Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide
Abstract
Understanding response of solids to particle irradiation remains a major materials physics challenge. This applies even to SiC, which is a prototypical nuclear ceramic and wide-band-gap semiconductor material. The lack of predictability is largely related to the complex, dynamic nature of radiation defect formation. Here, we use a novel pulsed-ion-beam method to study dynamic annealing in 4H-SiC ion-bombarded in the temperature range of 25–250 °C. We find that, while the defect recombination efficiency shows an expected monotonic increase with increasing temperature, the defect lifetime exhibits a non-monotonic temperature dependence with a maximum at ~100 °C. This finding indicates a change in the dominant defect interaction mechanism at ~100 °C. As a result, the understanding of radiation defect dynamics may suggest new paths to designing radiation-resistant materials.
- Authors:
-
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Texas A&M Univ., College Station, TX (United States)
- Texas A&M Univ., College Station, TX (United States)
- Publication Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1297652
- Report Number(s):
- LLNL-JRNL-677429
Journal ID: ISSN 2045-2322; TRN: US1601834
- Grant/Contract Number:
- AC52-07NA27344
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Scientific Reports
- Additional Journal Information:
- Journal Volume: 6; Journal ID: ISSN 2045-2322
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Bayu Aji, L. B., Wallace, J. B., Shao, L., and Kucheyev, S. O.. Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide. United States: N. p., 2016.
Web. doi:10.1038/srep30931.
Bayu Aji, L. B., Wallace, J. B., Shao, L., & Kucheyev, S. O.. Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide. United States. https://doi.org/10.1038/srep30931
Bayu Aji, L. B., Wallace, J. B., Shao, L., and Kucheyev, S. O.. Wed .
"Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide". United States. https://doi.org/10.1038/srep30931. https://www.osti.gov/servlets/purl/1297652.
@article{osti_1297652,
title = {Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide},
author = {Bayu Aji, L. B. and Wallace, J. B. and Shao, L. and Kucheyev, S. O.},
abstractNote = {Understanding response of solids to particle irradiation remains a major materials physics challenge. This applies even to SiC, which is a prototypical nuclear ceramic and wide-band-gap semiconductor material. The lack of predictability is largely related to the complex, dynamic nature of radiation defect formation. Here, we use a novel pulsed-ion-beam method to study dynamic annealing in 4H-SiC ion-bombarded in the temperature range of 25–250 °C. We find that, while the defect recombination efficiency shows an expected monotonic increase with increasing temperature, the defect lifetime exhibits a non-monotonic temperature dependence with a maximum at ~100 °C. This finding indicates a change in the dominant defect interaction mechanism at ~100 °C. As a result, the understanding of radiation defect dynamics may suggest new paths to designing radiation-resistant materials.},
doi = {10.1038/srep30931},
journal = {Scientific Reports},
number = ,
volume = 6,
place = {United States},
year = {Wed Aug 03 00:00:00 EDT 2016},
month = {Wed Aug 03 00:00:00 EDT 2016}
}
Web of Science
Works referenced in this record:
Electron-irradiation-induced crystalline-to-amorphous transition in β-SiC single crystals
journal, January 1992
- Inui, H.; Mori, H.; Suzuki, A.
- Philosophical Magazine B, Vol. 65, Issue 1
Ionization-induced annealing of pre-existing defects in silicon carbide
journal, August 2015
- Zhang, Yanwen; Sachan, Ritesh; Pakarinen, Olli H.
- Nature Communications, Vol. 6, Issue 1
Positron annihilation investigation of electron irradiation-produced defects in 6H-SiC
journal, January 2004
- Dannefaer, S.; Kerr, D.
- Diamond and Related Materials, Vol. 13, Issue 1
Ion implantation of silicon carbide
journal, January 2002
- Hallén, A.; Janson, M. S.; Kuznetsov, A. Yu
- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 186, Issue 1-4
Radiation defect dynamics in Si at room temperature studied by pulsed ion beams
journal, October 2015
- Wallace, J. B.; Charnvanichborikarn, S.; Bayu Aji, L. B.
