skip to main content

DOE PAGESDOE PAGES

Title: Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide

Understanding response of solids to particle irradiation remains a major materials physics challenge. This applies even to SiC, which is a prototypical nuclear ceramic and wide-band-gap semiconductor material. The lack of predictability is largely related to the complex, dynamic nature of radiation defect formation. Here, we use a novel pulsed-ion-beam method to study dynamic annealing in 4H-SiC ion-bombarded in the temperature range of 25–250 °C. We find that, while the defect recombination efficiency shows an expected monotonic increase with increasing temperature, the defect lifetime exhibits a non-monotonic temperature dependence with a maximum at ~100 °C. This finding indicates a change in the dominant defect interaction mechanism at ~100 °C. As a result, the understanding of radiation defect dynamics may suggest new paths to designing radiation-resistant materials.
Authors:
 [1] ;  [2] ;  [3] ;  [1]
  1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  2. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Texas A&M Univ., College Station, TX (United States)
  3. Texas A&M Univ., College Station, TX (United States)
Publication Date:
Report Number(s):
LLNL-JRNL-677429
Journal ID: ISSN 2045-2322; TRN: US1601834
Grant/Contract Number:
AC52-07NA27344
Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 6; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Research Org:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
OSTI Identifier:
1297652

Bayu Aji, L. B., Wallace, J. B., Shao, L., and Kucheyev, S. O.. Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide. United States: N. p., Web. doi:10.1038/srep30931.
Bayu Aji, L. B., Wallace, J. B., Shao, L., & Kucheyev, S. O.. Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide. United States. doi:10.1038/srep30931.
Bayu Aji, L. B., Wallace, J. B., Shao, L., and Kucheyev, S. O.. 2016. "Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide". United States. doi:10.1038/srep30931. https://www.osti.gov/servlets/purl/1297652.
@article{osti_1297652,
title = {Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide},
author = {Bayu Aji, L. B. and Wallace, J. B. and Shao, L. and Kucheyev, S. O.},
abstractNote = {Understanding response of solids to particle irradiation remains a major materials physics challenge. This applies even to SiC, which is a prototypical nuclear ceramic and wide-band-gap semiconductor material. The lack of predictability is largely related to the complex, dynamic nature of radiation defect formation. Here, we use a novel pulsed-ion-beam method to study dynamic annealing in 4H-SiC ion-bombarded in the temperature range of 25–250 °C. We find that, while the defect recombination efficiency shows an expected monotonic increase with increasing temperature, the defect lifetime exhibits a non-monotonic temperature dependence with a maximum at ~100 °C. This finding indicates a change in the dominant defect interaction mechanism at ~100 °C. As a result, the understanding of radiation defect dynamics may suggest new paths to designing radiation-resistant materials.},
doi = {10.1038/srep30931},
journal = {Scientific Reports},
number = ,
volume = 6,
place = {United States},
year = {2016},
month = {8}
}