Effects of collision cascade density on radiation defect dynamics in 3C-SiC

doi:10.1038/srep44703

Title: Effects of collision cascade density on radiation defect dynamics in 3C-SiC

Effects of the collision cascade density on radiation damage in SiC remain poorly understood. We study damage buildup and defect interaction dynamics in 3C-SiC bombarded at 100 °C with either continuous or pulsed beams of 500 keV Ne, Ar, Kr, or Xe ions. Here, we find that bombardment with heavier ions, which create denser collision cascades, results in a decrease in the dynamic annealing efficiency and an increase in both the amorphization cross-section constant and the time constant of dynamic annealing. The cascade density behavior of these parameters is non-linear and appears to be uncorrelated. Our results demonstrate clearly (and quantitatively) an important role of the collision cascade density in dynamic radiation defect processes in 3C-SiC.

Authors:

Bayu Aji, L. B. ^[1] ; Wallace, J. B. ^[2] ; Kucheyev, S. O. ^[1]

Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Texas A & M Univ., College Station, TX (United States). Dept. of Nuclear Engineering

Publication Date:: 2017-03-17

Report Number(s):: LLNL-JRNL-702569
Journal ID: ISSN 2045-2322

Grant/Contract Number:: AC52-07NA27344

Type:: Accepted Manuscript

Journal Name:: Scientific Reports

Additional Journal Information:: Journal Volume: 7; Journal ID: ISSN 2045-2322

Publisher:: Nature Publishing Group

Research Org:: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Sponsoring Org:: USDOE Office of Nuclear Energy (NE)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; condensed-matter physics; materials science

OSTI Identifier:: 1366962


                    Bayu Aji, L. B., Wallace, J. B., and Kucheyev, S. O.. Effects of collision cascade density on radiation defect dynamics in 3C-SiC.  United States: N. p.,  
        Web.  doi:10.1038/srep44703.

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                    Bayu Aji, L. B., Wallace, J. B., & Kucheyev, S. O.. Effects of collision cascade density on radiation defect dynamics in 3C-SiC.  United States.  doi:10.1038/srep44703.

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                    Bayu Aji, L. B., Wallace, J. B., and Kucheyev, S. O.. 2017.  
        "Effects of collision cascade density on radiation defect dynamics in 3C-SiC".  United States.  
        doi:10.1038/srep44703.  https://www.osti.gov/servlets/purl/1366962.

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@article{osti_1366962,

  title        = {Effects of collision cascade density on radiation defect dynamics in 3C-SiC},

  author       = {Bayu Aji, L. B. and Wallace, J. B. and Kucheyev, S. O.},

  abstractNote = {Effects of the collision cascade density on radiation damage in SiC remain poorly understood. We study damage buildup and defect interaction dynamics in 3C-SiC bombarded at 100 °C with either continuous or pulsed beams of 500 keV Ne, Ar, Kr, or Xe ions. Here, we find that bombardment with heavier ions, which create denser collision cascades, results in a decrease in the dynamic annealing efficiency and an increase in both the amorphization cross-section constant and the time constant of dynamic annealing. The cascade density behavior of these parameters is non-linear and appears to be uncorrelated. Our results demonstrate clearly (and quantitatively) an important role of the collision cascade density in dynamic radiation defect processes in 3C-SiC.},

  doi          = {10.1038/srep44703},

  journal      = {Scientific Reports},

  number       = ,

  volume       = 7,

  place        = {United States},

  year         = {2017},

  month        = {3}

}

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10.1038/srep44703
https://doi.org/10.1038/srep44703

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Works referenced in this record:

Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties
journal, May 2003

Fissel, A.
Physics Reports, Vol. 379, Issue 3-4, p. 149-255
DOI: 10.1016/S0370-1573(02)00632-4

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Title: Effects of collision cascade density on radiation defect dynamics in 3C-SiC

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