DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide

Abstract

Understanding response of solids to particle irradiation remains a major materials physics challenge. This applies even to SiC, which is a prototypical nuclear ceramic and wide-band-gap semiconductor material. The lack of predictability is largely related to the complex, dynamic nature of radiation defect formation. Here, we use a novel pulsed-ion-beam method to study dynamic annealing in 4H-SiC ion-bombarded in the temperature range of 25–250 °C. We find that, while the defect recombination efficiency shows an expected monotonic increase with increasing temperature, the defect lifetime exhibits a non-monotonic temperature dependence with a maximum at ~100 °C. This finding indicates a change in the dominant defect interaction mechanism at ~100 °C. As a result, the understanding of radiation defect dynamics may suggest new paths to designing radiation-resistant materials.

Authors:
 [1];  [2];  [3];  [1]
  1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  2. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Texas A&M Univ., College Station, TX (United States)
  3. Texas A&M Univ., College Station, TX (United States)
Publication Date:
Research Org.:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1297652
Report Number(s):
LLNL-JRNL-677429
Journal ID: ISSN 2045-2322; TRN: US1601834
Grant/Contract Number:  
AC52-07NA27344
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 6; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Bayu Aji, L. B., Wallace, J. B., Shao, L., and Kucheyev, S. O.. Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide. United States: N. p., 2016. Web. doi:10.1038/srep30931.
Bayu Aji, L. B., Wallace, J. B., Shao, L., & Kucheyev, S. O.. Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide. United States. https://doi.org/10.1038/srep30931
Bayu Aji, L. B., Wallace, J. B., Shao, L., and Kucheyev, S. O.. Wed . "Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide". United States. https://doi.org/10.1038/srep30931. https://www.osti.gov/servlets/purl/1297652.
@article{osti_1297652,
title = {Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide},
author = {Bayu Aji, L. B. and Wallace, J. B. and Shao, L. and Kucheyev, S. O.},
abstractNote = {Understanding response of solids to particle irradiation remains a major materials physics challenge. This applies even to SiC, which is a prototypical nuclear ceramic and wide-band-gap semiconductor material. The lack of predictability is largely related to the complex, dynamic nature of radiation defect formation. Here, we use a novel pulsed-ion-beam method to study dynamic annealing in 4H-SiC ion-bombarded in the temperature range of 25–250 °C. We find that, while the defect recombination efficiency shows an expected monotonic increase with increasing temperature, the defect lifetime exhibits a non-monotonic temperature dependence with a maximum at ~100 °C. This finding indicates a change in the dominant defect interaction mechanism at ~100 °C. As a result, the understanding of radiation defect dynamics may suggest new paths to designing radiation-resistant materials.},
doi = {10.1038/srep30931},
journal = {Scientific Reports},
number = ,
volume = 6,
place = {United States},
year = {Wed Aug 03 00:00:00 EDT 2016},
month = {Wed Aug 03 00:00:00 EDT 2016}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 17 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Electron-irradiation-induced crystalline-to-amorphous transition in β-SiC single crystals
journal, January 1992


Ionization-induced annealing of pre-existing defects in silicon carbide
journal, August 2015

  • Zhang, Yanwen; Sachan, Ritesh; Pakarinen, Olli H.
  • Nature Communications, Vol. 6, Issue 1
  • DOI: 10.1038/ncomms9049

Positron annihilation investigation of electron irradiation-produced defects in 6H-SiC
journal, January 2004


Ion implantation of silicon carbide
journal, January 2002

  • Hallén, A.; Janson, M. S.; Kuznetsov, A. Yu
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 186, Issue 1-4
  • DOI: 10.1016/S0168-583X(01)00880-1

Radiation defect dynamics in Si at room temperature studied by pulsed ion beams
journal, October 2015

  • Wallace, J. B.; Charnvanichborikarn, S.; Bayu Aji, L. B.
  • Journal of Applied Physics, Vol. 118, Issue 13
  • DOI: 10.1063/1.4932209

Handbook of SiC properties for fuel performance modeling
journal, September 2007


Some new aspects for the evaluation of disorder profiles in silicon by backscattering
journal, January 1973


Atomic scale simulation of defect production in irradiated 3C-SiC
journal, September 2001

  • Devanathan, R.; Weber, W. J.; Gao, F.
  • Journal of Applied Physics, Vol. 90, Issue 5
  • DOI: 10.1063/1.1389523

Ab initio based rate theory model of radiation induced amorphization in β-SiC
journal, July 2011


Radiation-induced amorphization and swelling in ceramics
journal, March 1991


Crystalline-to-amorphous transition for Si-ion irradiation of Si(100)
journal, October 1991


Defect annealing kinetics in irradiated 6H–SiC
journal, May 2000

  • Weber, W. J.; Jiang, W.; Thevuthasan, S.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 166-167
  • DOI: 10.1016/S0168-583X(99)00868-X

Electron-irradiation-induced crystalline to amorphous transition in α-Sic single crystals
journal, January 1990


Temperature dependence of disorder accumulation and amorphization in Au-ion-irradiated 6 H Si C
journal, October 2004


Single-photon emitting diode in silicon carbide
journal, July 2015

  • Lohrmann, A.; Iwamoto, N.; Bodrog, Z.
  • Nature Communications, Vol. 6, Issue 1
  • DOI: 10.1038/ncomms8783

Pulsed ion beam measurement of defect diffusion lengths in irradiated solids
journal, March 2013


Structure and properties of ion-beam-modified (6H) silicon carbide
journal, September 1998


Influence of irradiation spectrum and implanted ions on the amorphization of ceramics
journal, August 1996

