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Title: An AlN/Al0.85Ga0.15N high electron mobility transistor

Abstract

An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al0.85Ga0.15N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 V was achieved without a gate insulator or field plate. Excellent gate leakage characteristics enabled a high Ion/Ioff current ratio greater than 107 and an excellent subthreshold slope of 75 mV/decade. A large Schottky barrier height of 1.74 eV contributed to these results. In conclusion, the room temperature voltage-dependent 3-terminal off-state drain current was adequately modeled with Frenkel-Poole emission.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1]; ORCiD logo [1]
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  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1325715
Report Number(s):
SAND-2016-6904J
Journal ID: ISSN 0003-6951; APPLAB; 645875
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 3; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; MODFETs; III-V semiconductors; Schottky barriers; electrical resistivity; leakage currents

Citation Formats

Baca, Albert G., Armstrong, Andrew M., Allerman, Andrew A., Douglas, Erica A., Sanchez, Carlos A., King, Michael P., Coltrin, Michael E., Fortune, Torben R., and Kaplar, Robert J. An AlN/Al0.85Ga0.15N high electron mobility transistor. United States: N. p., 2016. Web. doi:10.1063/1.4959179.
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Baca, Albert G., Armstrong, Andrew M., Allerman, Andrew A., Douglas, Erica A., Sanchez, Carlos A., King, Michael P., Coltrin, Michael E., Fortune, Torben R., & Kaplar, Robert J. An AlN/Al0.85Ga0.15N high electron mobility transistor. United States. https://doi.org/10.1063/1.4959179
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Baca, Albert G., Armstrong, Andrew M., Allerman, Andrew A., Douglas, Erica A., Sanchez, Carlos A., King, Michael P., Coltrin, Michael E., Fortune, Torben R., and Kaplar, Robert J. Fri . "An AlN/Al0.85Ga0.15N high electron mobility transistor". United States. https://doi.org/10.1063/1.4959179. https://www.osti.gov/servlets/purl/1325715.
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@article{osti_1325715,
title = {An AlN/Al0.85Ga0.15N high electron mobility transistor},
author = {Baca, Albert G. and Armstrong, Andrew M. and Allerman, Andrew A. and Douglas, Erica A. and Sanchez, Carlos A. and King, Michael P. and Coltrin, Michael E. and Fortune, Torben R. and Kaplar, Robert J.},
abstractNote = {An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al0.85Ga0.15N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 V was achieved without a gate insulator or field plate. Excellent gate leakage characteristics enabled a high Ion/Ioff current ratio greater than 107 and an excellent subthreshold slope of 75 mV/decade. A large Schottky barrier height of 1.74 eV contributed to these results. In conclusion, the room temperature voltage-dependent 3-terminal off-state drain current was adequately modeled with Frenkel-Poole emission.},
doi = {10.1063/1.4959179},
journal = {Applied Physics Letters},
number = 3,
volume = 109,
place = {United States},
year = {Fri Jul 22 00:00:00 EDT 2016},
month = {Fri Jul 22 00:00:00 EDT 2016}
}
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https://doi.org/10.1063/1.4959179
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Works referenced in this record:

AlGaN/GaN HEMTs-an overview of device operation and applications
journal, June 2002

Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors
journal, June 2008

  • Nanjo, Takuma; Takeuchi, Misaichi; Suita, Muneyoshi
  • Applied Physics Letters, Vol. 92, Issue 26
  • DOI: 10.1063/1.2949087

Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling
journal, October 2013

  • Turuvekere, Sreenidhi; Karumuri, Naveen; Rahman, A. Azizur
  • IEEE Transactions on Electron Devices, Vol. 60, Issue 10
  • DOI: 10.1109/TED.2013.2272700

Field-Plated Ga 2 O 3 MOSFETs With a Breakdown Voltage of Over 750 V
journal, February 2016

  • Wong, Man Hoi; Sasaki, Kohei; Kuramata, Akito
  • IEEE Electron Device Letters, Vol. 37, Issue 2
  • DOI: 10.1109/LED.2015.2512279

Temperature dependence of gate–leakage current in AlGaN/GaN high-electron-mobility transistors
journal, May 2003

  • Arulkumaran, S.; Egawa, T.; Ishikawa, H.
  • Applied Physics Letters, Vol. 82, Issue 18
  • DOI: 10.1063/1.1571655

Si3N4/AlGaN/GaN–metal–insulator–semiconductor heterostructure field–effect transistors
journal, October 2001

  • Hu, X.; Koudymov, A.; Simin, G.
  • Applied Physics Letters, Vol. 79, Issue 17
  • DOI: 10.1063/1.1412591

Large Gate Leakage Current in AlGaN/GaN High Electron Mobility Transistors
journal, August 2002

