The role of Frenkel defect diffusion in dynamic annealing in ion-irradiated Si

Wallace, J. B.; Aji, L. B.  Bayu; Martin, A. A.; Shin, S. J.; Shao, L.; Kucheyev, S. O.

doi:10.1038/srep39754

Title: The role of Frenkel defect diffusion in dynamic annealing in ion-irradiated Si

Journal Article · Fri Jan 06 00:00:00 EST 2017 · Scientific Reports

DOI:https://doi.org/10.1038/srep39754· OSTI ID:1410028

Wallace, J. B.; Aji, L. B. Bayu; Martin, A. A.; Shin, S. J.; Shao, L.; Kucheyev, S. O.

The formation of stable radiation damage in crystalline solids often proceeds via complex dynamic annealing processes, involving migration and interaction of ballistically-generated point defects. The dominant dynamic annealing processes, however, remain unknown even for crystalline Si. Here, we use a pulsed ion beam method to study defect dynamics in Si bombarded in the temperature range from -20 to 140 °C with 500 keV Ar ions. Results reveal a defect relaxation time constant of ~10–0.2 ms, which decreases monotonically with increasing temperature. The dynamic annealing rate shows an Arrhenius dependence with two well-defined activation energies of 73 ± 5 meV and 420 ± 10 meV, below and above 60 °C, respectively. Rate theory modeling, bench-marked against this data, suggests a crucial role of both vacancy and interstitial diffusion, with the dynamic annealing rate limited by the migration and interaction of vacancies.

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Research Organization:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC52-07NA27344

OSTI ID:: 1410028

Report Number(s):: LLNL-JRNL-677440

Journal Information:: Scientific Reports, Vol. 7; ISSN 2045-2322

Publisher:: Nature Publishing Group

Country of Publication:: United States

Language:: English

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Impact of pre-existing disorder on radiation defect dynamics in Si Wallace, J. B.; Bayu Aji, L. B.; Shao, L. Scientific Reports, Vol. 9, Issue 1 https://doi.org/10.1038/s41598-019-48415-7	journal	August 2019
Radiation defect dynamics in GaAs studied by pulsed ion beams Bayu Aji, L. B.; Wallace, J. B.; Kucheyev, S. O. Journal of Applied Physics, Vol. 124, Issue 2 https://doi.org/10.1063/1.5038018	journal	July 2018
Dynamic annealing in Ge studied by pulsed ion beams Wallace, J. B.; Bayu Aji, L. B.; Shao, L. Scientific Reports, Vol. 7, Issue 1 https://doi.org/10.1038/s41598-017-13161-1	journal	October 2017

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