semiconductors
journal, January 1976

Stephen, J.
Electronics and Power, Vol. 22, Issue 10
DOI: 10.1049/ep.1976.0363

Similar Records in DOE PAGES and OSTI.GOV collections:

Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide

Journal Article Bayu Aji, L. B. ; Wallace, J. B. ; Shao, L. ; ... - Scientific Reports

Understanding response of solids to particle irradiation remains a major materials physics challenge. This applies even to SiC, which is a prototypical nuclear ceramic and wide-band-gap semiconductor material. The lack of predictability is largely related to the complex, dynamic nature of radiation defect formation. Here, we use a novel pulsed-ion-beam method to study dynamic annealing in 4H-SiC ion-bombarded in the temperature range of 25–250 °C. We find that, while the defect recombination efficiency shows an expected monotonic increase with increasing temperature, the defect lifetime exhibits a non-monotonic temperature dependence with a maximum at ~100 °C. This finding indicates a changemore »« less
Cited by 17
https://doi.org/10.1038/srep30931

Full Text Available
Deterministic Role of Collision Cascade Density in Radiation Defect Dynamics in Si

Journal Article Wallace, J. B. ; Aji, L. B. Bayu ; Shao, L. ; ... - Physical Review Letters

The formation of stable radiation damage in solids often proceeds via complex dynamic annealing (DA) processes, involving point defect migration and interaction. The dependence of DA on irradiation conditions remains poorly understood even for Si. Here, we use a pulsed ion beam method to study defect interaction dynamics in Si bombarded in the temperature range from ~ -30 °C to 210 °C with ions in a wide range of masses, from Ne to Xe, creating collision cascades with different densities. We demonstrate that the complexity of the influence of irradiation conditions on defect dynamics can be reduced to a deterministicmore »« less
Cited by 12
https://doi.org/10.1103/PhysRevLett.120.216101

Full Text Available
Effects of collision cascade density on radiation defect dynamics in 3C-SiC

Journal Article Bayu Aji, L. B. ; Wallace, J. B. ; Kucheyev, S. O. - Scientific Reports

Effects of the collision cascade density on radiation damage in SiC remain poorly understood. We study damage buildup and defect interaction dynamics in 3C-SiC bombarded at 100 °C with either continuous or pulsed beams of 500 keV Ne, Ar, Kr, or Xe ions. Here, we find that bombardment with heavier ions, which create denser collision cascades, results in a decrease in the dynamic annealing efficiency and an increase in both the amorphization cross-section constant and the time constant of dynamic annealing. The cascade density behavior of these parameters is non-linear and appears to be uncorrelated. Our results demonstrate clearly (andmore »« less
Cited by 21
https://doi.org/10.1038/srep44703

Full Text Available
Changes in defects in ion-bombardment-amorphized Si and GaAs layers under the action of high-power electron pulses

Journal Article Dvurechenskii, A V ; Kashnikov, B P ; Smirnov, L S - Sov. Phys. - Semicond. (Engl. Transl.); (United States)

Gallium arsenide was doped by implantation of Ar/sup +/ ions and silicon was doped by implantation of As/sup +/ or Ar/sup +/ ions. The samples were then subjected to isochronous annealing which was accompanied by bombardment with 50 or 100 keV electrons in the form of pulses of 30 or 50 nsec duration. These electrons created Frenkel pairs and facilitated modification of radiation defects so that the annealing temperature needed for the recovery of the initial properties was less after electron bombardment.(AIP)
The role of Frenkel defect diffusion in dynamic annealing in ion-irradiated Si

Journal Article Wallace, J. B. ; Aji, L. B. Bayu ; Martin, A. A. ; ... - Scientific Reports

The formation of stable radiation damage in crystalline solids often proceeds via complex dynamic annealing processes, involving migration and interaction of ballistically-generated point defects. The dominant dynamic annealing processes, however, remain unknown even for crystalline Si. Here, we use a pulsed ion beam method to study defect dynamics in Si bombarded in the temperature range from -20 to 140 °C with 500 keV Ar ions. Results reveal a defect relaxation time constant of ~10–0.2 ms, which decreases monotonically with increasing temperature. The dynamic annealing rate shows an Arrhenius dependence with two well-defined activation energies of 73 ± 5 meV andmore »« less
https://doi.org/10.1038/srep39754