  • Zinkle, S. J.; Snead, L. L.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 116, Issue 1-4
  • DOI: 10.1016/0168-583X(96)00016-X

An EPR study of defects induced in 6H-SiC by ion implantation
journal, March 1997


Temperature dependence of damage formation in Ag ion irradiated 4H-SiC
journal, October 2010

  • Wendler, E.; Bierschenk, Th.; Wesch, W.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 268, Issue 19
  • DOI: 10.1016/j.nimb.2010.05.026

SRIM – The stopping and range of ions in matter (2010)
journal, June 2010

  • Ziegler, James F.; Ziegler, M. D.; Biersack, J. P.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 268, Issue 11-12
  • DOI: 10.1016/j.nimb.2010.02.091

Photoluminescence of radiation induced defects in 3C‐SiC epitaxially grown on Si
journal, January 1995

  • Itoh, Hisayoshi; Yoshikawa, Masahito; Nashiyama, Isamu
  • Journal of Applied Physics, Vol. 77, Issue 2
  • DOI: 10.1063/1.359008

Dynamic annealing in ion implanted SiC: Flux versus temperature dependence
journal, December 2003

  • Kuznetsov, A. Yu.; Wong-Leung, J.; Hallén, A.
  • Journal of Applied Physics, Vol. 94, Issue 11
  • DOI: 10.1063/1.1622797

Effects of implantation temperature and ion flux on damage accumulation in Al-implanted 4H-SiC
journal, February 2003

  • Zhang, Y.; Weber, W. J.; Jiang, W.
  • Journal of Applied Physics, Vol. 93, Issue 4
  • DOI: 10.1063/1.1537451

Temperature and irradiation species dependence of radiation response of nanocrystalline silicon carbide
journal, December 2014

  • Jamison, Laura; Sridharan, Kumar; Shannon, Steve
  • Journal of Materials Research, Vol. 29, Issue 23
  • DOI: 10.1557/jmr.2014.340

A model for the formation of amorphous Si by ion bombardment
journal, January 1970


Electron spin resonance in electron‐irradiated 3C‐SiC
journal, November 1989

  • Itoh, Hisayoshi; Hayakawa, Naohiro; Nashiyama, Isamu
  • Journal of Applied Physics, Vol. 66, Issue 9
  • DOI: 10.1063/1.343920

Irradiation-induced atomic defects in SiC studied by positron annihilation
journal, July 1995

  • Rempel, A. A.; Schaefer, H. -E.
  • Applied Physics A Materials Science & Processing, Vol. 61, Issue 1
  • DOI: 10.1007/BF01538210

Time constant of defect relaxation in ion-irradiated 3C-SiC
journal, May 2015

  • Wallace, J. B.; Bayu Aji, L. B.; Shao, L.
  • Applied Physics Letters, Vol. 106, Issue 20
  • DOI: 10.1063/1.4921471

Damage buildup in Ar-ion-irradiated 3 C -SiC at elevated temperatures
journal, September 2015

  • Wallace, J. B.; Bayu Aji, L. B.; Li, T. T.
  • Journal of Applied Physics, Vol. 118, Issue 10
  • DOI: 10.1063/1.4929953

Fluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H–SiC
journal, February 2005

  • Slotte, J.; Saarinen, K.; Janson, M. S.
  • Journal of Applied Physics, Vol. 97, Issue 3
  • DOI: 10.1063/1.1844618

Defect accumulation during room temperature N+ irradiation of silicon
journal, December 1996

  • Titov, A. I.; Carter, G.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 119, Issue 4
  • DOI: 10.1016/S0168-583X(96)00353-9

Formation of surface amorphous layers in semiconductors under low-energy light-ion irradiation: Experiment and theory
journal, December 2003

  • Titov, A. I.; Belyakov, V. S.; Azarov, A. Yu.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 212
  • DOI: 10.1016/S0168-583X(03)01486-1

Handbook of SiC properties for fuel performance modeling
journal, September 2007


Single-photon emitting diode in silicon carbide
journal, July 2015

  • Lohrmann, A.; Iwamoto, N.; Bodrog, Z.
  • Nature Communications, Vol. 6, Issue 1
  • DOI: 10.1038/ncomms8783

Ionization-induced annealing of pre-existing defects in silicon carbide
journal, August 2015

  • Zhang, Yanwen; Sachan, Ritesh; Pakarinen, Olli H.
  • Nature Communications, Vol. 6, Issue 1
  • DOI: 10.1038/ncomms9049

Atomic scale simulation of defect production in irradiated 3C-SiC
journal, September 2001

  • Devanathan, R.; Weber, W. J.; Gao, F.
  • Journal of Applied Physics, Vol. 90, Issue 5
  • DOI: 10.1063/1.1389523

Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si
journal, August 2012


Works referencing / citing this record:

Impact of pre-existing disorder on radiation defect dynamics in Si
journal, August 2019


Radiation defect dynamics in GaAs studied by pulsed ion beams
journal, July 2018

  • Bayu Aji, L. B.; Wallace, J. B.; Kucheyev, S. O.
  • Journal of Applied Physics, Vol. 124, Issue 2
  • DOI: 10.1063/1.5038018

Dynamic annealing in Ge studied by pulsed ion beams
journal, October 2017


Impact of pre-existing disorder on radiation defect dynamics in Si
journal, August 2019


Effects of collision cascade density on radiation defect dynamics in 3C-SiC
journal, March 2017

  • Bayu Aji, L. B.; Wallace, J. B.; Kucheyev, S. O.
  • Scientific Reports, Vol. 7, Issue 1
  • DOI: 10.1038/srep44703