  • Mizuno, Shinya; Ohno, Yutaka; Kishimoto, Shigeru
  • Japanese Journal of Applied Physics, Vol. 41, Issue Part 1, No. 8
  • DOI: 10.1143/JJAP.41.5125

An assessment of wide bandgap semiconductors for power devices
journal, May 2003

  • Hudgins, J. L.; Simin, G. S.; Santi, E.
  • IEEE Transactions on Power Electronics, Vol. 18, Issue 3
  • DOI: 10.1109/TPEL.2003.810840

A Novel Thin Al2O3 Gate Dielectric by ECR-Plasma Oxidation of Al for AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors
journal, January 2003

  • Ootomo, S.; Hashizume, T.; Hasegawa, H.
  • physica status solidi (c), Vol. 0, Issue 1
  • DOI: 10.1002/pssc.200390124

High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
journal, September 2006

  • Dora, Y.; Chakraborty, A.; Mccarthy, L.
  • IEEE Electron Device Letters, Vol. 27, Issue 9, p. 713-715
  • DOI: 10.1109/LED.2006.881020

Low-Resistive Ohmic Contacts for AlGaN Channel High-Electron-Mobility Transistors Using Zr/Al/Mo/Au Metal Stack
journal, October 2011

  • Yafune, Norimasa; Hashimoto, Shin; Akita, Katsushi
  • Japanese Journal of Applied Physics, Vol. 50, Issue 10R
  • DOI: 10.7567/JJAP.50.100202

Analysis of leakage current mechanisms in Schottky contacts to GaN and Al0.25Ga0.75N∕GaN grown by molecular-beam epitaxy
journal, January 2006

  • Zhang, H.; Miller, E. J.; Yu, E. T.
  • Journal of Applied Physics, Vol. 99, Issue 2
  • DOI: 10.1063/1.2159547

High electron mobility transistor based on a GaN‐AlxGa 1−xN heterojunction
journal, August 1993

  • Asif Khan, M.; Bhattarai, A.; Kuznia, J. N.
  • Applied Physics Letters, Vol. 63, Issue 9, p. 1214-1215
  • DOI: 10.1063/1.109775

Current status and scope of gallium nitride-based vertical transistors for high-power electronics application
journal, June 2013

  • Chowdhury, Srabanti; Swenson, Brian L.; Wong, Man Hoi
  • Semiconductor Science and Technology, Vol. 28, Issue 7
  • DOI: 10.1088/0268-1242/28/7/074014

Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy
journal, January 2004

  • Miller, E. J.; Yu, E. T.; Waltereit, P.
  • Applied Physics Letters, Vol. 84, Issue 4
  • DOI: 10.1063/1.1644029

Optimum semiconductors for high-power electronics
journal, January 1989

  • Shenai, K.; Scott, R. S.; Baliga, B. J.
  • IEEE Transactions on Electron Devices, Vol. 36, Issue 9
  • DOI: 10.1109/16.34247

Barrier heights of Schottky contacts on strained AlGaN/GaN heterostructures: Determination and effect of metal work functions
journal, June 2003

  • Lin, Zhaojun; Lu, Wu; Lee, Jaesun
  • Applied Physics Letters, Vol. 82, Issue 24
  • DOI: 10.1063/1.1584077

AlN/AlGaN HEMTs on AlN substrate for stable high-temperature operation
journal, January 2014

  • Yafune, N.; Akita, K.; Hashimoto, S.
  • Electronics Letters, Vol. 50, Issue 3
  • DOI: 10.1049/el.2013.2846

Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs
journal, November 2008

  • Chung, J. W.; Roberts, J. C.; Piner, E. L.
  • IEEE Electron Device Letters, Vol. 29, Issue 11
  • DOI: 10.1109/LED.2008.2005257

AlGaN Channel HEMT With Extremely High Breakdown Voltage
journal, March 2013

  • Nanjo, Takuma; Imai, Akifumi; Suzuki, Yosuke
  • IEEE Transactions on Electron Devices, Vol. 60, Issue 3
  • DOI: 10.1109/TED.2012.2233742

Schottky barrier properties of various metals on n-type GaN
journal, October 1996

Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage
journal, December 2014

  • Bajaj, Sanyam; Hung, Ting-Hsiang; Akyol, Fatih
  • Applied Physics Letters, Vol. 105, Issue 26
  • DOI: 10.1063/1.4905323

GaN-Based RF Power Devices and Amplifiers
journal, February 2008

Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors
journal, November 2000

  • Miller, E. J.; Dang, X. Z.; Yu, E. T.
  • Journal of Applied Physics, Vol. 88, Issue 10
  • DOI: 10.1063/1.1319972

