Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide

Bayu Aji, L. B.; Wallace, J. B.; Shao, L.; Kucheyev, S. O.

doi:10.1038/srep30931

Title: Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide

Journal Article · Wed Aug 03 04:00:00 UTC 2016 · Scientific Reports

DOI: https://doi.org/10.1038/srep30931 · OSTI ID:1297652

Bayu Aji, L. B. ^[1]; Wallace, J. B. ^[2]; Shao, L. ^[3]; Kucheyev, S. O. ^[1]

Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Texas A&M Univ., College Station, TX (United States)
Texas A&M Univ., College Station, TX (United States)

Understanding response of solids to particle irradiation remains a major materials physics challenge. This applies even to SiC, which is a prototypical nuclear ceramic and wide-band-gap semiconductor material. The lack of predictability is largely related to the complex, dynamic nature of radiation defect formation. Here, we use a novel pulsed-ion-beam method to study dynamic annealing in 4H-SiC ion-bombarded in the temperature range of 25–250 °C. We find that, while the defect recombination efficiency shows an expected monotonic increase with increasing temperature, the defect lifetime exhibits a non-monotonic temperature dependence with a maximum at ~100 °C. This finding indicates a change in the dominant defect interaction mechanism at ~100 °C. As a result, the understanding of radiation defect dynamics may suggest new paths to designing radiation-resistant materials.

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Research Organization:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC52-07NA27344

OSTI ID:: 1297652

Report Number(s):: LLNL-JRNL--677429

Journal Information:: Scientific Reports, Journal Name: Scientific Reports Vol. 6; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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