skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Effects of collision cascade density on radiation defect dynamics in 3C-SiC

Abstract

Effects of the collision cascade density on radiation damage in SiC remain poorly understood. We study damage buildup and defect interaction dynamics in 3C-SiC bombarded at 100 °C with either continuous or pulsed beams of 500 keV Ne, Ar, Kr, or Xe ions. Here, we find that bombardment with heavier ions, which create denser collision cascades, results in a decrease in the dynamic annealing efficiency and an increase in both the amorphization cross-section constant and the time constant of dynamic annealing. The cascade density behavior of these parameters is non-linear and appears to be uncorrelated. Our results demonstrate clearly (and quantitatively) an important role of the collision cascade density in dynamic radiation defect processes in 3C-SiC.

Authors:
 [1];  [2];  [1]
  1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  2. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Texas A & M Univ., College Station, TX (United States). Dept. of Nuclear Engineering
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE Office of Nuclear Energy (NE)
OSTI Identifier:
1366962
Report Number(s):
LLNL-JRNL-702569
Journal ID: ISSN 2045-2322
Grant/Contract Number:  
AC52-07NA27344
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 7; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; condensed-matter physics; materials science

Citation Formats

Bayu Aji, L. B., Wallace, J. B., and Kucheyev, S. O. Effects of collision cascade density on radiation defect dynamics in 3C-SiC. United States: N. p., 2017. Web. doi:10.1038/srep44703.
Bayu Aji, L. B., Wallace, J. B., & Kucheyev, S. O. Effects of collision cascade density on radiation defect dynamics in 3C-SiC. United States. doi:10.1038/srep44703.
Bayu Aji, L. B., Wallace, J. B., and Kucheyev, S. O. Fri . "Effects of collision cascade density on radiation defect dynamics in 3C-SiC". United States. doi:10.1038/srep44703. https://www.osti.gov/servlets/purl/1366962.
@article{osti_1366962,
title = {Effects of collision cascade density on radiation defect dynamics in 3C-SiC},
author = {Bayu Aji, L. B. and Wallace, J. B. and Kucheyev, S. O.},
abstractNote = {Effects of the collision cascade density on radiation damage in SiC remain poorly understood. We study damage buildup and defect interaction dynamics in 3C-SiC bombarded at 100 °C with either continuous or pulsed beams of 500 keV Ne, Ar, Kr, or Xe ions. Here, we find that bombardment with heavier ions, which create denser collision cascades, results in a decrease in the dynamic annealing efficiency and an increase in both the amorphization cross-section constant and the time constant of dynamic annealing. The cascade density behavior of these parameters is non-linear and appears to be uncorrelated. Our results demonstrate clearly (and quantitatively) an important role of the collision cascade density in dynamic radiation defect processes in 3C-SiC.},
doi = {10.1038/srep44703},
journal = {Scientific Reports},
number = ,
volume = 7,
place = {United States},
year = {2017},
month = {3}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 15 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Electron-irradiation-induced crystalline-to-amorphous transition in β-SiC single crystals
journal, January 1992


The temperature dependence of ion-beam-induced amorphization in β-SiC
journal, December 1995

  • Weber, W. J.; Wang, L. M.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 106, Issue 1-4
  • DOI: 10.1016/0168-583X(95)00722-9

Nanoscale engineering of radiation tolerant silicon carbide
journal, January 2012

  • Zhang, Yanwen; Ishimaru, Manabu; Varga, Tamas
  • Physical Chemistry Chemical Physics, Vol. 14, Issue 38
  • DOI: 10.1039/c2cp42342a

Ionization-induced annealing of pre-existing defects in silicon carbide
journal, August 2015

  • Zhang, Yanwen; Sachan, Ritesh; Pakarinen, Olli H.
  • Nature Communications, Vol. 6, Issue 1
  • DOI: 10.1038/ncomms9049

A Rutherford backscattering study of Ar- and Xe-implanted silicon carbide
journal, March 1992

  • Föhl, A.; Emrick, R. M.; Carstanjen, H. D.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 65, Issue 1-4
  • DOI: 10.1016/0168-583X(92)95062-V

Effect of collision cascade density on radiation damage in SiC
journal, May 2009

  • Azarov, A. Yu.; Titov, A. I.; Karaseov, P. A.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 267, Issue 8-9
  • DOI: 10.1016/j.nimb.2009.01.025

Ion-beam-produced structural defects in ZnO
journal, March 2003


Radiation defect dynamics in Si at room temperature studied by pulsed ion beams
journal, October 2015

  • Wallace, J. B.; Charnvanichborikarn, S.; Bayu Aji, L. B.
  • Journal of Applied Physics, Vol. 118, Issue 13
  • DOI: 10.1063/1.4932209

Handbook of SiC properties for fuel performance modeling
journal, September 2007


Some new aspects for the evaluation of disorder profiles in silicon by backscattering
journal, January 1973


Energy spike effects in ion-bombarded GaN
journal, April 2009


A method for the solution of certain non-linear problems in least squares
journal, January 1944

