Effects of collision cascade density on radiation defect dynamics in 3C-SiC

doi:10.1038/srep44703

Title: Effects of collision cascade density on radiation defect dynamics in 3C-SiC

Abstract

Effects of the collision cascade density on radiation damage in SiC remain poorly understood. We study damage buildup and defect interaction dynamics in 3C-SiC bombarded at 100 °C with either continuous or pulsed beams of 500 keV Ne, Ar, Kr, or Xe ions. Here, we find that bombardment with heavier ions, which create denser collision cascades, results in a decrease in the dynamic annealing efficiency and an increase in both the amorphization cross-section constant and the time constant of dynamic annealing. The cascade density behavior of these parameters is non-linear and appears to be uncorrelated. Our results demonstrate clearly (and quantitatively) an important role of the collision cascade density in dynamic radiation defect processes in 3C-SiC.

Authors:

Bayu Aji, L. B. ^[1]; Wallace, J. B. ^[2]; Kucheyev, S. O. ^[1]

Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Texas A & M Univ., College Station, TX (United States). Dept. of Nuclear Engineering

Publication Date:: 2017-03-17

Research Org.:: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Sponsoring Org.:: USDOE Office of Nuclear Energy (NE)

OSTI Identifier:: 1366962

Report Number(s):: LLNL-JRNL-702569
Journal ID: ISSN 2045-2322

Grant/Contract Number:: AC52-07NA27344

Resource Type:: Accepted Manuscript

Journal Name:: Scientific Reports

Additional Journal Information:: Journal Volume: 7; Journal ID: ISSN 2045-2322

Publisher:: Nature Publishing Group

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; condensed-matter physics; materials science

Citation Formats


                    Bayu Aji, L. B., Wallace, J. B., and Kucheyev, S. O. Effects of collision cascade density on radiation defect dynamics in 3C-SiC.  United States: N. p., 2017. 
        Web.  doi:10.1038/srep44703.

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                    Bayu Aji, L. B., Wallace, J. B., & Kucheyev, S. O. Effects of collision cascade density on radiation defect dynamics in 3C-SiC.  United States.  doi:10.1038/srep44703.

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                    Bayu Aji, L. B., Wallace, J. B., and Kucheyev, S. O. Fri .  
        "Effects of collision cascade density on radiation defect dynamics in 3C-SiC".  United States.  doi:10.1038/srep44703.  https://www.osti.gov/servlets/purl/1366962.

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@article{osti_1366962,

  title        = {Effects of collision cascade density on radiation defect dynamics in 3C-SiC},

  author       = {Bayu Aji, L. B. and Wallace, J. B. and Kucheyev, S. O.},

  abstractNote = {Effects of the collision cascade density on radiation damage in SiC remain poorly understood. We study damage buildup and defect interaction dynamics in 3C-SiC bombarded at 100 °C with either continuous or pulsed beams of 500 keV Ne, Ar, Kr, or Xe ions. Here, we find that bombardment with heavier ions, which create denser collision cascades, results in a decrease in the dynamic annealing efficiency and an increase in both the amorphization cross-section constant and the time constant of dynamic annealing. The cascade density behavior of these parameters is non-linear and appears to be uncorrelated. Our results demonstrate clearly (and quantitatively) an important role of the collision cascade density in dynamic radiation defect processes in 3C-SiC.},

  doi          = {10.1038/srep44703},

  journal      = {Scientific Reports},

  number       = ,

  volume       = 7,

  place        = {United States},

  year         = {2017},

  month        = {3}

}

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Works referencing / citing this record:

Comparative study of radiation defect dynamics in 3C-SiC by X-ray diffraction, Raman scattering, and ion channeling
journal, December 2018

Bayu Aji, L. B.; Stavrou, E.; Wallace, J. B.
Applied Physics A, Vol. 125, Issue 1
DOI: 10.1007/s00339-018-2325-7

Impact of pre-existing disorder on radiation defect dynamics in Si
journal, August 2019

Wallace, J. B.; Bayu Aji, L. B.; Shao, L.
Scientific Reports, Vol. 9, Issue 1
DOI: 10.1038/s41598-019-48415-7

Radiation defect dynamics in GaAs studied by pulsed ion beams
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Bayu Aji, L. B.; Wallace, J. B.; Kucheyev, S. O.
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Investigations of irradiation effects in crystalline and amorphous SiC
journal, October 2019

Cowen, Benjamin J.; El-Genk, Mohamed S.; Hattar, Khalid
Journal of Applied Physics, Vol. 126, Issue 13
DOI: 10.1063/1.5085216

Radiation defect dynamics in SiC with pre-existing defects
journal, June 2019

Bayu Aji, L. B.; Wallace, J. B.; Kucheyev, S. O.
Journal of Applied Physics, Vol. 125, Issue 23
DOI: 10.1063/1.5093640

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Similar Records

Title: Effects of collision cascade density on radiation defect dynamics in 3C-SiC

Abstract

Citation Formats

Electron-irradiation-induced crystalline-to-amorphous transition in β-SiC single crystals journal, January 1992

The temperature dependence of ion-beam-induced amorphization in β-SiC journal, December 1995

Nanoscale engineering of radiation tolerant silicon carbide journal, January 2012

Ionization-induced annealing of pre-existing defects in silicon carbide journal, August 2015