- Journal of Applied Physics, Vol. 118, Issue 13
Handbook of SiC properties for fuel performance modeling
journal, September 2007
- Snead, Lance L.; Nozawa, Takashi; Katoh, Yutai
- Journal of Nuclear Materials, Vol. 371, Issue 1-3
Some new aspects for the evaluation of disorder profiles in silicon by backscattering
journal, January 1973
- Schmid, K.
- Radiation Effects, Vol. 17, Issue 3-4
Atomic scale simulation of defect production in irradiated 3C-SiC
journal, September 2001
- Devanathan, R.; Weber, W. J.; Gao, F.
- Journal of Applied Physics, Vol. 90, Issue 5
Ab initio based rate theory model of radiation induced amorphization in β-SiC
journal, July 2011
- Swaminathan, Narasimhan; Morgan, Dane; Szlufarska, Izabela
- Journal of Nuclear Materials, Vol. 414, Issue 3
Radiation-induced amorphization and swelling in ceramics
journal, March 1991
- Matsunaga, A.; Kinoshita, C.; Nakai, K.
- Journal of Nuclear Materials, Vol. 179-181
Crystalline-to-amorphous transition for Si-ion irradiation of Si(100)
journal, October 1991
- Schultz, Peter J.; Jagadish, C.; Ridgway, M. C.
- Physical Review B, Vol. 44, Issue 16
Defect annealing kinetics in irradiated 6H–SiC
journal, May 2000
- Weber, W. J.; Jiang, W.; Thevuthasan, S.
- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 166-167
Electron-irradiation-induced crystalline to amorphous transition in α-Sic single crystals
journal, January 1990
- Inui, H.; Mori, H.; Fujita, H.
- Philosophical Magazine B, Vol. 61, Issue 1
Temperature dependence of disorder accumulation and amorphization in Au-ion-irradiated
journal, October 2004
- Jiang, W.; Zhang, Y.; Weber, W. J.
- Physical Review B, Vol. 70, Issue 16
Single-photon emitting diode in silicon carbide
journal, July 2015
- Lohrmann, A.; Iwamoto, N.; Bodrog, Z.
- Nature Communications, Vol. 6, Issue 1
Pulsed ion beam measurement of defect diffusion lengths in irradiated solids
journal, March 2013
- Charnvanichborikarn, S.; Myers, M. T.; Shao, L.
- Journal of Physics: Condensed Matter, Vol. 25, Issue 16
Structure and properties of ion-beam-modified (6H) silicon carbide
journal, September 1998
- Weber, W. J.; Wang, L. M.; Yu, N.
- Materials Science and Engineering: A, Vol. 253, Issue 1-2
Influence of irradiation spectrum and implanted ions on the amorphization of ceramics
journal, August 1996
- Zinkle, S. J.; Snead, L. L.
- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 116, Issue 1-4
An EPR study of defects induced in 6H-SiC by ion implantation
journal, March 1997
- Barklie, R. C.; Collins, M.; Holm, B.
- Journal of Electronic Materials, Vol. 26, Issue 3
Temperature dependence of damage formation in Ag ion irradiated 4H-SiC
journal, October 2010
- Wendler, E.; Bierschenk, Th.; Wesch, W.
- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 268, Issue 19
SRIM – The stopping and range of ions in matter (2010)
journal, June 2010
- Ziegler, James F.; Ziegler, M. D.; Biersack, J. P.
- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 268, Issue 11-12
Photoluminescence of radiation induced defects in 3C‐SiC epitaxially grown on Si
journal, January 1995
- Itoh, Hisayoshi; Yoshikawa, Masahito; Nashiyama, Isamu
- Journal of Applied Physics, Vol. 77, Issue 2
Dynamic annealing in ion implanted SiC: Flux versus temperature dependence
journal, December 2003
- Kuznetsov, A. Yu.; Wong-Leung, J.; Hallén, A.
- Journal of Applied Physics, Vol. 94, Issue 11
Effects of implantation temperature and ion flux on damage accumulation in Al-implanted 4H-SiC
journal, February 2003
- Zhang, Y.; Weber, W. J.; Jiang, W.