  • Levenberg, Kenneth
  • Quarterly of Applied Mathematics, Vol. 2, Issue 2
  • DOI: 10.1090/qam/10666

Atomic scale simulation of defect production in irradiated 3C-SiC
journal, September 2001

  • Devanathan, R.; Weber, W. J.; Gao, F.
  • Journal of Applied Physics, Vol. 90, Issue 5
  • DOI: 10.1063/1.1389523

Radiation-induced amorphization and swelling in ceramics
journal, March 1991


Effects of the density of collision cascades: Separating contributions from dynamic annealing and energy spikes
journal, August 2009

  • Titov, A. I.; Karaseov, P. A.; Azarov, A. Yu.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 267, Issue 16
  • DOI: 10.1016/j.nimb.2009.05.033

Effective defect diffusion lengths in Ar-ion bombarded 3 C -SiC
journal, April 2016


Effect of the density of collision cascades on ion implantation damage in ZnO
journal, October 2007

  • Azarov, A. Yu.; Kucheyev, S. O.; Titov, A. I.
  • Journal of Applied Physics, Vol. 102, Issue 8
  • DOI: 10.1063/1.2801404

Pulsed ion beam measurement of defect diffusion lengths in irradiated solids
journal, March 2013


Structure and properties of ion-beam-modified (6H) silicon carbide
journal, September 1998


Influence of irradiation spectrum and implanted ions on the amorphization of ceramics
journal, August 1996

  • Zinkle, S. J.; Snead, L. L.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 116, Issue 1-4
  • DOI: 10.1016/0168-583X(96)00016-X

SRIM – The stopping and range of ions in matter (2010)
journal, June 2010

  • Ziegler, James F.; Ziegler, M. D.; Biersack, J. P.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 268, Issue 11-12
  • DOI: 10.1016/j.nimb.2010.02.091

Mechanism for the molecular effect in Si bombarded with clusters of light atoms
journal, February 2006


Amorphization and recrystallization of covalent tetrahedral networks
journal, January 1999

  • Bolse, Wolfgang
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 148, Issue 1-4
  • DOI: 10.1016/S0168-583X(98)00855-6

Materials modification with ion beams
journal, May 1986


Irradiation effects in α-SiC studied via RBS-C, Raman-scattering and surface profiling
journal, September 1996

  • Conrad, J.; Rödle, T.; Weber, T.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 118, Issue 1-4
  • DOI: 10.1016/0168-583X(95)01113-7

High density cascade effects
journal, January 1981


Effect of the density of collision cascades on implantation damage in GaN
journal, April 2001

  • Kucheyev, S. O.; Williams, J. S.; Titov, A. I.
  • Applied Physics Letters, Vol. 78, Issue 18
  • DOI: 10.1063/1.1369149

Temperature and irradiation species dependence of radiation response of nanocrystalline silicon carbide
journal, December 2014

  • Jamison, Laura; Sridharan, Kumar; Shannon, Steve
  • Journal of Materials Research, Vol. 29, Issue 23
  • DOI: 10.1557/jmr.2014.340

Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si
journal, August 2012


On the structure of irradiation-induced collision cascades in metals as a function of recoil energy and crystal structure
journal, February 1993


Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide
journal, August 2016

  • Bayu Aji, L. B.; Wallace, J. B.; Shao, L.
  • Scientific Reports, Vol. 6, Issue 1
  • DOI: 10.1038/srep30931

Time constant of defect relaxation in ion-irradiated 3C-SiC
journal, May 2015

  • Wallace, J. B.; Bayu Aji, L. B.; Shao, L.
  • Applied Physics Letters, Vol. 106, Issue 20
  • DOI: 10.1063/1.4921471

Damage buildup in Ar-ion-irradiated 3 C -SiC at elevated temperatures
journal, September 2015

  • Wallace, J. B.; Bayu Aji, L. B.; Li, T. T.
  • Journal of Applied Physics, Vol. 118, Issue 10
  • DOI: 10.1063/1.4929953

    Works referencing / citing this record:

    Comparative study of radiation defect dynamics in 3C-SiC by X-ray diffraction, Raman scattering, and ion channeling
    journal, December 2018


    Impact of pre-existing disorder on radiation defect dynamics in Si
    journal, August 2019


    Radiation defect dynamics in GaAs studied by pulsed ion beams
    journal, July 2018

    • Bayu Aji, L. B.; Wallace, J. B.; Kucheyev, S. O.
    • Journal of Applied Physics, Vol. 124, Issue 2
    • DOI: 10.1063/1.5038018

    Investigations of irradiation effects in crystalline and amorphous SiC
    journal, October 2019

    • Cowen, Benjamin J.; El-Genk, Mohamed S.; Hattar, Khalid
    • Journal of Applied Physics, Vol. 126, Issue 13
    • DOI: 10.1063/1.5085216

    Radiation defect dynamics in SiC with pre-existing defects
    journal, June 2019

    • Bayu Aji, L. B.; Wallace, J. B.; Kucheyev, S. O.
    • Journal of Applied Physics, Vol. 125, Issue 23
    • DOI: 10.1063/1.5093640