Full Text Available

Similar Records

Title: Radiation defect dynamics in GaAs studied by pulsed ion beams

Abstract

Citation Formats

Crystalline-to-amorphous phase transformation in ion-irradiated GaAs journal, September 2001

Comparative study of implantation‐induced damage in GaAs and Ge: Temperature and flux dependence journal, July 1991

Pulsed ion beam measurement of defect diffusion lengths in irradiated solids journal, March 2013

Radiation defect dynamics in Si at room temperature studied by pulsed ion beams journal, October 2015

Effects of collision cascade density on radiation defect dynamics in 3C-SiC journal, March 2017

Some new aspects for the evaluation of disorder profiles in silicon by backscattering journal, January 1973

The role of Frenkel defect diffusion in dynamic annealing in ion-irradiated Si journal, January 2017

A method for the solution of certain non-linear problems in least squares journal, January 1944

Dose rate effects on damage formation in ion-implanted gallium arsenide journal, July 1991

Dose‐rate effects in GaAs investigated by discrete pulsed implantation using a focused ion beam journal, October 1996

Fractal analysis of collision cascades in pulsed-ion-beam-irradiated solids journal, December 2017

Critical temperature and ion flux dependence of amorphization in GaAs journal, June 1997

Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si journal, August 2012

Dynamic annealing in Ge studied by pulsed ion beams journal, October 2017

Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide journal, August 2016

III-V compound SC for optoelectronic devices journal, April 2009

The potential of III-V semiconductors as terrestrial photovoltaic devices journal, January 2006

Influence of the dose rate on the damage production in ion implanted GaAs journal, November 1990

Low temperature channeling measurements of ion implantation lattice disorder in GaAs † journal, May 1971

Flux, fluence and implantation temperature dependence of disorder produced by 40 keV N + ion irradiation of GaAs journal, January 1980

Ion implantation of semiconductors journal, September 1998

Effective defect diffusion lengths in Ar-ion bombarded 3 C -SiC journal, April 2016

Ion Implantation of Semiconductors journal, December 1976

Ion Implantation of Semiconductors journal, January 1976

Crystalline-to-amorphous phase transformation in ion-irradiated GaAs
journal, September 2001

Comparative study of implantation‐induced damage in GaAs and Ge: Temperature and flux dependence
journal, July 1991

Pulsed ion beam measurement of defect diffusion lengths in irradiated solids
journal, March 2013

Radiation defect dynamics in Si at room temperature studied by pulsed ion beams
journal, October 2015

Effects of collision cascade density on radiation defect dynamics in 3C-SiC
journal, March 2017

Some new aspects for the evaluation of disorder profiles in silicon by backscattering
journal, January 1973

The role of Frenkel defect diffusion in dynamic annealing in ion-irradiated Si
journal, January 2017

A method for the solution of certain non-linear problems in least squares
journal, January 1944

Dose rate effects on damage formation in ion-implanted gallium arsenide
journal, July 1991

Dose‐rate effects in GaAs investigated by discrete pulsed implantation using a focused ion beam
journal, October 1996

Fractal analysis of collision cascades in pulsed-ion-beam-irradiated solids
journal, December 2017

Critical temperature and ion flux dependence of amorphization in GaAs
journal, June 1997

Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si
journal, August 2012

Dynamic annealing in Ge studied by pulsed ion beams
journal, October 2017

Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide
journal, August 2016

III-V compound SC for optoelectronic devices
journal, April 2009

The potential of III-V semiconductors as terrestrial photovoltaic devices
journal, January 2006

Influence of the dose rate on the damage production in ion implanted GaAs
journal, November 1990

Low temperature channeling measurements of ion implantation lattice disorder in GaAs ^†
journal, May 1971

Flux, fluence and implantation temperature dependence of disorder produced by 40 keV N ⁺ ion irradiation of GaAs
journal, January 1980

Ion implantation of semiconductors
journal, September 1998

Effective defect diffusion lengths in Ar-ion bombarded 3 C -SiC
journal, April 2016

Ion Implantation of Semiconductors
journal, December 1976

Ion Implantation of Semiconductors
journal, January 1976