- Journal of Applied Physics, Vol. 93, Issue 4
Temperature and irradiation species dependence of radiation response of nanocrystalline silicon carbide
journal, December 2014
- Jamison, Laura; Sridharan, Kumar; Shannon, Steve
- Journal of Materials Research, Vol. 29, Issue 23
A model for the formation of amorphous Si by ion bombardment
journal, January 1970
- Morehead, F. F.; Crowder, B. L.
- Radiation Effects, Vol. 6, Issue 1
Electron spin resonance in electron‐irradiated 3C‐SiC
journal, November 1989
- Itoh, Hisayoshi; Hayakawa, Naohiro; Nashiyama, Isamu
- Journal of Applied Physics, Vol. 66, Issue 9
Irradiation-induced atomic defects in SiC studied by positron annihilation
journal, July 1995
- Rempel, A. A.; Schaefer, H. -E.
- Applied Physics A Materials Science & Processing, Vol. 61, Issue 1
Time constant of defect relaxation in ion-irradiated 3C-SiC
journal, May 2015
- Wallace, J. B.; Bayu Aji, L. B.; Shao, L.
- Applied Physics Letters, Vol. 106, Issue 20
Damage buildup in Ar-ion-irradiated 3 C -SiC at elevated temperatures
journal, September 2015
- Wallace, J. B.; Bayu Aji, L. B.; Li, T. T.
- Journal of Applied Physics, Vol. 118, Issue 10
Fluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H–SiC
journal, February 2005
- Slotte, J.; Saarinen, K.; Janson, M. S.
- Journal of Applied Physics, Vol. 97, Issue 3
Defect accumulation during room temperature N+ irradiation of silicon
journal, December 1996
- Titov, A. I.; Carter, G.
- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 119, Issue 4
Formation of surface amorphous layers in semiconductors under low-energy light-ion irradiation: Experiment and theory
journal, December 2003
- Titov, A. I.; Belyakov, V. S.; Azarov, A. Yu.
- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 212
Handbook of SiC properties for fuel performance modeling
journal, September 2007
- Snead, Lance L.; Nozawa, Takashi; Katoh, Yutai
- Journal of Nuclear Materials, Vol. 371, Issue 1-3
Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties
journal, May 2003
- Fissel, A.
- Physics Reports, Vol. 379, Issue 3-4, p. 149-255
Single-photon emitting diode in silicon carbide
journal, July 2015
- Lohrmann, A.; Iwamoto, N.; Bodrog, Z.
- Nature Communications, Vol. 6, Issue 1
Ionization-induced annealing of pre-existing defects in silicon carbide
journal, August 2015
- Zhang, Yanwen; Sachan, Ritesh; Pakarinen, Olli H.
- Nature Communications, Vol. 6, Issue 1
Atomic scale simulation of defect production in irradiated 3C-SiC
journal, September 2001
- Devanathan, R.; Weber, W. J.; Gao, F.
- Journal of Applied Physics, Vol. 90, Issue 5
Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si
journal, August 2012
- Myers, M. T.; Charnvanichborikarn, S.; Shao, L.
- Physical Review Letters, Vol. 109, Issue 9
Works referencing / citing this record:
Impact of pre-existing disorder on radiation defect dynamics in Si
journal, August 2019
- Wallace, J. B.; Bayu Aji, L. B.; Shao, L.
- Scientific Reports, Vol. 9, Issue 1
Radiation defect dynamics in GaAs studied by pulsed ion beams
journal, July 2018
- Bayu Aji, L. B.; Wallace, J. B.; Kucheyev, S. O.
- Journal of Applied Physics, Vol. 124, Issue 2
Dynamic annealing in Ge studied by pulsed ion beams
journal, October 2017
- Wallace, J. B.; Bayu Aji, L. B.; Shao, L.
- Scientific Reports, Vol. 7, Issue 1
Impact of pre-existing disorder on radiation defect dynamics in Si
journal, August 2019
- Wallace, J. B.; Bayu Aji, L. B.; Shao, L.
- Scientific Reports, Vol. 9, Issue 1
Effects of collision cascade density on radiation defect dynamics in 3C-SiC
journal, March 2017
- Bayu Aji, L. B.; Wallace, J. B.; Kucheyev, S. O.
- Scientific Reports, Vol. 7, Issue 1