High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate
journal, December 2010

  • Tokuda, Hirokuni; Hatano, Maiko; Yafune, Norimasa
  • Applied Physics Express, Vol. 3, Issue 12
  • DOI: 10.1143/APEX.3.121003

AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor
journal, February 2000

  • Khan, M. A.; Hu, X.; Sumin, G.
  • IEEE Electron Device Letters, Vol. 21, Issue 2
  • DOI: 10.1109/55.821668
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    Works referencing / citing this record:

    Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
    journal, December 2017

    • Tsao, J. Y.; Chowdhury, S.; Hollis, M. A.
    • Advanced Electronic Materials, Vol. 4, Issue 1
    • DOI: 10.1002/aelm.201600501

    Electronic Transport Properties in AlInGaN/AlGaN Heterostructures
    journal, February 2018

    • Li, Yao; Zhang, Jinfeng; Xue, Junshuai
    • physica status solidi (a), Vol. 215, Issue 7
    • DOI: 10.1002/pssa.201700787

    Saturation Velocity Measurement of Al0.7Ga0.3N-Channel High Electron Mobility Transistors
    journal, July 2019

    • Klein, Brianna A.; Baca, Albert G.; Lepkowski, Stephan M.
    • Journal of Electronic Materials, Vol. 48, Issue 9
    • DOI: 10.1007/s11664-019-07421-1

    The role of surface roughness on dislocation bending and stress evolution in low mobility AlGaN films during growth
    journal, April 2018

    • Bardhan, Abheek; Mohan, Nagaboopathy; Chandrasekar, Hareesh
    • Journal of Applied Physics, Vol. 123, Issue 16
    • DOI: 10.1063/1.5005080

    AlGaN polarization-doped field effect transistor with compositionally graded channel from Al 0.6 Ga 0.4 N to AlN
    journal, February 2019

    • Armstrong, Andrew M.; Klein, Brianna A.; Baca, Albert G.
    • Applied Physics Letters, Vol. 114, Issue 5
    • DOI: 10.1063/1.5058263

    Perspective: Ga 2 O 3 for ultra-high power rectifiers and MOSFETS
    journal, December 2018

    • Pearton, S. J.; Ren, Fan; Tadjer, Marko
    • Journal of Applied Physics, Vol. 124, Issue 22
    • DOI: 10.1063/1.5062841

    Enhancement-mode Al 0.85 Ga 0.15 N/Al 0.7 Ga 0.3 N high electron mobility transistor with fluorine treatment
    journal, March 2019

    • Klein, Brianna A.; Douglas, Erica A.; Armstrong, Andrew M.
    • Applied Physics Letters, Vol. 114, Issue 11
    • DOI: 10.1063/1.5064543

    Thermal conductivity of crystalline AlN and the influence of atomic-scale defects
    journal, November 2019

    • Xu, Runjie Lily; Muñoz Rojo, Miguel; Islam, S. M.
    • Journal of Applied Physics, Vol. 126, Issue 18
    • DOI: 10.1063/1.5097172

    Design of compositionally graded contact layers for MOCVD grown high Al-content AlGaN transistors
    journal, July 2019

    • Razzak, Towhidur; Hwang, Seongmo; Coleman, Antwon
    • Applied Physics Letters, Vol. 115, Issue 4
    • DOI: 10.1063/1.5108529

    Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high- k ALD ZrO 2 dielectric
    journal, October 2019

    • Mollah, Shahab; Gaevski, Mikhail; Chandrashekhar, Mvs
    • Semiconductor Science and Technology, Vol. 34, Issue 12
    • DOI: 10.1088/1361-6641/ab4781

    Temperature-Dependent Electrical Characteristics of β-Ga 2 O 3 Diodes with W Schottky Contacts up to 500°C
    journal, December 2018

    • Fares, Chaker; Ren, Fan; Pearton, S. J.
    • ECS Journal of Solid State Science and Technology, Vol. 8, Issue 7
    • DOI: 10.1149/2.0011907jss

    Planar Ohmic Contacts to Al 0.45 Ga 0.55 N/Al 0.3 Ga 0.7 N High Electron Mobility Transistors
    journal, January 2017

    • Klein, B. A.; Baca, A. G.; Armstrong, A. M.
    • ECS Journal of Solid State Science and Technology, Vol. 6, Issue 11
    • DOI: 10.1149/2.0181711jss

    Thermal Simulations of High Current β-Ga 2 O 3 Schottky Rectifiers
    journal, January 2019

    • Sharma, Ribhu; Patrick, Erin; Law, Mark E.
    • ECS Journal of Solid State Science and Technology, Vol. 8, Issue 7
    • DOI: 10.1149/2.0361907jss
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