A Rutherford backscattering study of Ar- and Xe-implanted silicon carbide journal, March 1992

Effect of collision cascade density on radiation damage in SiC journal, May 2009

Ion-beam-produced structural defects in ZnO journal, March 2003

Radiation defect dynamics in Si at room temperature studied by pulsed ion beams journal, October 2015

Handbook of SiC properties for fuel performance modeling journal, September 2007

Some new aspects for the evaluation of disorder profiles in silicon by backscattering journal, January 1973

Energy spike effects in ion-bombarded GaN journal, April 2009

A method for the solution of certain non-linear problems in least squares journal, January 1944

Atomic scale simulation of defect production in irradiated 3C-SiC journal, September 2001

Radiation-induced amorphization and swelling in ceramics journal, March 1991

Low-temperature damage formation in ion-implanted SiC and its correlation with primary energy deposition journal, July 2014

Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties journal, May 2003

Effects of the density of collision cascades: Separating contributions from dynamic annealing and energy spikes journal, August 2009

Effective defect diffusion lengths in Ar-ion bombarded 3 C -SiC journal, April 2016

Effect of the density of collision cascades on ion implantation damage in ZnO journal, October 2007

Pulsed ion beam measurement of defect diffusion lengths in irradiated solids journal, March 2013

Structure and properties of ion-beam-modified (6H) silicon carbide journal, September 1998

Influence of irradiation spectrum and implanted ions on the amorphization of ceramics journal, August 1996

SRIM – The stopping and range of ions in matter (2010) journal, June 2010

Mechanism for the molecular effect in Si bombarded with clusters of light atoms journal, February 2006

Amorphization and recrystallization of covalent tetrahedral networks journal, January 1999

Materials modification with ion beams journal, May 1986

Irradiation effects in α-SiC studied via RBS-C, Raman-scattering and surface profiling journal, September 1996

High density cascade effects journal, January 1981

Effect of the density of collision cascades on implantation damage in GaN journal, April 2001

Temperature and irradiation species dependence of radiation response of nanocrystalline silicon carbide journal, December 2014

Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si journal, August 2012

On the structure of irradiation-induced collision cascades in metals as a function of recoil energy and crystal structure journal, February 1993

Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide journal, August 2016

Time constant of defect relaxation in ion-irradiated 3C-SiC journal, May 2015

Damage buildup in Ar-ion-irradiated 3 C -SiC at elevated temperatures journal, September 2015

Comparative study of radiation defect dynamics in 3C-SiC by X-ray diffraction, Raman scattering, and ion channeling journal, December 2018

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Radiation defect dynamics in GaAs studied by pulsed ion beams journal, July 2018

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Electron-irradiation-induced crystalline-to-amorphous transition in β-SiC single crystals
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The temperature dependence of ion-beam-induced amorphization in β-SiC
journal, December 1995

Nanoscale engineering of radiation tolerant silicon carbide
journal, January 2012

Ionization-induced annealing of pre-existing defects in silicon carbide
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A Rutherford backscattering study of Ar- and Xe-implanted silicon carbide
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Effect of collision cascade density on radiation damage in SiC
journal, May 2009

Ion-beam-produced structural defects in ZnO
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Radiation defect dynamics in Si at room temperature studied by pulsed ion beams
journal, October 2015

Handbook of SiC properties for fuel performance modeling
journal, September 2007

Some new aspects for the evaluation of disorder profiles in silicon by backscattering
journal, January 1973

Energy spike effects in ion-bombarded GaN
journal, April 2009

A method for the solution of certain non-linear problems in least squares
journal, January 1944

Atomic scale simulation of defect production in irradiated 3C-SiC
journal, September 2001

Radiation-induced amorphization and swelling in ceramics
journal, March 1991

Low-temperature damage formation in ion-implanted SiC and its correlation with primary energy deposition
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Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties
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Effects of the density of collision cascades: Separating contributions from dynamic annealing and energy spikes
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Effective defect diffusion lengths in Ar-ion bombarded 3 C -SiC
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Effect of the density of collision cascades on ion implantation damage in ZnO
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Pulsed ion beam measurement of defect diffusion lengths in irradiated solids
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Structure and properties of ion-beam-modified (6H) silicon carbide
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Influence of irradiation spectrum and implanted ions on the amorphization of ceramics
journal, August 1996

SRIM – The stopping and range of ions in matter (2010)
journal, June 2010

Mechanism for the molecular effect in Si bombarded with clusters of light atoms
journal, February 2006

Amorphization and recrystallization of covalent tetrahedral networks
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Materials modification with ion beams
journal, May 1986

Irradiation effects in α-SiC studied via RBS-C, Raman-scattering and surface profiling
journal, September 1996

High density cascade effects
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Effect of the density of collision cascades on implantation damage in GaN
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Temperature and irradiation species dependence of radiation response of nanocrystalline silicon carbide
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Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si
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On the structure of irradiation-induced collision cascades in metals as a function of recoil energy and crystal structure
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Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide
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Time constant of defect relaxation in ion-irradiated 3C-SiC
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Damage buildup in Ar-ion-irradiated 3 C -SiC at elevated temperatures
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Comparative study of radiation defect dynamics in 3C-SiC by X-ray diffraction, Raman scattering, and ion channeling
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