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Title: Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature

Abstract

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that are promising candidates for RF and power applications. Long-channel AlxGa1-xN HEMTs with x = 0.7 in the channel have been built and evaluated across the -50°C to +200°C temperature range. These devices achieved room temperature drain current as high as 46 mA/mm and were absent of gate leakage until the gate diode forward bias turn-on at ~2.8 V, with a modest -2.2 V threshold voltage. A very large Ion/Ioff current ratio, of 8 × 109 was demonstrated. A near ideal subthreshold slope that is just 35% higher than the theoretical limit across the temperature range was characterized. The ohmic contact characteristics were rectifying from -50°C to +50°C and became nearly linear at temperatures above 100°C. An activation energy of 0.55 eV dictates the temperature dependence of off-state leakage.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1]; ORCiD logo [1]
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  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1414439
Report Number(s):
SAND-2017-13486J
Journal ID: ISSN 2162-8769; 659496
Grant/Contract Number:  
AC04-94AL85000; NA0003525
Resource Type:
Accepted Manuscript
Journal Name:
ECS Journal of Solid State Science and Technology
Additional Journal Information:
Journal Volume: 6; Journal Issue: 12; Journal ID: ISSN 2162-8769
Publisher:
Electrochemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; HEMT; high electron mobility transistor; Ultra-wide-bandgap

Citation Formats

Baca, Albert G., Klein, Brianna A., Allerman, Andrew A., Armstrong, Andrew M., Douglas, Erica A., Stephenson, Chad A., Fortune, Torben R., and Kaplar, Robert J. Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature. United States: N. p., 2017. Web. doi:10.1149/2.0231712jss.
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Baca, Albert G., Klein, Brianna A., Allerman, Andrew A., Armstrong, Andrew M., Douglas, Erica A., Stephenson, Chad A., Fortune, Torben R., & Kaplar, Robert J. Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature. United States. https://doi.org/10.1149/2.0231712jss
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Baca, Albert G., Klein, Brianna A., Allerman, Andrew A., Armstrong, Andrew M., Douglas, Erica A., Stephenson, Chad A., Fortune, Torben R., and Kaplar, Robert J. Sat . "Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature". United States. https://doi.org/10.1149/2.0231712jss. https://www.osti.gov/servlets/purl/1414439.
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@article{osti_1414439,
title = {Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature},
author = {Baca, Albert G. and Klein, Brianna A. and Allerman, Andrew A. and Armstrong, Andrew M. and Douglas, Erica A. and Stephenson, Chad A. and Fortune, Torben R. and Kaplar, Robert J.},
abstractNote = {AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that are promising candidates for RF and power applications. Long-channel AlxGa1-xN HEMTs with x = 0.7 in the channel have been built and evaluated across the -50°C to +200°C temperature range. These devices achieved room temperature drain current as high as 46 mA/mm and were absent of gate leakage until the gate diode forward bias turn-on at ~2.8 V, with a modest -2.2 V threshold voltage. A very large Ion/Ioff current ratio, of 8 × 109 was demonstrated. A near ideal subthreshold slope that is just 35% higher than the theoretical limit across the temperature range was characterized. The ohmic contact characteristics were rectifying from -50°C to +50°C and became nearly linear at temperatures above 100°C. An activation energy of 0.55 eV dictates the temperature dependence of off-state leakage.},
doi = {10.1149/2.0231712jss},
journal = {ECS Journal of Solid State Science and Technology},
number = 12,
volume = 6,
place = {United States},
year = {Sat Dec 09 00:00:00 EST 2017},
month = {Sat Dec 09 00:00:00 EST 2017}
}
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https://doi.org/10.1149/2.0231712jss
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    Works referencing / citing this record:

    AlGaN polarization-doped field effect transistor with compositionally graded channel from Al 0.6 Ga 0.4 N to AlN
    journal, February 2019

    • Armstrong, Andrew M.; Klein, Brianna A.; Baca, Albert G.
    • Applied Physics Letters, Vol. 114, Issue 5
    • DOI: 10.1063/1.5058263

    Enhancement-mode Al 0.85 Ga 0.15 N/Al 0.7 Ga 0.3 N high electron mobility transistor with fluorine treatment
    journal, March 2019

    • Klein, Brianna A.; Douglas, Erica A.; Armstrong, Andrew M.
    • Applied Physics Letters, Vol. 114, Issue 11
    • DOI: 10.1063/1.5064543

    Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with a nanodot-based floating gate
    journal, January 2019

    • Armstrong, Andrew M.; Klein, Brianna A.; Allerman, Andrew A.
    • Photonics Research, Vol. 7, Issue 6
    • DOI: 10.1364/prj.7.000b24
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