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Title: An AlN/Al 0.85Ga 0.15N high electron mobility transistor

Abstract

An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al 0.85Ga 0.15N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 V was achieved without a gate insulator or field plate. Excellent gate leakage characteristics enabled a high I on/I off current ratio greater than 10 7 and an excellent subthreshold slope of 75 mV/decade. A large Schottky barrier height of 1.74 eV contributed to these results. In conclusion, the room temperature voltage-dependent 3-terminal off-state drain current was adequately modeled with Frenkel-Poole emission.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1]; ORCiD logo [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1325715
Report Number(s):
SAND-2016-6904J
Journal ID: ISSN 0003-6951; APPLAB; 645875
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 3; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; MODFETs; III-V semiconductors; Schottky barriers; electrical resistivity; leakage currents

Citation Formats

Baca, Albert G., Armstrong, Andrew M., Allerman, Andrew A., Douglas, Erica A., Sanchez, Carlos A., King, Michael P., Coltrin, Michael E., Fortune, Torben R., and Kaplar, Robert J. An AlN/Al0.85Ga0.15N high electron mobility transistor. United States: N. p., 2016. Web. doi:10.1063/1.4959179.
Baca, Albert G., Armstrong, Andrew M., Allerman, Andrew A., Douglas, Erica A., Sanchez, Carlos A., King, Michael P., Coltrin, Michael E., Fortune, Torben R., & Kaplar, Robert J. An AlN/Al0.85Ga0.15N high electron mobility transistor. United States. doi:10.1063/1.4959179.
Baca, Albert G., Armstrong, Andrew M., Allerman, Andrew A., Douglas, Erica A., Sanchez, Carlos A., King, Michael P., Coltrin, Michael E., Fortune, Torben R., and Kaplar, Robert J. Fri . "An AlN/Al0.85Ga0.15N high electron mobility transistor". United States. doi:10.1063/1.4959179. https://www.osti.gov/servlets/purl/1325715.
@article{osti_1325715,
title = {An AlN/Al0.85Ga0.15N high electron mobility transistor},
author = {Baca, Albert G. and Armstrong, Andrew M. and Allerman, Andrew A. and Douglas, Erica A. and Sanchez, Carlos A. and King, Michael P. and Coltrin, Michael E. and Fortune, Torben R. and Kaplar, Robert J.},
abstractNote = {An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al0.85Ga0.15N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 V was achieved without a gate insulator or field plate. Excellent gate leakage characteristics enabled a high Ion/Ioff current ratio greater than 107 and an excellent subthreshold slope of 75 mV/decade. A large Schottky barrier height of 1.74 eV contributed to these results. In conclusion, the room temperature voltage-dependent 3-terminal off-state drain current was adequately modeled with Frenkel-Poole emission.},
doi = {10.1063/1.4959179},
journal = {Applied Physics Letters},
number = 3,
volume = 109,
place = {United States},
year = {2016},
month = {7}
}

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Cited by: 19 works
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Works referenced in this record:

AlGaN/GaN HEMTs-an overview of device operation and applications
journal, June 2002


High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
journal, September 2006

  • Dora, Y.; Chakraborty, A.; Mccarthy, L.
  • IEEE Electron Device Letters, Vol. 27, Issue 9, p. 713-715
  • DOI: 10.1109/LED.2006.881020

High electron mobility transistor based on a GaN‐AlxGa 1−xN heterojunction
journal, August 1993

  • Asif Khan, M.; Bhattarai, A.; Kuznia, J. N.
  • Applied Physics Letters, Vol. 63, Issue 9, p. 1214-1215
  • DOI: 10.1063/1.109775