skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: The role of Frenkel defect diffusion in dynamic annealing in ion-irradiated Si

Abstract

The formation of stable radiation damage in crystalline solids often proceeds via complex dynamic annealing processes, involving migration and interaction of ballistically-generated point defects. The dominant dynamic annealing processes, however, remain unknown even for crystalline Si. Here, we use a pulsed ion beam method to study defect dynamics in Si bombarded in the temperature range from -20 to 140 °C with 500 keV Ar ions. Results reveal a defect relaxation time constant of ~10–0.2 ms, which decreases monotonically with increasing temperature. The dynamic annealing rate shows an Arrhenius dependence with two well-defined activation energies of 73 ± 5 meV and 420 ± 10 meV, below and above 60 °C, respectively. Rate theory modeling, bench-marked against this data, suggests a crucial role of both vacancy and interstitial diffusion, with the dynamic annealing rate limited by the migration and interaction of vacancies.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1410028
Report Number(s):
LLNL-JRNL-677440
Journal ID: ISSN 2045-2322
DOE Contract Number:  
AC52-07NA27344
Resource Type:
Journal Article
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 7; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY

Citation Formats

Wallace, J. B., Aji, L. B. Bayu, Martin, A. A., Shin, S. J., Shao, L., and Kucheyev, S. O. The role of Frenkel defect diffusion in dynamic annealing in ion-irradiated Si. United States: N. p., 2017. Web. doi:10.1038/srep39754.
Wallace, J. B., Aji, L. B. Bayu, Martin, A. A., Shin, S. J., Shao, L., & Kucheyev, S. O. The role of Frenkel defect diffusion in dynamic annealing in ion-irradiated Si. United States. doi:10.1038/srep39754.
Wallace, J. B., Aji, L. B. Bayu, Martin, A. A., Shin, S. J., Shao, L., and Kucheyev, S. O. Fri . "The role of Frenkel defect diffusion in dynamic annealing in ion-irradiated Si". United States. doi:10.1038/srep39754. https://www.osti.gov/servlets/purl/1410028.
@article{osti_1410028,
title = {The role of Frenkel defect diffusion in dynamic annealing in ion-irradiated Si},
author = {Wallace, J. B. and Aji, L. B. Bayu and Martin, A. A. and Shin, S. J. and Shao, L. and Kucheyev, S. O.},
abstractNote = {The formation of stable radiation damage in crystalline solids often proceeds via complex dynamic annealing processes, involving migration and interaction of ballistically-generated point defects. The dominant dynamic annealing processes, however, remain unknown even for crystalline Si. Here, we use a pulsed ion beam method to study defect dynamics in Si bombarded in the temperature range from -20 to 140 °C with 500 keV Ar ions. Results reveal a defect relaxation time constant of ~10–0.2 ms, which decreases monotonically with increasing temperature. The dynamic annealing rate shows an Arrhenius dependence with two well-defined activation energies of 73 ± 5 meV and 420 ± 10 meV, below and above 60 °C, respectively. Rate theory modeling, bench-marked against this data, suggests a crucial role of both vacancy and interstitial diffusion, with the dynamic annealing rate limited by the migration and interaction of vacancies.},
doi = {10.1038/srep39754},
journal = {Scientific Reports},
issn = {2045-2322},
number = ,
volume = 7,
place = {United States},
year = {2017},
month = {1}
}

Works referenced in this record:

Generation of point defects in crystalline silicon by MeV heavy ions: Dose rate and temperature dependence
journal, September 1993


Radiation defect dynamics in Si at room temperature studied by pulsed ion beams
journal, October 2015

  • Wallace, J. B.; Charnvanichborikarn, S.; Bayu Aji, L. B.
  • Journal of Applied Physics, Vol. 118, Issue 13
  • DOI: 10.1063/1.4932209

Some new aspects for the evaluation of disorder profiles in silicon by backscattering
journal, January 1973


A method for the solution of certain non-linear problems in least squares
journal, January 1944

  • Levenberg, Kenneth
  • Quarterly of Applied Mathematics, Vol. 2, Issue 2
  • DOI: 10.1090/qam/10666

Crystalline-to-amorphous transition for Si-ion irradiation of Si(100)
journal, October 1991


Intrinsic defects in silicon
journal, August 2000


Formation and migration energies of the vacancy in Si calculated using the HSE06 range-separated hybrid functional
journal, November 2013


Ion beams in silicon processing and characterization
journal, May 1997

  • Chason, E.; Picraux, S. T.; Poate, J. M.
  • Journal of Applied Physics, Vol. 81, Issue 10
  • DOI: 10.1063/1.365193

Monovacancy and Interstitial Migration in Ion-Implanted Silicon
journal, June 2007


SRIM – The stopping and range of ions in matter (2010)
journal, June 2010

  • Ziegler, James F.; Ziegler, M. D.; Biersack, J. P.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 268, Issue 11-12
  • DOI: 10.1016/j.nimb.2010.02.091

Mass effects on regrowth rates and activation energies of solid-phase epitaxy induced by ion beams in silicon
journal, June 1999


Amorphization of silicon by elevated temperature ion irradiation
journal, December 1995

  • Goldberg, R. D.; Williams, J. S.; Elliman, R. G.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 106, Issue 1-4
  • DOI: 10.1016/0168-583X(95)00711-3

High density cascade effects
journal, January 1981


Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si
journal, August 2012


Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide
journal, August 2016

  • Bayu Aji, L. B.; Wallace, J. B.; Shao, L.
  • Scientific Reports, Vol. 6, Issue 1
  • DOI: 10.1038/srep30931

Ion-beam-induced epitaxial regrowth of amorphous layers in silicon on sapphire
journal, October 1984


Time constant of defect relaxation in ion-irradiated 3C-SiC
journal, May 2015

  • Wallace, J. B.; Bayu Aji, L. B.; Shao, L.
  • Applied Physics Letters, Vol. 106, Issue 20
  • DOI: 10.1063/1.4921471